2D-Scalable SiGe BiCMOS Front-Ends for Phased Array Communication Above 110GHz

This talk presents our efforts in the realization of two-dimensionally-scalable 110–170GHz integrated circuits in Silicon-Germanium Bipolar Complementary Metal-Oxide-Semiconductor (SiGe BiCMOS) technologies for use in flexible high-speed wireless communication systems. The talk focuses on the following aspects: ultra-compact integration of transmitter and receiver circuitry, bidirectional operation, design for scalability, and thermal considerations. We start with a brief introduction of industry-standard 1D-scalable mm-wave front-ends in the D-band for radar and wireless communication. Then, we will outline different design methods used for area reduction of individual circuits and ultimately for the full systems in commercially available SiGe technology.