G-Band Power Amplifiers Using InP HBT Technologies

This talk will discuss recent advances in high-power and high-efficiency power amplifiers for Indium Phosphide (InP) Heterojunction Bipolar Transistors (HBTs) above 200GHz. We will review recently published G-band results comparing different device technologies and frequency bands in the WR5 waveguide band. Design techniques for high-performance and robust amplifier operation will be presented for the future communications and radar systems that could utilize G-band (110–300GHz) spectrum.