High-Speed InP Front-Ends and Hybrid Phased Array Techniques for G- and J-band Future Wireless Systems

As the demand for ultra-high data-rates surpassing 100Gb/s grows, future wireless systems over the next decade will require innovative solutions. Frequency bands above 200GHz are expected to be utilized, offering extremely wide bandwidths and the capacity for the implementation of massive arrays. Given the limited maximum oscillation frequency (fmax) of CMOS transistors, III-V compound semiconductor-based transistors emerge as a promising solution for providing sufficient transmitting power to mitigate the high path loss associated with these new frequency bands. This workshop presents several RF front-end designs implemented with high-speed InP technology and explores hybrid InP/CMOS systems and phased arrays. It highlights both the potential offered by these technologies and the challenges that must be addressed to meet the demands of next-generation communication systems.