InGaAs and GaN HEMT LNAs for Earth Observation and SATCOM

The talk gives an overview of recent advances of the InGaAs mHEMT technologies at Fraunhofer IAF and discusses design aspects for wideband ultra-low-noise amplifiers. The talk discusses specific design tradeoffs for LNAs using the corresponding InGaAs mHEMT technologies. The topic of ultra-low-noise InGaAs mHEMT technologies is extended by a discussion about GaN HEMT LNAs with a high linearity.