Transient Thermal Dynamics in RF Wide Bandgap Semiconductors

Despite increased operating voltage and current density, excessive Joule heating limits WBG devices from reaching theoretically predicted performance. To overcome this challenge, accurate characterization of temperature distribution and thin-film layer thermal properties is necessary. This talk provides an overview of thermal characterization methods for evaluating temperature distribution. Optical techniques like hyperspectral Transient Thermoreflectance Imaging (HTTI) and near-band-gap thermoreflectance imaging are discussed. HTTI enables direct channel temperature measurements without near-band-gap illumination that can alter device physics. Results provide insight into bias dependent heating to predict temperature profiles under different operating conditions to help evaluate degradation mechanisms for reliability and lifetime testing.