Active Devices

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José Luis Gonzalez-Jimenez
CEA-LETI
Hong-Yeh Chang
National Central Univ.
Location
146B
Abstract

This session presents low-phase-noise signal generation from 2GHz to 30GHz using a variety of technologies including CMOS, SiGe, and GaN. Several advanced techniques including subharmonic injection, folded resonator, SIW resonator, dual-core/quad-mode, and post-fabrication selection will be discussed.

Abstract
Tu1D-1: A Ka-Band 256-QAM Ninefold Sub-Harmonically Injection-Locked CMOS I/Q Modulator Using Pulsed Oscillator
Liang-Yu Chen, Po-Yuan Chen, Hong-Yeh Chang
National Central Univ., National Central Univ., National Central Univ.
(08:00 - 08:20)
Abstract
Tu1D-2: A Ka-Band High Power and Low Phase Noise GaN MMIC Oscillator with a Compact Open-Loop Folded Resonator Filter
Ying-Chi Chang, Jiayou Wang, Yin-Cheng Chang, Chuan-Chung Chen, Da-Chiang Chang, Yi Huang, Shawn S.H. Hsu
National Tsing Hua Univ., National Tsing Hua Univ., NARLabs-TSRI, National Tsing Hua Univ., NARLabs-TSRI, University of Liverpool, National Tsing Hua Univ.
(08:20 - 08:40)
Abstract
Tu1D-3: An Ultra-Low Phase Noise Substrate-Integrated-Waveguide Oscillator
Menghan Sun, Di Lu, Jiajun Cai, Ming Yu
SUSTech, SUSTech, SUSTech, SUSTech
(08:40 - 09:00)
Abstract
Tu1D-4: 19-GHz VCO with Phase Noise of -117dBc/Hz at 1-MHz Offset Using an Array of Near Minimum Size Transistors and Intelligent Post Fabrication Selection
Farzaneh Jalalibidgoli, Yiorgos Makris, Kenneth K. O
Univ. of Texas at Dallas, Univ. of Texas at Dallas, Univ. of Texas at Dallas
(09:00 - 09:20)
Abstract
Tu1D-5: A 2.9-to-7.2GHz Dual-Core Quad-Mode VCO Achieving 206.5dBc/Hz FoMT in 55nm CMOS
Ya Zhao, Chenglong Liang, Chao Fan, Zhongming Xue, Xingguo Dong, Zixun Gao, Youze Xin, Bingjun Tang, Li Geng
XJTU, XJTU, XJTU, XJTU, XJTU, XJTU, XJTU, XJTU, XJTU
(09:20 - 09:40)

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Stephen Maas
Nonlinear Technologies
Chinchun Meng
NYCU
Location
146B
Abstract

This session presents advanced frequency conversion circuits using silicon-based and III-V semiconductor technologies. The wide range of topics including frequency multiplication, frequency mixing, and frequency division will be discussed.

Abstract
Tu2D-1: A W-Band Stacked Frequency Quadrupler With A Dual Driven Core Achieving 10.3% Drain Efficiency
Yaw Mensah, Sunil Rao, Jeffrey Teng, John Cressler
Georgia Tech, Georgia Tech, Georgia Tech, Georgia Tech
(10:10 - 10:30)
Abstract
Tu2D-2: A F-Band ×4 Frequency Multiplier Chip with High Spectral Purity Using Vertically Stacked Marchand Baluns and TF-MSL
Rainer Weber, Sandrine Wagner, Arnulf Leuther, Axel Tessmann
Fraunhofer IAF, Fraunhofer IAF, Fraunhofer IAF, Fraunhofer IAF
(10:30 - 10:50)
Abstract
Tu2D-3: A 43–84GHz, Wideband Frequency Doubler With a Symmetric, AC-Terminated Transformer Balun
Wonsub Lim, Arya Moradinia, Sanghoon Lee, Jeffrey W. Teng, Christopher T. Coen, Nelson E. Lourenco, John D. Cressler
Georgia Tech, Georgia Tech, Georgia Tech, Georgia Tech, Georgia Tech, Georgia Tech, Georgia Tech
(10:50 - 11:00)
Abstract
Tu2D-4: Strong Fundamental Rejection in Frequency Doublers at 220–260GHz Using a 250-nm InP HBT Process
Jeff Shih-Chieh Chien, Eythan Lam, Jonathan Tao, James F. Buckwalter
Univ. of California, Santa Barbara, Univ. of California, Santa Barbara, Univ. of California, Santa Barbara, Univ. of California, Santa Barbara
(11:00 - 11:10)
Abstract
Tu2D-5: A Wideband Bi-directional Active Mixer for 5G Millimeter-Wave Applications
Pei-Wen Wu, Jia-Wei Ye, Zi-Hao Fu, Yu-Teng Chang, Kun-You Lin
National Taiwan Univ., National Taiwan Univ., National Taiwan Univ., Yuan Ze Univ., National Taiwan Univ.
(11:10 - 11:30)
Abstract
Tu2D-6: A Low Power 185 GHz Static CML Frequency Divider in SiGe HBTs Using Band-switching Technique in 45nm PDSOI BiCMOS
Hao-Yu Chien, Christopher Chen, Runzhou Chen, Jason Woo, Sudhakar Pamarti, Mau-Chung Frank Chang, Chih-Kong Ken Yang
Univ. of California, Los Angeles, Univ. of California, Los Angeles, Univ. of California, Los Angeles, Univ. of California, Los Angeles, Univ. of California, Los Angeles, Univ. of California, Los Angeles, Univ. of California, Los Angeles
(11:30 - 11:50)

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Jesse Moody
Sandia National Laboratories
Luciano Boglione
U.S. Naval Research Laboratory
Location
146C
Abstract

Microwave radiometry and low-noise amplifiers from microwave to mm-waves. Broad range of state-of-the-art LNAs including IR-UWB applications to W-band GaN high linearity uses.

Abstract
Tu4E-1: KEYNOTE: Radiometry and the Ever Shrinking Spectra and Ever Expanding Needs
Sidharth Misra
Jet Propulsion Lab
(15:40 - 16:00)
Abstract
Tu4E-2: A Power-Efficient, F-Band, 6.5-dB NF, Staggered-Tuned, Inverter-Based CMOS LNA for 6G Receivers
Youssef O. Hassan, Mohammad Oveisi, Huan Wang, Payam Heydari
Univ. of California, Irvine, Univ. of California, Irvine, Univ. of California, Irvine, Univ. of California, Irvine
(16:00 - 16:20)
Abstract
Tu4E-3: W-Band Low-Noise-Amplifier MMICs in InGaAs HEMT Technologies on Gallium-Arsenide and Silicon Substrates
Felix Heinz, Arnulf Leuther, Fabian Thome
Fraunhofer IAF, Fraunhofer IAF, Fraunhofer IAF
(16:20 - 16:40)
Abstract
Tu4E-4: A Ku-Band +2 dBm IIP3 Transformer-Based LNA with Loop-Gain-Enhanced Capacitive Negative Feedback
Teng-Shen Yang, Po-Yao Hsu, Liang-Hung Lu
National Taiwan Univ., National Taiwan Univ., National Taiwan Univ.
(16:40 - 17:00)
Abstract
Tu4E-5: A 6.8–9.4GHz LNA Achieving 36.5dB Peak Gain, Consuming 4.28mW with an Adjustable Threshold Limiter for IR-UWB Applications
Stefan Lepkowski, Travis Forbes, Jesse Moody
Sandia National Labs, Sandia National Labs, Sandia National Labs
(17:00 - 17:20)

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Vittorio Camarchia
Politecnico di Torino
Varish Diddi
Qualcomm
Location
146A
Abstract

This session presents high-efficiency and -linearity power amplifiers modules/MMIC designed in GaN and GaAs compound semiconductors. The papers of the session focus on a wide range of applications moving from communications in NR FR1 up to Ka-band satellite. The topology selected is multistage Doherty architecture and differential topology to achieve high efficiency and linearity over wide bands.

Abstract
We1C-1: KEYNOTE: GaAs & GaN MMIC Power Amplifier and Front-End Module Design for K-Ka Band Commercial Communication Systems
Michael Roberg
mmTron
(08:00 - 08:20)
Abstract
We1C-2: High-gain and high-linearity MMIC GaN Doherty Power Amplifier with 3-GHz bandwidth for Ka-band satellite communications
Anna Piacibello, Roberto Quaglia, Rocco Giofrè, Ricardo Figueiredo, Paolo Colantonio, Nuno Carvalho, Vaclav Valenta, Vittorio Camarchia
Politecnico di Torino, Cardiff University, Università di Roma “Tor Vergata”, Universidade de Aveiro, Università di Roma “Tor Vergata”, Universidade de Aveiro, European Space Agency, Politecnico di Torino
(08:20 - 08:40)
Abstract
We1C-3: A High Efficiency and High Linearity GaAs HBT Doherty Power Amplifier for 5G NR 3.4V Application
Shihai He, Jingxian Liang, Linjian Xu, Hao Meng, Yongxue Qian
OnMicro, OnMicro, OnMicro, OnMicro, OnMicro
(08:40 - 09:00)
Abstract
We1C-4: A Highly Linear and Efficient Differential Power Amplifier with 35-dBm Saturated Output Power, 65% Peak PAE by Reducing Base Voltage Peaking in InGaP/GaAs HBT Process for Handset Applications
Sooji Bae, Jooyoung Jeon, Sungwoon Hwang, Byeongcheol Yoon, Junghyun Kim
Hanyang Univ., Gangneung-Wonju National University, Hanyang Univ., Hanyang Univ., Hanyang Univ.
(09:00 - 09:20)
Abstract
We1C-5: Integrated 5-W GaN Doherty Power Amplifier for 5G FR1 Bands with 19dB Gain Over a 41% Bandwidth
Giulia Bartolotti, Anna Piacibello, Vittorio Camarchia
Politecnico di Torino, Politecnico di Torino, Politecnico di Torino
(09:20 - 09:40)
Damla Dimlioglu
Cornell Univ.
Mohammad Ghadiri-Sadrabadi
Kyocera
Location
151AB
Abstract

State-of-the-art Ku-band to E-band mm-wave VGAs and phase shifters in CMOS technology. Design methods include novel approaches in optimization and circuit techniques.

Abstract
We1H-1: A 22-to-37.8 GHz Low-Gain-Phase-Error Variable-Gain Amplifier With Impedance-Compensation Technique in 65-nm CMOS Process
Yiming Yu, Mengqian Geng, Sirui Peng, Junfeng Li, Chenxi Zhao, Huihua Liu, Yunqiu Wu, Kai Kang
UESTC, UESTC, UESTC, UESTC, UESTC, UESTC, UESTC, UESTC
(08:00 - 08:20)
Abstract
We1H-2: Design of Ku-Band Bi-Directional Active Phase Shifter Enabling a Low RMS Error Utilizing Switch-Less Staggered Core with the Identical In-Out Matching
Uichan Park, Suk Hwangbo, Jinhyun Kim, Taeyeong Yoon, Jungsuek Oh
Seoul National Univ., Seoul National Univ., Seoul National Univ., Seoul National Univ., Seoul National Univ.
(08:20 - 08:40)
Abstract
We1H-3: A 57–71-GHz Accurate dB-Linear Variable Gain Power Amplifier with Ultralow Gain Error Using Particle Swarm Optimization Algorithm
Xuwei Li, Depeng Cheng, Xuhao Jiang, Dongming Wang, Lianming Li
Southeast Univ., Purple Mountain Laboratories, Southeast Univ., Southeast Univ., Southeast Univ.
(08:40 - 09:00)
Abstract
We1H-4: A 29–48GHz Variable Gain Low Noise Amplifier Using Active Load in 90-nm CMOS Process
Chih-Hsueh Lai, Yunshan Wang, Yuen-Sum Ng, Chau-Ching Chiong, Huei Wang
National Taiwan Univ., National Taiwan Univ., National Taiwan Univ., Academia Sinica, National Taiwan Univ.
(09:00 - 09:20)

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Wing Shing Chan
CityU
Anna Piacibello
Politecnico di Torino
Location
146A
Abstract

This session includes novel techniques to improve the performance of different power amplifier topologies in the 1GHz – 15GHz frequency band. Techniques for both narrow band and broadband will be presented. It will also cover both single- and dual-input power amplifiers for transmitter architectures.

Abstract
We2C-1: A GaN-Based MMIC Doherty Power Amplifier With Class F Peaking Branch
Francesco Manni, Rocco Giofrè, Vittorio Camarchia, Anna Piacibello, Franco Giannini, Paolo Colantonio
Università di Roma “Tor Vergata”, Università di Roma “Tor Vergata”, Politecnico di Torino, Politecnico di Torino, Università di Roma “Tor Vergata”, Università di Roma “Tor Vergata”
(10:10 - 10:30)
Abstract
We2C-2: Compact Dual-Core Drive Stage using Three-winding Transformer for CMOS Broadband Power Amplifier
Joon-Hyung Kim, Jeong-Taek Son, Jae-Hyeok Song, Jae-Eun Lee, Min-Seok Baek, Jeong-Taek Lim, Han-Woong Choi, Seong-Mo Moon, Dongpil Chang, Choul-Young Kim
Chungnam National University, Chungnam National University, Chungnam National University, Chungnam National University, Chungnam National University, Chungnam National University, Samsung, ETRI, ETRI, Chungnam National University
(10:30 - 10:50)
Abstract
We2C-3: A 1.2 to 5.7GHz Multi-Mode Dual-Input Power Amplifier Using a Novel Sigmoid-Function-Based Power Splitter
Takuma Torii, Ao Yamashita, Yuji Komatsuzaki, Shintaro Shinjo
Mitsubishi Electric, Mitsubishi Electric, Mitsubishi Electric, Mitsubishi Electric
(10:50 - 11:10)
Abstract
We2C-4: High-Power BAW-Based FDD Front-End using Indirect-Duplexing Load Modulated Balanced Amplifier for Massive MIMO Array
Yuchen Cao, Shakthi Priya Gowri, Niteesh Bharadwaj Vangipurapu, Kenle Chen
Qorvo, Univ. of Central Florida, Univ. of Central Florida, Univ. of Central Florida
(11:10 - 11:30)
José Carlos Pedro
Universidade de Aveiro
Paul J. Draxler
MaXentric Technologies
Location
151AB
Abstract

This session reports on recent advances in RF power amplifier linearity and efficiency enhancement techniques.

Abstract
We2H-1: KEYNOTE: Unlocking the Next Generation of Cellular Connectivity: Advances in RF PA and Transmitter Architectures
Rui Ma
pSemi
(10:10 - 10:30)
Abstract
We2H-2: A Baseband Impedance Cancellation Technique For WidebandMulti-Transistor Amplifiers
Indy van den Heuvel, Steve Cripps, Roberto Quaglia, Paul Tasker, Mark Omisakin-Edwards, Ehsan Azad
Cardiff University, Cardiff University, Cardiff University, Cardiff University, Compound Semiconductor Applications Catapult, Compound Semiconductor Applications Catapult
(10:30 - 10:50)
Abstract
We2H-3: A Robust Search Algorithm of Optimal Driving Signals for Dual-Input High Power Amplifiers
Filipe M. Barradas, Luís C. Nunes, José C. Pedro, Christophe Erdmann
Universidade de Aveiro, Universidade de Aveiro, Universidade de Aveiro, AMD
(10:50 - 11:10)
Abstract
We2H-4: A Tri-Branch Analog Pre-Distortion Linearizer for the Compensation of Gain Inflection in Doherty Power Amplifiers
Alex Pitt, Mark A. Beach, Tommaso Cappello
Univ. of Bristol, Univ. of Bristol, Univ. of Bristol
(11:10 - 11:30)
Abstract
We2H-5: A Method for Designing a Linear, Efficient 2-Stage GaN PA for Supply Modulation
Morten Olavsbråten, Anders I. Hagen
NTNU, NTNU
(11:30 - 11:50)

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Yulong Zhao
Skyworks
Chenyu Liang
Qorvo
Location
146A
Abstract

This session presents >10W load-modulated power amplifiers focusing on broad bandwidth and wide output backoff power ranges. The session begins with a keynote presentation on stability analysis, critical for any high-power design. Examples of both hybrid and MMIC power amplifiers will be discussed.

Abstract
We3C-1: KEYNOTE: Stability Analysis Methods for Microwave Power Amplifiers: A Modern Perspective
Thomas A. Winslow
Macom
(13:30 - 13:50)
Abstract
We3C-2: Design and Characterization of an MMIC Current Mode Outphasing Power Amplifier
Aleksander Bogusz, Wantao Li, Jonathan Lees, Roberto Quaglia, Gabriel Montoro, Pere L. Gilabert, Steve Cripps
Cardiff University, UPC, Cardiff University, Cardiff University, UPC, UPC, Cardiff University
(13:50 - 14:10)
Abstract
We3C-3: Decade-Bandwidth RF-Input Pseudo-Doherty Load Modulated Balanced Amplifier using Signal-Flow-Based Phase Alignment Design
Pingzhu Gong, Jiachen Guo, Niteesh Bharadwaj Vangipurapu, Kenle Chen
Univ. of Central Florida, Univ. of Central Florida, Univ. of Central Florida, Univ. of Central Florida
(14:10 - 14:30)
Abstract
We3C-4: Mode Extension of Load-Modulated Balanced Amplifier with Enhanced Efficiency
Jieen Xie, Kwok-Keung Michael Cheng, Pengyu Yu, Xiaohu Fang
CUHK, CUHK, CUHK, SUSTech
(14:30 - 14:50)
Abstract
We3C-5: A 3.2–4.2GHz Wideband 47dBm GaN HEMT Sequential-LMBA with Harmonic Tuned Using CRLH Transmission Line Stub
Hirotaka Asami, Takashi Sumiyoshi, Hiroshi Yamamoto, Takashi Maehata
Sumitomo Electric Industries, Sumitomo Electric Industries, Sumitomo Electric Industries, Sumitomo Electric Industries
(14:50 - 15:10)
Anding Zhu
Univ. College Dublin
Pere L. Gilabert
Univ. Politècnica de Catalunya
Location
151AB
Abstract

This session addresses digital signal processing algorithms for wireless transmitter linearization and power amplifier behavioral modeling.

Abstract
We3H-1: KEYNOTE: Role of AI/ML in PA Linearization for Next G Wireless
Kevin Chuang
Analog Devices
(13:30 - 13:50)
Abstract
We3H-2: Adaptive Kernel Function Sharing for Digital Predistortion of RF Power Amplifiers With Dynamic Resource Block Allocation
Hang Yin, Anding Zhu
Univ. College Dublin, Univ. College Dublin
(13:50 - 14:10)
Abstract
We3H-3: A Low-Complexity DPD Coefficient Update Method for Varying Transmission Configurations
Tianyang Zhong, Jun Peng, Songbai He, Yuchen Bian, Xinyu Wang, Yijie Tang, Bo Pang
UESTC, UESTC, UESTC, UESTC, UESTC, UESTC, UESTC
(14:10 - 14:30)
Abstract
We3H-4: Behavioral Modeling of Millimeter Wave GaN Power Amplifiers for 6G Integrated Sensing and Communications Application
Yucheng Yu, Luqi Yu, Peng Chen, Chao Yu, Qian Wu
Southeast Univ., Southeast Univ., Southeast Univ., Southeast Univ., Univ. College Dublin
(14:30 - 14:50)
Abstract
We3H-5: On the Parameter Identification of Cascaded Behavioral Models for Wideband Digital Predistortion Linearization
Raúl Criado, Wantao Li, William Thompson, Gabriel Montoro, Kevin Chuang, Pere L. Gilabert
UPC, UPC, Analog Devices, UPC, Analog Devices, UPC
(14:50 - 15:10)

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Michael Roberg
mmTron
Munkyo Seo
Sungkyunkwan Univ.
Location
146A
Abstract

This session focuses on mm-wave power amplifiers operating between Ka-band and E-band. The first paper describes a GaN V/E-band distributed PA with greater than 1W output power. The second paper discusses a V-band GaN PA with low-gain compression for use in communication systems. The third paper presents a Ka-band LNA and PA designed in silicon FinFET technology. The fourth paper describes a high linearity SiGe PA design using a novel balun and power combiner.

Abstract
Th1C-1: A 52-to-86GHz V-/E-band GaN Distributed combined Power Amplifier with Output Power Beyond 1W and 34GHz Bandwidth
Bharath kumar Cimbili, Mingquan Bao, Christian Friesicke, Sandrine Wagner, Ruediger Quay
Ericsson, Ericsson, Fraunhofer Institute for Applied Solid State Physics, Fraunhofer Institute for Applied Solid State Physics, Fraunhofer Institute for Applied Solid State Physics
(08:00 - 08:20)
Abstract
Th1C-2: V-Band GaN Power Amplifier MMICs with High Power-Bandwidth and Low Gain Compression for RF Inter-Satellite Links
Christian Friesicke, Friedbert van Raay, Sebastian Krause, Bharath Cimbili, Peter Brückner, Rüdiger Quay, Alberto Colzani, Antonio Traversa, Alessandro Fonte
Fraunhofer IAF, Fraunhofer IAF, Fraunhofer IAF, Fraunhofer IAF, Fraunhofer IAF, Fraunhofer IAF, SIAE MICROELETTRONICA, SIAE MICROELETTRONICA, SIAE MICROELETTRONICA
(08:20 - 08:40)
Abstract
Th1C-3: Compact K/Ka-Band Frontend PA and LNA in 16nm FinFET for Next Generation Digitally Intensive Arrays
Edward Liu, Boce Lin, Cho-Ying Lu, Hua Wang
ETH Zürich, ETH Zürich, TSMC, ETH Zürich
(08:40 - 09:00)
Abstract
Th1C-4: A 31–41GHz SiGe Power Amplifier with Sandwiched-Coupler-Balun and Folded-T-Line Power Combiner Achieving 23.5-dBm/22.2-dBm Psat/OP1dB and Supporting 64-QAM Modulation
Kenan Xie, Rundi Wu, Keping Wang
Tianjin Univ., Tianjin Univ., Tianjin Univ.
(09:00 - 09:20)
Shahed Reza
Sandia National Laboratories
Ko-Tao Lee
Qorvo
Location
152AB
Abstract

This session features discussions of advances in process technology for III-V on Si HBTs, low-loss SOI substrate processing, and GaN-on-Silicon power devices.

Abstract
Th1I-1: KEYNOTE: Ultra-Wide Bandgap MMW/Sub-MMW Devices
Tom Oder
DEVCOM ARL Army Research Office
(08:00 - 08:20)
Abstract
Th1I-2: An Adaptable In(Ga)P/Ga(Sb)As/Ga(In)As HBT Technology on 300mm Si for RF Applications
Annie Kumar, Sachin Yadav, Abhitosh Vais, Guillaume Boccardi, Yves Mols, Reynald Alcotte, Bertrand Parvais, Bernardette Kunert, Nadine Collaert
IMEC, IMEC, IMEC, IMEC, IMEC, IMEC, IMEC, IMEC, IMEC
(08:20 - 08:40)
Abstract
Th1I-3: Local Interface RF Passivation Layer Based on Helium Ion-Implantation in High-Resistivity Silicon Substrates
M. Perrosé, P. Acosta Alba, S. Reboh, J. Lugo, C. Plantier, P. Cardinael, Martin Rack, F. Allibert, F. Milesi, X. Garros, Jean-Pierre Raskin
CEA-LETI, CEA-LETI, CEA-LETI, CEA-LETI, CEA-LETI, UCLouvain, UCLouvain, Soitec, CEA-LETI, CEA-LETI, UCLouvain
(08:40 - 09:00)
Abstract
Th1I-4: Large-Signal Characterisation and Analysis of AlN/GaN MISHEMTs on Si with a PAE > 62% at 28GHz
Rana ElKashlan, Sachin Yadav, Ahmad Khaled, Dongping Xiao, Babak Kazemi, Hao Yu, AliReza Alian, Uthayasankaran Peralagu, Nadine Collaert, Bertrand Parvais
IMEC, IMEC, IMEC, IMEC, IMEC, IMEC, IMEC, IMEC, IMEC, IMEC
(09:00 - 09:20)

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Frederick H. Raab
Green Mountain Radio Research
Marc Franco
Macom
Location
145AB
Abstract

This session starts with a keynote presentation on an HF through UHF transceiver overview before moving to a presentation on a reconfigurable low-pass filter. The session continues with a high isolation CMOS switch, a GaN supply modulator and finishes with a keynote presentation on analog predistortion applied to the HF through UHF frequency range.

Abstract
Th2B-1: KEYNOTE: A Modern HF/VHF/UHF Transceiver for All Applications — What Would it Look Like Today?
Ulrich L. Rohde
Universität der Bundeswehr München
(10:10 - 10:30)
Abstract
Th2B-2: A 0.1–3.2GHz Reconfigurable LPF With Peaking Reducing and Selectivity Enhancement Using Adaptive Impedance Transformation
Xu Cheng, Yunbo Rao, Xianhu Luo, Liang Zhang, Jiangan Han, Rui Wu, Haibo Tang, Xingdong Liang, Xianjin Deng, Hao Gao
CAEP, CAEP, CAEP, CAEP, CAEP, CAS, CAS, CAS, CAEP, Technische Universiteit Eindhoven
(10:30 - 10:50)
Abstract
Th2B-3: High Isolation CMOS TDD RF Front-End Using Sandwich-Type Concentric Vortical Transformer and Leakage Elimination Technique
Shih-Hsuan Tsai, Shou-Jen Yang, Zhen-Ting Zhao, Hao-Shun Yang
Taipei Tech, Taipei Tech, Taipei Tech, Taipei Tech
(10:50 - 11:10)
Abstract
Th2B-4: A Monolithic GaN based Supply Modulator with Dual-Antibootstrap Level Shifter for Envelope Tracking Application
Chenhao Li, Qingyang Dong, Xin Jiang, Xinyu Liu, Ke Wei, Weijun Luo
Institute of Microelectronics, Institute of Microelectronics, Institute of Microelectronics, Institute of Microelectronics, Institute of Microelectronics, Institute of Microelectronics
(11:10 - 11:30)
Abstract
Th2B-5: KEYNOTE: Understanding Linearization and its Recent Developments
Allen Katz
TCNJ
(11:30 - 11:50)
David Brown
BAE Systems
Sensen Li
Univ. of Texas at Austin
Location
146A
Abstract

This session focuses on III-V and silicon power amplifiers (PAs) targeting D-band applications and beyond. It will start with a benchmark design of high-efficiency PAs in 250nm and 130nm InP HBT technologies at 220GHz, followed by a low-noise PA for the WR4.3 and WR3.4 bands in a 35nm InGaAs mHEMT technology. The next presentation from the session will talk about another InGaAs mHEMT PA covering 270–320GHz in a compact footprint. Next, analysis and design of a differential complex neutralization will be discussed, based on which a PA at D-band is implemented for efficient and linear applications. The session will be concluded with a presentation on a 10–230GHz InP distributed amplifier using Darlington quadruple-stacked HBTs.

Abstract
Th2C-1: 220-GHz High-Efficiency Power Amplifiers in 250-nm and 130-nm InP HBT Technologies Having 14.4–25.0% PAE and 40–60mW Pout
Zach Griffith, Miguel Urteaga, Petra Rowell
Teledyne Scientific & Imaging, Teledyne Scientific & Imaging, Teledyne Scientific & Imaging
(10:10 - 10:30)
Abstract
Th2C-2: Low-Noise Power-Amplifier MMICs for the WR4.3 and WR3.4 Bands in a 35-nm Gate-Length InGaAs mHEMT Technology
Fabian Thome, Arnulf Leuther
Fraunhofer IAF, Fraunhofer IAF
(10:30 - 10:50)
Abstract
Th2C-3: Highly-Compact 20-mW, 270–320-GHz InGaAs mHEMT Power Amplifier MMIC
Laurenz John, Axel Tessmann, Sandrine Wagner, Arnulf Leuther
Fraunhofer IAF, Fraunhofer IAF, Fraunhofer IAF, Fraunhofer IAF
(10:50 - 11:10)
Abstract
Th2C-4: Analysis and Design of Differential Complex Neutralization Power Amplifiers for Efficient-Yet-Linear High mm-Wave Applications
Mohamed Eleraky, Tzu-Yuan Huang, Yuqi Liu, Hua Wang
ETH Zürich, Georgia Tech, ETH Zürich, ETH Zürich
(11:10 - 11:30)
Abstract
Th2C-5: A 10-230-GHz InP Distributed Amplifier Using Darlington Quadruple-Stacked HBTs
Phat Nguyen, Natalie Wagner, Alexander Stameroff, Anh-Vu Pham
Univ. of California, Davis, Keysight Technologies, Keysight Technologies, Univ. of California, Davis
(11:30 - 11:50)
Wolfram Stiebler
Raytheon
Peter Magnee
NXP Semiconductors
Location
152AB
Abstract

This session includes papers featuring heterogeneous integration of N-polar GaN HEMTs with Si interposers at Ka-band, high-power-density Ka-band GaN MIS-HEMTs, and thermal characterization and modeling of coupling effects in GaN-based MMICs.

Abstract
Th2I-1: KEYNOTE: Overview of RF Power Amplifier Technology for Wireless Infrastructure and Future Trends
Fred van Rijs
Ampleon
(10:10 - 10:30)
Abstract
Th2I-2: A Heterogeneously-Integrated Ka-Band, N-Polar Gallium Nitride HEMT Amplifier
Justin J. Kim, Michael D. Hodge, Mark R. Soler, Florian Herrault, Daniel S. Green, James F. Buckwalter
PseudolithIC, PseudolithIC, PseudolithIC, PseudolithIC, PseudolithIC, PseudolithIC
(10:30 - 10:50)
Abstract
Th2I-3: Ka Band GaN MIS-HEMT with ALD-SiN Gate Dielectric and Lp-SiN Passivation Layer
Ke Wei, Yichuan Zhang, Sheng Zhang, Xiaoqiang He, Jiaqi Guo, Kaiyu Wang, RuiZhe Zhang, Xinhua Wang, Sen Huang, Haibo Ying, Yankui Li, Weijun Luo, Jiebin Niu, Xinyu Liu
CAS, CAS, CAS, CAS, CAS, CAS, CAS, CAS, CAS, CAS, CAS, CAS, CAS, CAS
(10:50 - 11:10)
Abstract
Th2I-4: Characterization and Modeling of Dynamic Thermal Coupling in GaN MMIC Power Amplifiers
Tobias Kristensen, Torbjörn M.J. Nilsson, Andreas Divinyi, Johan Bremer, Mattias Thorsell
Chalmers Univ. of Technology, Saab, Saab, Chalmers Univ. of Technology, Chalmers Univ. of Technology
(11:10 - 11:30)