IMS Industry Showcase
Monday, 16 June 2025
15:10 – 17:00
Esplanade Ballroom Foyer, Moscone Center
Join us before the IMS Plenary Session for the Industry Showcase where selected IMS paper authors will present their work.
Paper Title | Speaker |
Th2F: 2300-GHz-Band InP HBT Power Amplifier Module Enabling 280-Gbps 0-dBm Signal Generation with Digital Predistortion | Teruo Jyo, NTT Corporation |
We3C-1: A Highly Linear 4W Differential SOI-CMOS RF Switch | Ting-Li Hsu, Tech. Univ. of Munich |
We2E-5: High-Power Handling, Amplitude and Phase stable, Full Band WR-06 Rotary Joint Based on TE01 Mode | Alex H Chen, Eravant |
Th1B-2: A Low-Loss, Wideband, 0-110 GHz SPDT Using PCM RF Switches with Integrated CMOS Drivers | Nabil El-Hinnawy, Tower Semiconductor |
We2H-2: A High-Efficiency GaAs HBT Power Amplifier for 6G FR3 Applications | Jung-Tao Chung, National Taiwan Univ. |
Tu2D-2: An Integrated Doherty Power Amplifier Module Based on an Advanced GaN-on-Si HEMT Technology and a Wideband Power Combiner | Ioannis Peppas, Graz Univ. of Technology |
Tu3E-1: Experimental Demonstration of E-Band Tunable Analog Predistortion | Dhecha Nopchinda, Gotmic AB |
Th1G-2: DC-to-89-GHz AMUX-based IQ Modulator in 250-nm InP HBT Technology for Multiplexing-DAC Subsystem | Munehiko Nagatani, NTT Corporation |
Tu3B-1: 150GHz-Band Compact Phased-Array AiP Module for XR Applications toward 6G | Yohei Morishita, Panasonic Industry Co., Ltd. |
Tu2E-4: Recurrent Neural Network Modeling of Radio Frequency Amplifiers for System-Level Simulation and Design | Alan Preciado-Grijalva, Epirus, Inc. |
Tu1E-2: Modeling Josephson traveling-wave parametric amplifiers with electromagnetic and circuit cosimulation | Likai Yang, Keysight Technologies |
Th1D-5: A Novel Q-Choked Sapphire Sandwiched Resonator for Wide-Band Measurements of Flat Dielectric Samples | Malgorzata Celuch, QWED Sp. zoo. |