IMS2025 Industry Showcase

IMS Industry Showcase

Monday, 16 June 2025 

15:10 – 17:00 

Esplanade Ballroom Foyer, Moscone Center 

Join us before the IMS Plenary Session for the Industry Showcase where selected IMS paper authors will present their work. 

Paper Title Speaker
Th2F: 2300-GHz-Band InP HBT Power Amplifier Module Enabling 280-Gbps 0-dBm Signal Generation with Digital Predistortion  Teruo Jyo, NTT Corporation
We3C-1: A Highly Linear 4W Differential SOI-CMOS RF Switch Ting-Li Hsu, Tech. Univ. of Munich
We2E-5: High-Power Handling, Amplitude and Phase stable, Full Band WR-06 Rotary Joint Based on TE01 Mode Alex H Chen, Eravant
Th1B-2: A Low-Loss, Wideband, 0-110 GHz SPDT Using PCM RF Switches with Integrated CMOS Drivers Nabil El-Hinnawy, Tower Semiconductor
We2H-2: A High-Efficiency GaAs HBT Power Amplifier for 6G FR3 Applications   Jung-Tao Chung, National Taiwan Univ.
Tu2D-2: An Integrated Doherty Power Amplifier Module Based on an Advanced GaN-on-Si HEMT Technology and a Wideband Power Combiner   Ioannis Peppas, Graz Univ. of Technology
Tu3E-1: Experimental Demonstration of E-Band Tunable Analog Predistortion Dhecha Nopchinda, Gotmic AB 
Th1G-2: DC-to-89-GHz AMUX-based IQ Modulator in 250-nm InP HBT Technology for Multiplexing-DAC Subsystem Munehiko Nagatani, NTT Corporation 
Tu3B-1: 150GHz-Band Compact Phased-Array AiP Module for XR Applications toward 6G Yohei Morishita, Panasonic Industry Co., Ltd. 
Tu2E-4: Recurrent Neural Network Modeling of Radio Frequency Amplifiers for System-Level Simulation and Design Alan Preciado-Grijalva, Epirus, Inc. 
 Tu1E-2: Modeling Josephson traveling-wave parametric amplifiers with electromagnetic and circuit cosimulation Likai Yang, Keysight Technologies
Th1D-5: A Novel Q-Choked Sapphire Sandwiched Resonator for Wide-Band Measurements of Flat Dielectric Samples Malgorzata Celuch, QWED Sp. zoo.