Congratulations to this year's IMS2025 Industry Paper Competition Finalists!
We2H-2 | A High-Efficiency GaAs HBT Power Amplifier for 6G FR3 Applications
Jung-Tao Chung, Keng-Li Hsu, Chang Cheng Te, Kai-Chen Feng, Kun-You Lin, Chao-Hsin Wu, National Taiwan Univ.; Jyun-Hao Li, Shao-Yu Tu, Tung-Yao Chou, Shu-Hsiao Tsai, Cheng-Kuo Lin, WIN Semiconductors Corp.
Th1B-2 | A Low-Loss, Wideband, 0-110 GHz SPDT Using PCM RF Switches with Integrated CMOS Drivers
Jeff Dykstra, Peregrine Semiconductor Corp.; Nabil El, Hinnawy, Tower Semiconductor; Greg Slovin, Tower Semiconductor
Th2D-4 | Cross-spectrum Phase Noise Measurements of $10^{, 15}$, Level Stability Photonic Microwave Oscillators
Michele Giunta, Benjamin Rauf, Sebastian Pucher, Simon Afrem, Menlo Systems GmbH; Wolfgang W. Wendler, Alexander Roth, Jonas Kornprobst, Rohde & Schwarz GmbH & Co KG; Stefan Peschl, Jonas Schulz, Jan Schorer, HENSOLDT Sensors GmbH; Marc Fischer, Ronald Holzwarth, Menlo Systems GmbH
Tu3E-1 | Experimental Demonstration of E-Band Tunable Analog Predistortion Dhecha Nopchinda, Gotmic AB; Herbert Zirath, Chalmers Univ. of Technology; Marcus Gavell, Gotmic AB
Th2A-3 | High Performance Waveguide Launcher in Interposer Package Technology for 77/79 GHz Automotive 4D Imaging Radar
Rasoul Ebrahimzadeh, Taieb Elkarkraoui, Mohammad Marvasti, MMSENSE Technologies Inc.; Abdellatif Zanati, Jonas Harm, NXP Semiconductors, Hamburg, Germany; Mohammad- Reza Nezhad-Ahmadi, MMSENSE Technologies Inc.
We3C-1 | A Highly Linear 4W Differential SOI-CMOS RF Switch
Valentyn Solomko, Infineon Technologies AG; Ting-Li Hsu, Tech. Univ. of Munich; Semen Syroiezhin, Yiwen Zhang, Infineon Technologies AG; Amelie Hagelauer, Tech. Univ. of Munich
Tu3B-1 | 150 GHz-band Compact Phased-Array AiP Module for XR Applications Toward 6G Yohei Morishita, Panasonic Industry Co., Ltd.; Ken Takahashi, Panasonic System Networks R&D Lab. Co., Ltd.; Ryosuke Hasaba, Panasonic Industry Co., Ltd.; Akihiro Egami, Tomoki Abe, Masatoshi Suzuki, Tomohiro Murata, Yoichi Nakagawa, Koji Takinami, Panasonic Industry Co., Ltd.; Yudai Yamazaki, Institute of Science Tokyo; Sunghwan Park, Institute of Science Tokyo
Tu3D-4 | 300-GHz-Band Single-Balanced Resistive Mixer Module in 60-nm InP HEMT Technology with LO Leakage Suppressing Function
Teruo Jyo, NTT Corporation; Hiroshi Hamada, NTT Device Technology Laboratories; Takuya Tsutsumi, Daisuke Kitayama, NTT Corporation; Ibrahim Abdo, NTT Device Technology Laboratories; Munehiko Nagatani, NTT Corporation; Hiroyuki Takahashi, Nippon Telegraph and Telephone Corp.
Tu1E-2 | Modeling Josephson Traveling-wave Parametric Amplifiers with Electromagnetic and Circuit Co-simulation
Likai Yang, Keysight Technologies; Jennifer Wang, Massachusetts Institute of Technology; Mohamed Hassan, Philip Krantz, Keysight Technologies; Kevin P. O’Brien, Massachusetts Institute of Technology
We2E-5 | High-Power Handling, Amplitude and Phase Stable, Full Band WR-06 Rotary Joint Based on TE01 Mode
Alex H Chen, Yonghui Shu, Eravant
Th1G-2 | DC-to-89-GHz AMUX-based IQ Modulator in 250-nm InP HBT Technology for Multiplexing-DAC Subsystem
Munehiko Nagatani, Hitoshi Wakita, Teruo Jyo, Yuta Shiratori, Miwa Mutoh, Akira Kawai, Masanori Nakamura, Fukutaro Hamaoka, Hiroshi Yamazaki, Takayuki Kobayashi, Yutaka Miyamoto, NTT Corporation; Hiroyuki Takahashi, Nippon Telegraph and Telephone Corp.
Tu2E-4 | Recurrent Neural Network Modeling of Radio Frequency Amplifiers for System- Level Simulation and Design
Joshua Corsello,Alan Preciado Grijalva, Sergey Shaboyan, Kevin Wray, Lavanya Rau, Daniel Kultran, Epirus, Inc.
Tu2D, 2 | An Integrated Doherty Power Amplifier Module Based on an Advanced GaN- on-Si HEMT Technology and a Wideband Power Combiner
Mustazar Iqbal, Infineon Technologies; Ioannis Peppas, Graz Univ. of Technology; Marco Pitton, Peter Singerl, Infineon Technologies Austria AG
Th1D, 5 | A Novel Q-Choked Sapphire Sandwiched Resonator for Wide-Band Measurements of Flat Dielectric Samples
Wojciech Gwarek, Malgorzata Celuch, Lukasz Nowicki, QWED Sp. z o.o