Finwave Semiconductor
Finwave Semiconductor is advancing communications with next-generation GaN on Silicon technology for RF Front-Ends.
The company’s high-performance GaN technology is the invention of prominent MIT and Finwave researchers focused on bringing revolutionary RF device architecture and semiconductor process technology to 5G and 6G mobile infrastructure as well as smartphones, artificial intelligence and cloud computing. Finwave’s GaN innovation delivers remarkable improvement in linearity and power efficiency for 5G / 6G communications. With numerous GaN technology patents, Finwave is shaping the future through a new breakthrough transistor and process technology designed to optimize the potential of GaN for higher frequency and higher power operation.
Finwave’s GaN on Silicon E-Mode 5 V Ultra Linear Planar and FinFET technologies, are the result of deep tech semiconductor research.
Finwave operates from offices in Massachusetts and California, with partners located across the world.
The company’s high-performance GaN technology is the invention of prominent MIT and Finwave researchers focused on bringing revolutionary RF device architecture and semiconductor process technology to 5G and 6G mobile infrastructure as well as smartphones, artificial intelligence and cloud computing. Finwave’s GaN innovation delivers remarkable improvement in linearity and power efficiency for 5G / 6G communications. With numerous GaN technology patents, Finwave is shaping the future through a new breakthrough transistor and process technology designed to optimize the potential of GaN for higher frequency and higher power operation.
Finwave’s GaN on Silicon E-Mode 5 V Ultra Linear Planar and FinFET technologies, are the result of deep tech semiconductor research.
Finwave operates from offices in Massachusetts and California, with partners located across the world.
Booth:
12076