Active Devices

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Jose Luis Gonzalez-Jimenez
CEA-LETI
Hong-Yeh Chang
National Central Univ.
Location
146B
Abstract

This session presents low-phase noise signal generation from 2 GHz to 30 GHz using a variety of technologies including CMOS, SiGe, and GaN. Several advanced techniques including subharmonic injection, folded resonator, SIW resonator, dual core/quad mode, and post-fabrication selection will be discussed.

Abstract
Tu1D-1: A Ka-band 256-QAM Ninefold Sub-Harmonically Injection-Locked CMOS I/Q Modulator Using Pulsed Oscillator
Liang-Yu Chen, Po-Yuan Chen, Hong-Yeh Chang
National Central Univ., National Central Univ., National Central Univ.
(08:00 - 08:20)
Abstract
Tu1D-2: A Ka-Band High Power and Low Phase Noise GaN MMIC Oscillator with a Compact Open-Loop Folded Resonator Filter
Ying-Chi Chang, Jiayou Wang, Yin-Cheng Chang, Chuan-Jung Chen, Da-Chaing Chang, Yi Huang, Shawn S. H. Hsu
National Tsing Hua Univ., National Tsing Hua Univ., Taiwan Semiconductor Research Institute, National Tsing Hua University, Hsinchu, Taiwan, Taiwan Semiconductor Research Institute, University of Liverpool, the UK, National Tsing Hua Univ.
(08:20 - 08:40)
Abstract
Tu1D-3: An Ultra-low Phase Noise Substrate-Integrated-Waveguide Oscillator
Menghan Sun, DI LU, Jiajun Cai, Ming Yu
Southern Univ. of Science and Technology, Southern Univ. of Science and Technology, Southern Univ. of Science and Technology, Southern Univ. of Science and Technology
(08:40 - 09:00)
Abstract
Tu1D-4: 19-GHz VCO with Phase Noise of -117 dBc/Hz at 1-MHz Offset Using an Array of Near Minimum Size Transistors and Intelligent Post Fabrication Selection
Farzaneh Jalalibidgoli, Yiorgos Makris, Kenneth K.O
Univ. of Texas at Dallas, The University of Texas at Dallas, The University of Texas at Dallas
(09:00 - 09:20)
Abstract
Tu1D-5: A 2.9-to-7.2 GHz Dual-Core Quad-Mode VCO Achieving 206.5 dBc/Hz FoMT in 55nm CMOS
Ya Zhao, Chenglong Liang, chao fan, Zhongming xue, Xingguo Dong, Zixun Gao, Youze Xin, Bingjun Tang, Li Geng
Xi'an Jiaotong Univ., Xi'an Jiaotong Univ., Xi'an Jiaotong Univ., Xi'an Jiaotong Univ., Xi'an Jiaotong Univ., Xi'an Jiaotong Univ., Xi'an Jiaotong Univ., Xi'an Jiaotong Univ., Xi'an Jiaotong Univ.
(09:20 - 09:40)

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Steve Maas
Nonlinear Technologies
Chinchun Meng
National Yang Ming Chiao Tung Univ.
Location
146B
Abstract

This session presents advanced frequency conversion circuits using silicon-based and III-V semiconductor technologies. The wide range of topics including frequency multiplication, frequency mixing, and frequency division will be discussed.

Abstract
Tu2D-1: A W-Band Stacked Frequency Quadrupler With A Dual Driven Core Achieving 10.3% Drain Efficiency
Yaw Mensah, Sunil Rao, Jeffrey Teng, John Cressler
Georgia Institute of Technology, Georgia Institute of Technology, Georgia Institute of Technology, Georgia Institute of Technology
(10:10 - 10:30)
Abstract
Tu2D-2: A F-Band X4 Frequency Multiplier Chip with High Spectral Purity using Vertically Stacked Marchand Baluns and TF-MSL
Rainer Weber, Sandrine Wagner, Arnulf Leuther, Axel Tessmann
Fraunhofer Institute for Applied Solid State Physics, Fraunhofer Institute for Applied Solid State Physics, Fraunhofer Institute for Applied Solid State Physics, Fraunhofer Institute for Applied Solid State Physics
(10:30 - 10:50)
Abstract
Tu2D-3: A 43–84 GHz, Wideband Frequency Doubler With a Symmetric, AC-Terminated Transformer Balun
Wonsub Lim, Arya Moradinia, Sanghoon Lee, Jeffrey Teng, Christopher Coen, Nelson E. Lourenco, John D. Cressler
Georgia Institute of Technology, Georgia Institute of Technology, Georgia Institute of Technology, Georgia Institute of Technology, Georgia Tech Research Institute, Georgia Tech Research Institute, Georgia Tech Research Institute
(10:50 - 11:00)
Abstract
Tu2D-4: Strong Fundamental Rejection in Frequency Doublers at 220-260 GHz Using a 250-nm InP HBT Process
Jeff Shih-Chieh Chien, Eythan Lam, Jonathan Tao, James Buckwalter
Univ. of California, Santa Barbara, Univ. of California, Santa Barbara, Univ. of California, Santa Barbara, Univ. of California, Santa Barbara
(11:00 - 11:10)
Abstract
Tu2D-5: A Wideband Bi-directional Active Mixer for 5G Millimeter-Wave Applications
Pei-Wen Wu, Jia-Wei Ye, Zi-Hao Fu, Yu-Teng Chang, Kun-You Lin
National Taiwan Univ., National Taiwan Univ., National Taiwan Univ., Yuan Ze Univ., National Taiwan Univ.
(11:10 - 11:30)
Abstract
Tu2D-6: A Low Power 185 GHz Static CML Frequency Divider in SiGe HBTs Using Band-switching Technique in 45nm PDSOI BiCMOS
Hao-Yu Chien, Christopher Chen, Runzhou Chen, Jason Woo, Sudhakar Pamarti, Mau-Chung Frank Chang, Chih-Kong Ken Yang
Univ. of California, Los Angeles, Univ. of California, Los Angeles, Univ. of California, Los Angeles, Univ. of California, Los Angeles, Univ. of California, Los Angeles, Univ. of California, Los Angeles, Univ. of California, Los Angeles
(11:30 - 11:50)

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Jesse Moody
Sandia National Laboratories
Luciano Boglione
Naval Research Laboratory
Location
146C
Abstract

Microwave Radiometry and Low Noise Amplifiers from microwave to millimeterwaves. Broad range of state-of-the-art LNAs including IR-UWB applications to W-band GaN high linearity uses.

Tu4E-1: KEYNOTE: Radiometry and the Ever Shrinking Spectra and Ever Expanding Needs
Sid Misra
NASA’s Jet Propulsion Lab
(15:40 - 16:00)
Abstract
Tu4E-2: A Power-Efficient, F-Band, 6.5-dB NF, Staggered-Tuned, Inverter-Based CMOS LNA for 6G Receivers
Youssef Hassan, Mohammad Oveisi, Huan Wang, Payam Heydari
Univ. of California, Irvine, Univ. of California, Irvine, Univ. of California, Irvine, Univ. of California, Irvine
(16:00 - 16:20)
Abstract
Tu4E-3: W-Band Low-Noise-Amplifier MMICs in InGaAs HEMT Technologies on Gallium-Arsenide and Silicon Substrates
Felix Heinz, Arnulf Leuther, Fabian Thome
Fraunhofer Institute for Applied Solid State Physics, Fraunhofer Institute for Applied Solid State Physics, Fraunhofer Institute for Applied Solid State Physics
(16:20 - 16:40)
Abstract
Tu4E-4: A Ku-Band +2 dBm IIP3 Transformer-Based LNA with Loop-Gain-Enhanced Capacitive Negative Feedback
Teng-Shen Yang, Po-Yao Hsu, Liang-Hung Lu
National Taiwan Univ., National Taiwan Univ., National Taiwan Univ.
(16:40 - 17:00)
Abstract
Tu4E-5: A 6.8 - 9.4 GHz LNA Achieving 36.5 dB Peak Gain, Consuming 4.28 mW with an Adjustable Threshold Limiter for IR-UWB Applications
Stefan Lepkowski, Travis Forbes, Jesse Moody
Sandia National Laboratories, Sandia National Laboratories, Sandia National Laboratories
(17:00 - 17:20)

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Vittorio Camarchia
Politecnico di Torino
VARISH DIDDI
Qualcomm Technologies, Inc.
Location
146A
Abstract

This session presents high efficiency and linearity power amplifiers modules/MMIC designed in GaN and GaAs compound semiconductors. The papers of the session focus on a wide range of applications moving from communications in NR FR1 up to Ka-band satellite.

The topology selected are multistage Doherty architecture and differential topology to achieve high efficiency and linearity over wide bands.

We1C-1: KEYNOTE: MMIC Power Amplifier & Front End Module Design for Ku-Ka band Commercial Communication Systems
Michael Roberg
mmTron, Inc.
(08:00 - 08:20)
Abstract
We1C-2: High-gain and high-linearity MMIC GaN Doherty Power Amplifier with 3-GHz bandwidth for Ka-band satellite communications
Anna Piacibello, Roberto Quaglia, Rocco Giofrè, Ricardo Figueiredo, Paolo Colantonio, Nuno Carvalho, Vaclav Valenta, Vittorio Camarchia
Politecnico di Torino, Cardiff University, Univ. of Rome Tor Vergata, Univ. of Aveiro, Univ. of Rome Tor Vergata, Instituto De Telecomunicacoes, European Space Agency, Politecnico di Torino
(08:20 - 08:40)
Abstract
We1C-3: A High Efficiency and High Linearity GaAs HBT Doherty Power Amplifier for 5G NR 3.4V Application
Shihai He, Jingxian Liang, Linjian Xu, Hao Meng, Yongxue Qian
Beijing Onmicro Electronics Co.,Ltd. China, Beijing Onmicro Electronics Co.,Ltd. China, Beijing Onmicro Electronics Co.,Ltd. China, Beijing Onmicro Electronics Co.,Ltd. China, Beijing Onmicro Electronics Co.,Ltd. China
(08:40 - 09:00)
Abstract
We1C-4: A Highly Linear and Efficient Differential Power Amplifier with 35-dBm Saturated Output Power, 65% Peak PAE by Reducing Base Voltage Peaking in InGaP/GaAs HBT Process for Handset applications
Sooji Bae, Jooyoung Jeon, Sungwoon Hwang, Byeongcheol Yoon, Junghyun Kim
Hanyang Univ., Gangneung-Wonju National University, Hanyang Univ., Hanyang Univ., Hanyang Univ.
(09:00 - 09:20)
Abstract
We1C-5: Integrated 5-W GaN Doherty Power Amplifier for 5G FR1 bands with 19 dB Gain over a 41% Bandwidth
Giulia Bartolotti, Anna Piacibello, Vittorio Camarchia
Politecnico di Torino, Politecnico di Torino, Politecnico di Torino
(09:20 - 09:40)
Damla Dimlioglu
Cornell Univ.
Mohammad Sadrabadi
Kyocera America, Inc.
Location
151AB
Abstract

State-of-the-art Ku-band to E-band millimeter wave VGAs and phase shifters in CMOS technology. Design methods include novel approaches in optimization and circuit techniques.

Abstract
We1H-1: A 22-to-37.8 GHz Low-Gain-Phase-Error Variable-Gain Amplifier With Impedance-Compensation Technique in 65-nm CMOS Process
Yiming Yu, Mengqian Geng, Sirui Peng, Junfeng Li, Chenxi Zhao, Huihua Liu, Yunqiu Wu, Kai Kang
Univ. of Electronic Science and Technology of China, Univ. of Electronic Science and Technology of China, Univ. of Electronic Science and Technology of China, Univ. of Electronic Science and Technology of China, Univ. of Electronic Science and Technology of China, Univ. of Electronic Science and Technology of China, Univ. of Electronic Science and Technology of China, Univ. of Electronic Science and Technology of China
(08:00 - 08:20)
Abstract
We1H-2: Design of Ku-Band Bi-directional Active Phase Shifter Enabling a Low RMS Error Utilizing Switch-less Staggered Core with the Identical In-out Matching
Uichan Park, Suk Hwangbo, Jinhyun Kim, Taeyeong Yoon, Jungsuek Oh
Seoul National Univ., Seoul National Univ., Seoul National Univ., Seoul National Univ., Seoul National Univ.
(08:20 - 08:40)
Abstract
We1H-3: A 57–71-GHz Accurate dB-Linear Variable Gain Power Amplifier with Ultralow Gain Error Using Particle Swarm Optimization Algorithm
Xuwei Li, Depeng Cheng, Xuhao Jiang, Yuchen Liang, Dongming Wang, Lianming Li
Southeast Univ., Purple Mountain Laboratories, Southeast Univ., Southeast Univ., Southeast Univ., Southeast Univ.
(08:40 - 09:00)
Abstract
We1H-4: A 29-48 GHz Variable Gain Low Noise Amplifier Using Active Load in 90-nm CMOS Process
Chih-Hsueh Lai, Yunshan Wang, Yuen-Sum Ng, Chau-Ching Chiong, Huei Wang
National Taiwan Univ., National Taiwan Univ., National Taiwan Univ., Academia Sinica, National Taiwan Univ.
(09:00 - 09:20)

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Wing Shing Chan
City Univ. of Hong Kong
Anna Piacibello
Politecnico di Torino
Location
146A
Abstract

This session includes novel techniques to improve the performance of different power amplifier topologies in the 1GHz - 15GHz frequency band. Techniques for both narrow band and broadband will be presented. It will also cover both single and dual input power amplifies for transmitter architectures.

Abstract
We2C-1: A GaN-Based MMIC Doherty Power Amplifier With Class F Peaking Branch
Francesco Manni, Rocco Giofrè, Vittorio Camarchia, Anna Piacibello, Franco Giannini, Paolo Colantonio
Univ. of Rome Tor Vergata, Univ. of Rome Tor Vergata, Politecnico di Torino, Politecnico di Torino, Univ. of Rome Tor Vergata, Univ. of Rome Tor Vergata
(10:10 - 10:30)
Abstract
We2C-2: Compact Dual-Core Drive Stage using Three-winding Transformer for CMOS Broadband Power Amplifier
Joon-Hyung Kim, Jeong-Taek Son, Jae-Hyeok Song, Jae-Eun Lee, Min-Seok Baek, Jeong-Taek Lim, Han-Woong Choi, Seong-Mo Moon, Dongpil Chang, Choul-Young Kim
Chungnam National Univ., Chungnam National Univ., Chungnam National Univ., Chungnam National Univ., Chungnam National Univ., Chungnam National Univ., Samsung Electronics Co., Ltd., Electronics and Telecommunications Research Institute, Electronics and Telecommunications Research Institute, Chungnam National Univ.
(10:30 - 10:50)
Abstract
We2C-3: A 1.2 to 5.7GHz Multi-Mode Dual-Input Power Amplifier using a Novel Sigmoid-Function-Based Power Splitter
Takuma Torii, Ao Yamashita, Yuji Komatsuzaki, Shintaro Shinjo
Mitsubishi Electric Corp., Mitsubishi Electric Corp., Mitsubishi Electric Corp., Mitsubishi Electric Corp.
(10:50 - 11:10)
Abstract
We2C-4: High-Power BAW-Based FDD Front-End using Indirect-Duplexing Load Modulated Balanced Amplifier for Massive MIMO Array
Yuchen Cao, Shakthi Priya Gowri, Niteesh Bharadwaj Vangipurapu, Kenle Chen
QORVO, Inc., Univ. of Central Florida, Univ. of Central Florida, Univ. of Central Florida
(11:10 - 11:30)
José Carlos Pedro
Instituto De Telecomunicacoes
Paul Draxler
MaXentric Technologies, LLC
Location
151AB
Abstract

This session reports on recent advancements of RF power amplifier linearity and efficiency enhancements techniques.

We2H-1: KEYNOTE: 5G Industry Insights: Innovations in PA and Transmitter Architectures with a Vision for 6G/FR-3 Band Evolution
Rui Ma
pSemi
(10:10 - 10:30)
Abstract
We2H-2: A Baseband Impedance Cancellation Technique For WidebandMulti-Transistor Amplifiers
Indy van den Heuvel, Steve Cripps, Roberto Quaglia, Paul Tasker, Mark Omisakin-Edwards, Ehsan Azad
Cardiff University, Cardiff University, Cardiff University, Cardiff University, Compound Semiconductor Applications (CSA) Catapult, Compound Semiconductor Applications (CSA) Catapult
(10:30 - 10:50)
Abstract
We2H-3: A Robust Search Algorithm of Optimal Driving Signals for Dual-Input High Power Amplifiers
Filipe Barradas, Luis Nunes, Jose Pedro, Christophe Erdmann
Instituto De Telecomunicacoes, Instituto De Telecomunicacoes, Instituto De Telecomunicacoes, AMD Ireland
(10:50 - 11:10)
Abstract
We2H-4: A Tri-Branch Analog Pre-Distortion Linearizer for the Compensation of Gain Inflection in Doherty Power Amplifiers
Alex Pitt, Mark Beach, Tommaso Cappello
Univ. of Bristol, Univ. of Bristol, Villanova Univ.
(11:10 - 11:30)
Abstract
We2H-5: A Method for Designing a Linear, Efficient 2-Stage GaN PA for Supply Modulation
Morten Olavsbråten, Anders Hagen
NTNU Norway, Norwegian Univ. of Science and Technology
(11:30 - 11:50)

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Yulong Zhao
Skyworks Solutions, Inc.
Chenyu Liang
QORVO, Inc.
Location
146A
Abstract

This session presents >10W load-modulated power amplifiers focusing on broad bandwidth and wide output back-off power ranges. The session begins with a keynote presentation on stability analysis, critical for any high-power design. Examples of both hybrid and MMIC power amplifiers will be discussed.

We3C-1: KEYNOTE: Stability Analysis Methods for Microwave Power Amplifiers:  A Modern Perspective
Thomas Winslow
Macom
(13:30 - 13:50)
Abstract
We3C-2: Design and Characterization of an MMIC Current Mode Outphasing Power Amplifier
Aleksander Bogusz, Wantao Li, Jonathan Lees, Roberto Quaglia, Gabriel Montoro, Pere L. Gilabert, Steve Cripps
Cardiff University, Univ. Politècnica de Catalunya, Cardiff University, Cardiff University, Univ. Politècnica de Catalunya, Univ. Politècnica de Catalunya, Cardiff University
(13:50 - 14:10)
Abstract
We3C-3: Decade-Bandwidth RF-Input Pseudo-Doherty Load Modulated Balanced Amplifier using Signal-Flow-Based Phase Alignment Design
Pingzhu Gong, Jiachen Guo, Niteesh Bharadwaj Vangipurapu, Kenle Chen
Univ. of Central Florida, Univ. of Central Florida, Univ. of Central Florida, Univ. of Central Florida
(14:10 - 14:30)
Abstract
We3C-4: Mode Extension of Load-Modulated Balanced Amplifier with Enhanced Efficiency
Jieen Xie, Kwok-Keung Michael Cheng, Pengyu Yu, Xiaohu Fang
Chinese Univ. of Hong Kong, Chinese Univ. of Hong Kong, Chinese Univ. of Hong Kong, Southern Univ. of Science and Technology
(14:30 - 14:50)
Abstract
We3C-5: A 3.2–4.2 GHz Wideband 47 dBm GaN HEMT Sequential-LMBA with Harmonic Tuned Using CRLH Transmission Line Stub
Hirotaka Asami, Takashi Sumiyoshi, Hiroshi Yamamoto, Takashi Maehata
Sumitomo Electric Industries, Ltd., Sumitomo Electric Industries, Ltd., Sumitomo Electric Industries, Ltd., Sumitomo Electric Industries, Ltd.
(14:50 - 15:10)
Anding Zhu
Univ. College Dublin
Pere L. Gilabert
Univ. Politècnica de Catalunya
Location
151AB
Abstract

This session addresses digital signal processing algorithms for wireless transmitter linearization and power amplifier behavioral modeling.

We3H-1: KEYNOTE: Role of AI/ML in Linearization for Next G Wireless
Kevin Chuang
Analog Devices, Inc.
(13:30 - 13:50)
Abstract
We3H-2: Adaptive Kernel Function Sharing for Digital Predistortion of RF Power Amplifiers With Dynamic Resource Block Allocation
Hang Yin, Anding Zhu
Univ. College Dublin, Univ. College Dublin
(13:50 - 14:10)
Abstract
We3H-3: A Low-complexity DPD Coefficient Update Method for Varying Transmission Configurations
Tianyang Zhong, Jun Peng, Songbai He, Yuchen Bian, Xinyu Wang, Yijie Tang, Bo Pang
Univ. of Electronic Science and Technology of China, Univ. of Electronic Science and Technology of China, National Research Univ. of Electronic Technology, Univ. of Electronic Science and Technology of China, Univ. of Electronic Science and Technology of China, Univ. of Electronic Science and Technology of China, Univ. of Electronic Science and Technology of China
(14:10 - 14:30)
Abstract
We3H-4: Behavioral Modeling of Millimeter Wave GaN Power Amplifiers for 6G Integrated Sensing and Communications Application
Yucheng Yu, Luqi Yu, Peng Chen, Chao Yu
Southeast Univ., Southeast Univ., Southeast Univ., Southeast Univ.
(14:30 - 14:50)
Abstract
We3H-5: On the Parameter Identification of Cascaded Behavioral Models for Wideband Digital Predistortion Linearization
Raúl Criado, Wantao Li, William Thompson, Gabriel Montoro, Kevin Chuang, Pere L. Gilabert
Univ. Politècnica de Catalunya, Univ. Politècnica de Catalunya, Analog Devices, Inc., Univ. Politècnica de Catalunya, Analog Devices, Inc., Univ. Politècnica de Catalunya
(14:50 - 15:10)

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Michael Roberg
mmTron, Inc.
Munkyo Seo
Sungkyunkwan Univ.
Location
146A
Abstract

This session focuses on mm-Wave power amplifiers operating between Ka-band and E-band. The first paper describes a GaN V/E-band distributed PA with greater than 1W output power. The second paper discusses a V-band GaN PA with low gain compression for use in communication systems. The third paper presents a Ka-band LNA and PA designed in silicon FinFET technology. The fourth paper describes a high linearity SiGe PA design using a novel balun and power combiner.

Abstract
Th1C-1: A 52-to-86GHz V-/E-band GaN Distributed combined Power Amplifier with Output Power Beyond 1W and 34GHz Bandwidth
Bharath kumar Cimbili, Mingquan Bao, Christian Friesicke, Sandrine Wagner, Ruediger Quay
Ericsson, Ericsson, Fraunhofer Institute for Applied Solid State Physics, Fraunhofer Institute for Applied Solid State Physics, Fraunhofer Institute for Applied Solid State Physics
(08:00 - 08:20)
Abstract
Th1C-2: V-Band GaN Power Amplifier MMICs with High Power-Bandwidth and Low Gain Compression for RF Inter-Satellite Links
Christian Friesicke, Friedbert van Raay, Sebastian Krause, Bharath Cimbili, Peter Brückner, Ruediger Quay, Alberto Colzani, Antonio Traversa, Alessandro Fonte
Fraunhofer Institute for Applied Solid State Physics, Fraunhofer Institute for Applied Solid State Physics, Fraunhofer Institute for Applied Solid State Physics, Fraunhofer Institute for Applied Solid State Physics, Fraunhofer Institute for Applied Solid State Physics, Fraunhofer Institute for Applied Solid State Physics, SIAE Microelettronica, SIAE Microelettronica, SIAE Microelettronica
(08:20 - 08:40)
Abstract
Th1C-3: Compact K/Ka-Band Frontend PA and >> LNA in 16nm FinFET for Next Generation Digitally Intensive Arrays?
Edward Liu, Boce Lin, Cho-Ying Lu, Hua Wang
ETH Zurich, ETH Zurich, Taiwan Semiconductor Manufacturing Co., Ltd., ETH Zurich
(08:40 - 09:00)
Abstract
Th1C-4: A 31-41-GHz SiGe Power Amplifier with Sandwiched-Coupler-Balun and Folded-T-Line Power Combiner Achieving 23.5-dBm/22.2-dBm Psat/OP1dB and Supporting 64-QAM Modulation
Kenan Xie, Rundi Wu, Keping Wang
Tianjin Univ., Tianjin Univ., Tianjin Univ.
(09:00 - 09:20)
Shahed Reza
Sandia National Laboratories
Ko-Tao Lee
QORVO, Inc.
Location
152AB
Abstract

This session features discussions of advances in process technology for III-V on Si HBTs, low-loss SOI substrate processing, and GaN-on-Silicon power devices.

Th1I-1: KEYNOTE: Ultra-wide bandgap devices for RF-mm-wave applications
Joe Qiu
Army Research Office
(08:00 - 08:20)
Abstract
Th1I-2: An adaptable In(Ga)P/Ga(Sb)As/Ga(In)As HBT technology on 300 mm Si for RF applications
Annie Kumar, Sachin Yadav, Abhitosh Vais, Guillaume Boccardi, Yves Mols, Reynald Alcotte, Bertrand Parvais, Bernardette Kunert, Nadine Collaert
IMEC, IMEC, IMEC, IMEC, IMEC, IMEC, IMEC, IMEC, IMEC
(08:20 - 08:40)
Abstract
Th1I-3: Local Interface RF Passivation Layer Based on Helium Ion-Implantation in High-Resistivity Silicon Substrates
Martin Perrosé, Pablo acosta alba, Shay Reboh, Jose Lugo, Christophe Plantier, Pieter Cardinael, Martin Rack, Frederic Allibert, Frederic Milesi, Xavier Garros, Jean-Pierre Raskin
CEA-LETI, Univ. Grenoble Alpes - CEA, LETI, CEA-LETI, CEA-LETI, CEA-LETI, Université Catholique de Louvain, Université Catholique de Louvain, Soitec, CEA-LETI, CEA-LETI, Universite catholique de Louvain
(08:40 - 09:00)
Abstract
Th1I-4: Large-Signal Characterisation and Analysis of AlN/GaN MISHEMTs on Si with a PAE > 62% at 28 GHz
Rana ElKashlan, Sachin Yadav, Ahmad Khaled, DONGPING XIAO, Babak Kazemi, Hao Yu, AliReza Alian, Uthayasankaran Peralagu, Nadine Collaert, Bertrand Parvais
IMEC, IMEC, IMEC, IMEC, IMEC, IMEC, IMEC, IMEC, IMEC, IMEC
(09:00 - 09:20)

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Frederick Raab
Green Mountain Radio Research LLC.
Marc Franco
Macom
Location
145AB
Abstract

This session starts with a keynote presentation on an HF through UHF transceiver overview before moving to a presentation on a reconfigurable low pass filter. The session continues with a high isolation CMOS switch, a GaN supply modulator and finishes with a keynote presentation on analog predistortion applied to the HF through UHF frequency range.

Th2B-1: KEYNOTE: Modern HF/VHF/UHF transceivers and their applications
Ulrich Rohde
University of the Joint Forces
(10:10 - 10:30)
Abstract
Th2B-2: A 0.1–3.2 GHz Reconfigurable LPF With Peaking Reducing and Selectivity Enhancement Using Adaptive Impedance Transformation
Xu Cheng, Yun-Bo Rao, Xian-Hu Luo, Liang Zhang, Jiang-An Han, Rui Wu, Hai-Bo Tang, Xing-Dong Liang, Xian-Jin Deng, Hao Gao
Microsystems&Terahertz Research Center, CAEP, University of Electronic Science and Technology of, Microsystems&Terahertz Research Center, CAEP, Microsystems&Terahertz Research Center, CAEP, Microsystems&Terahertz Research Center, CAEP, Aerospace Information Research Institue, CAS, Chinese Academy of Sciences, Chinese Academy of Sciences, Microsystems&Terahertz Research Center, CAEP, Technische Univ. Eindhoven
(10:30 - 10:50)
Abstract
Th2B-3: High Isolation CMOS TDD RF Front-End using Sandwich-type Concentric Vortical Transformer and Leakage Elimination Technique
Shih-Hsuan Tsai, Shou-Jen Yang, Zhen-Ting Zhao, Hao-Shun Yang
National Taipei Univ. of Technology, National Taipei Univ. of Technology, National Taipei Univ. of Technology, National Taipei Univ. of Technology
(10:50 - 11:10)
Abstract
Th2B-4: A Monolithic GaN based Supply Modulator with Dual-Antibootstrap Level Shifter for Envelope Tracking Application
Chenhao Li, Qingyang Dong, Xin Jiang, Xinyu Liu, Ke Wei, Weijun Luo
Institute of Microelectronics, Institute of Microelectronics, Institute of Microelectronics, Institute of Microelectronics, Institute of Microelectronics, Institute of Microelectronics
(11:10 - 11:30)
Th2B-5: KEYNOTE: Understanding Linearization and Its Recent Developments
Allen Katz
Macom
(11:30 - 11:50)
David Brown
BAE Systems
Sensen Li
Univ. of Texas at Austin
Location
146A
Abstract

This session focuses on III-V and silicon power amplifiers (PAs) targeting D-band applications and beyond. It will start with a benchmark design of high-efficiency PAs in 250nm and 130nm InP HBT technologies at 220GHz, followed by a low-noise PA for the WR4.3 and WR3.4 bands in a 35nm InGaAs mHEMT technology. The next presentation from the session will talk about another InGaAs mHEMT PA covering 270-320GHz in a compact footprint. Next, analysis and design of a differential complex neutralization will be discussed, based on which a PA at D-band is implemented for efficient and linear applications. The session will be concluded with a presentation on a 10-230GHz InP distributed amplifier using Darlington quadruple-stacked HBTs.

Abstract
Th2C-1: 220-GHz High-Efficiency Power Amplifiers in 250-nm and 130-nm InP HBT Technologies having 14.4-25.0% PAE and 40-60 mW P,out
Zach Griffith, Miguel Urteaga, Petra Rowell
Teledyne Scientific, Teledyne Scientific Company, Teledyne Scientific Company
(10:10 - 10:30)
Abstract
Th2C-2: Low-Noise Power-Amplifier MMICs for the WR4.3 and WR3.4 Bands in a 35-nm Gate-Length InGaAs mHEMT Technology
Fabian Thome, Arnulf Leuther
Fraunhofer IAF, Fraunhofer IAF
(10:30 - 10:50)
Abstract
Th2C-3: Highly-Compact 20-mW, 270--320-GHz InGaAs mHEMT Power Amplifier MMIC
Laurenz John, Axel Tessmann, Sandrine Wagner, Arnulf Leuther
Fraunhofer IAF, Fraunhofer IAF, Fraunhofer IAF, Fraunhofer IAF
(10:50 - 11:10)
Abstract
Th2C-4: Analysis and Design of Differential Complex Neutralization Power Amplifiers for Efficient-Yet-Linear High Mm-Wave Applications
Mohamed Eleraky, Tzu-Yuan Huang, Yuqi Liu, Hua Wang
Swiss Federal Institute of Technology, Georgia Institute of Technology, ETH Zurich, Swiss Federal Institute of Technology
(11:10 - 11:30)
Abstract
Th2C-5: A 10-230-GHz InP Distributed Amplifier Using Darlington Quadruple-Stacked HBTs
Phat Nguyen, Natalie Wagner, Alexander Stameroff, Anh-Vu Pham
Univ. of California, Davis, Keysight Technologies, Keysight Technologies, Univ. of California, Davis
(11:30 - 11:50)
Wolfram Stiebler
Raytheon Company
Peter Magnee
NXP Semiconductors
Location
152AB
Abstract

This session includes papers featuring heterogeneous integration of N-polar GaN HEMTs with Si interposers at Ka band, high-power density Ka-band GaN MIS-HEMTs, and thermal characterization and modeling of coupling effects in GaN-based MMICs.

Th2I-1: KEYNOTE: GaN for infrastructure networks
Fred van Rijs
Ampleon
(10:10 - 10:30)
Abstract
Th2I-2: A Heterogeneously Integrated Ka-Band, N-Polar Gallium Nitride HEMT Amplifier
Justin Kim, Michael Hodge, Mark Soler, Florian Herrault, Daniel Green, James Buckwalter
PseudolithIC, Inc., Pseudolithic, Inc., PseudolithIC, Inc., PseudolithIC, Inc., PseudolithIC, Inc., PseudolithIC, Inc.
(10:30 - 10:50)
Abstract
Th2I-3: Ka band GaN MIS-HEMT with ALD-SiN gate dielectric and Lp-SiN passivation layer
Ke Wei, Yichuan Zhang, sheng Zhang, kaiyu wang, Jiaqi Guo, weijun Luo, haibo Yin, xinghua Wang, Xinyu Liu
university of chinese academy of science, Chinese Academy of Sciences, Chinese Academy of Sciences, Univ. of Chinese Academy of Sciences, Univ. of Chinese Academy of Sciences, Chinese Academy of Sciences, Chinese Academy of Sciences, Chinese Academy of Sciences, Chinese Academy of Sciences
(10:50 - 11:10)
Abstract
Th2I-4: Characterization and Modeling of Dynamic Thermal Coupling in GaN MMIC Power Amplifiers
Tobias Kristensen, Torbjörn Nilsson, Andreas Divinyi, Johan Bremer, Mattias Thorsell
Chalmers Univ. of Technology, Saab AB, Saab AB, Chalmers Univ. of Technology, Chalmers Univ. of Technology
(11:10 - 11:30)