Active Devices

The session features an industry keynote on advances in microwave synthesizer technology and presents advanced mm-wave signal generation techniques based on injection locking, quadrature generation, frequency multiplication, and harmonic generation using silicon-based and GaN HEMT technologies.

This session reports on recent advances in HBTs and HEMTs for microwave and mm-wave applications, covering InP, SiGe and GaN technologies. The state-of-the-art performance and reliability of HBT technology are addressed, as well as circuit examples. The noise behavior of InP HEMTs at cryogenic temperatures is discussed. Techniques for improving the performance of GaN HEMTs in next-generation power amplifiers are shown, including novel device designs and modeling.

This session is focused on the latest developments in CMOS low-noise amplifiers and receivers for wideband communication. The papers in the session cover frequency range from K-band to D-band. Furthermore, novel circuit techniques are reported to achieve low-noise performance and low power dissipation.

This session presents various advanced techniques for frequency conversion and signal generation. The range of topics includes broadband mixer, frequency multiplier, MEMS-based oscillator, SEU-aware VCO, and EBG-based mm-wave oscillator using silicon-based technologies.

Latest developments in InP, GaAs, MHEMT and SOI low-noise amplifiers and receivers. A Keynote presentation on InP HEMT technology will be followed by talks on low noise amplifiers and receiver for broadband communications and cryogenic applications.

This session covers advanced mixed-signal circuits and systems for frequency generation and high data-rate digital modulation. The session begins with an industry keynote on the design of low-jitter PLLs for 5G systems. The next three presentations address frequency generation circuits and systems including a 77GHz OFDM radar digital carrier synthesizer, a 142GHz prescaler and a 10GHz low-noise PFD. The session ends with a 120GBd optical Mach-Zehnder modulator driver and a 21Gbps PMCW radar PRBS generator.

The session presents new techniques and state-of-the-art examples of power amplifiers enhancing linearity, efficiency, and load modulation as well as dual-band class highly efficient switched amplifiers.

This session contains 5 valued papers from academia and industry, starting from a high data-rate communication Ka-band mm-wave phased array using 28nm technology and a compact Ka-band eight-element receiver for low-earth orbit satellite communication applications. The session will then present a phase shifter for 5G applications at 28GHz band with low RMS phase error. It also contains a K-band low-power FMCW radar for IoT application. The session ends with a 28GHz phased array with 24GHz wireless power transfer block using on-chip Butler matrix.

Advanced linearization techinques for power amplifier and wideband transmitters will be presented. Paper topics include: linearization of MIMO transmitters, FPGA implementation of dual-input digital predistorters, low-complexity DPD for handsets and DPD for linear phased arrays.

This session describes advances in GaN PAs for broadband applications and for high-frequency applications up to Ka-band. To increase bandwidth over the range 9.5–16.5GHz, covering the emerging FR3 wireless band, a novel L-C match with characteristics equivalent to those of a transformer is reported. Another amplifier covers the range 1.5 to 17GHz by separating the band into three frequency ranges, which can be selected by choosing the proper input and output bias networks. To address gain, efficiency and linearity for 5G FR2 (26–28GHz) operation, a balanced GaN stacked FET amplifier and a 3-way Doherty PA are demonstrated.

This session presents a variety of load-modulated power amplifiers in GaN, including Doherty and Load-Modulated Balanced Amplifier (LMBA), targeting high-power techniques. Methods of extending bandwidth and output power dynamic range will be discussed in both hybrid and MMIC implementations.

This session begins with an industry keynote on microwave photonics, followed by a plasmonic based imager. Next a kinetic inductance detector is presented, and then a THz detector in 16nm FinFET. The session concludes with a comb-based integrated photonics mm-wave transmission.

This session describes novel architectures for power amplifiers operating at >10W output power for both sub-6GHz and mm-wave frequencies. Techniques include exploiting nonlinear behaviors for efficiency or gain enhancement, and circuit realization both in spatial power-combining and packaging techniques.

This session opens with a wideband THz fundamental mixer enabling data rates up to 168Gbps, and is followed by low-loss substrate-integrated D-band waveguide technology for 6G applications. After that, broadband THz switches based on photoconductivity modulation are presented. The session concludes with a metamaterial lens for beam-steering applications.

The session will kick off with a review of HF through UHF power amplifier technology and applications, followed by presentations on power amplifiers using GaAs and GaN devices across the low end of the frequency spectrum.

Cost-effective Ka-band and above MMIC power amplifiers are presented in a variety of processes. GaN-on-SiC technology at Ka-W band is featured, along with a GaN MOS-HEMT process with GaN-on-Si in 300mm wafer diameter technology. Two Doherty SOI-CMOS PAs are presented and characterized while amplifying broadband signals.

mm-Wave MMIC amplifiers, including LNAs and PAs, are presented up to 300GHz in GaN, GaAs and InP technologies. Powers up to 4W are demonstrated in GaN with high efficiency, while state-of-the-art gain-bandwidth products are shown in both PAs and LNAs in an InGaAs mHEMT process. Multi-stage InB HBT power amplifier MMICs demonstrate high efficiency and power at D and H bands.