Active Devices

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Gayle Collins
Obsidian Microwave, LLC.
Yulong Zhao
Skyworks Solutions, Inc.
Location
211
Abstract

This session focuses on recent advances in Doherty power amplifiers. This load modulation technology is pushed to higher frequencies above 7GHz, higher output power, extended power back-off range, and unprecedented instantaneous bandwidth for emerging wireless infrastructure.

Tu1D-1: KEYNOTE: Load Modulated Power Amplifiers for Wireless Infrastructure
Rui Hou
Ericsson
(08:00 - 08:20)
Abstract
Tu1D-2: A 7GHz High Efficiency GaN Doherty Power Amplifier Module for 5G massive MIMO Base-Stations
Shuichi Sakata, Kento Saiki, Yuta Fuchibe, Katsuya Kato, Hitoshi Kurusu, Yoshinobu Sasaki, Shintaro Shinjo
Mitsubishi Electric Corp., Mitsubishi Electric Corp., Mitsubishi Electric Corp., Mitsubishi Electric Corp., Mitsubishi Electric Corp., Mitsubishi Electric Corp., Mitsubishi Electric Corp.
(08:20 - 08:40)
Abstract
Tu1D-3: A 90W High-Efficiency Four-Way Doherty Power Amplifier with 37.8% Fractional Bandwidth over a 15 dB Power Back-off Range
Lei Zhou, Leonardus de Vreede
Delft Univ. of Technology, Delft Univ. of Technology
(08:40 - 09:00)
Abstract
Tu1D-4: A 400W Symmetric Doherty Power Amplifier Covering 1.8-2.7 GHz
Paul Saad, Mats Helgöstam, Mats Helgöstam, Rui hou
Ericsson, Ericsson, Ericsson, Ericsson
(09:00 - 09:20)

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Charles Campbell
QORVO, Inc.
Anna Piacibello
Politecnico di Torino
Location
211
Abstract

This session includes several transmit components with over 10W of output power, including a decade-bandwidth 0.2-2GHz load-modulated balanced amplifier, several integrated Doherty PA modules and an E-mode dual-gate SPDT switch.

Abstract
Tu2D-1: RF-Input Doherty-Like Load-Modulated Balanced Amplifier with Decade Bandwidth Enabled by Novel Broadband 180-Degree Power Divider
Pingzhu Gong, Niteesh Bharadwaj Vangipurapu, Jiachen Guo, Kenle Chen
Univ. of Central Florida, Univ. of Central Florida, Univ. of Central Florida, Univ. of Central Florida
(10:10 - 10:30)
Abstract
Tu2D-2: An Integrated Doherty Power Amplifier Module Based on an Advanced GaN-on-Si HEMT Technology and a Wideband Power Combiner
Mustazar Iqbal, Ioannis Peppas, Marco Pitton, Peter Singerl
Infineon Technologies, Graz Univ. of Technology, Infineon Technologies Austria Ag, Infineon Technologies Austria AG
(10:30 - 10:50)
Abstract
Tu2D-3: System-in-Package Doherty Power Amplifier using Hybrid LDMOS/GaN line-up for 5G Macro Driver Applications
Alexis Courty, Kaisseh Houssein, Walid Rili, Christophe Quindroit, Mariano Ercoli, Stephan Maroldt
Ampleon, Ampleon, Ampleon, Ampleon, Ampleon, Ampleon
(10:50 - 11:10)
Abstract
Tu2D-4: 10 Watt CW Power Handling SPDT RF Switch Using E-mode p-GaN Dual-Gate HEMT Technology
Hsien-Chin Chiu, Chia-Han Lin, Chia-Hao Yu, Chong-Rong Huang, Hsuan-Ling Kao, Hsiang-Chun Wang, Po-Tsung Tu, Barry Lin
Chang Gung Univ., Chang Gung Univ., Chang Gung Univ., Chang Gung Univ., Chang Gung Univ., Industrial Technology Research Institute, Industrial Technology Research Institute, Wavetek Microelectronics Corporation
(11:10 - 11:30)

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John Wood
Obsidian Microwave, LLC.
Arvind Keerti
Qualcomm Technologies, Inc.
Location
215
Abstract

This session contains 5 papers on analog predistortion (APD) focusing on very high frequency, MIMO systems, and circuit techniques including phase-cancellation, Doherty and Darlington power amplifier architectures.

Abstract
Tu3E-1: Experimental Demonstration of E-Band Tunable Analog Predistortion
Dhecha Nopchinda, Herbert Zirath, Marcus Gavell
Gotmic AB, Chalmers Univ. of Technology, Gotmic AB
(13:30 - 13:50)
Abstract
Tu3E-2: An Integrable Analog Domain Linearization Architecture for the Power Amplifiers in MIMO Systems
Xiaozheng Wei, Ying Liu, Wensheng Pan, Qiang Xu, ma wanzhi, Shihai Shao
Univ. of Electronic Science and Technology of China, Univ. of Electronic Science and Technology of China, Univ. of Electronic Science and Technology of China, Univ. of Electronic Science and Technology of China, Univ. of Electronic Science and Technology of China, Univ. of Electronic Science and Technology of China
(13:50 - 14:10)
Abstract
Tu3E-3: Simple Analog Pre-distorter Design with Controllable AM/AM and AM/PM Distortion
Tsz-Wai Wendy Wong, Kwok-Keung Michael Cheng
The Chinese University Of Hong Kong, The Chinese University of Hong Kong
(14:10 - 14:30)
Abstract
Tu3E-4: A GaAs HBT Doherty Power Amplifier with 31 dBm Linear Output Power and 43% Efficiency by Using Dynamic IM3 Cancellation
Shihai He, Linjian Xu, Xuan Ding, Huan Chen, Hao Meng, Yongxue Qian
Beijing Onmicro Electronics Co.,Ltd. China, Beijing Onmicro Electronics Co.,Ltd., Univ. of California, Davis, Beijing Onmicro Electronics Co.,Ltd., Beijing Onmicro Electronics Co.,Ltd., Beijing Onmicro Electronics Co.,Ltd.
(14:30 - 14:50)
Abstract
Tu3E-5: A High-Linearity Quasi-Darlington Amplifier with Sub-Degree AM-PM for WLAN Applications
Yudan Zhang, Kaixue Ma, Pengfei Li, Kejie Hu
Tianjin Univ., Tianjin Univ., Tianjin Univ., Tianjin Univ.
(14:50 - 15:10)

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Robert Caverly
Villanova Univ.
Frederick Raab
Green Mountain Radio Research LLC.
Location
210
Abstract

This session features the latest developments in the production of RF power at frequencies up to 1 GHz. The session begins with a survey of transistors for production of 1 kW or more of RF power. Next the session addresses operation over wide bandwidths with both ferrite-loaded baluns and continuous-mode operation of an amplifier. Techniques for driving switching-mode power amplifiers and for directly interfacing high-efficiency amplifiers to antennas are described. Finally, the session includes a comparison of EER and Doherty techniques for high-efficiency operation at VHF.

Tu4C-1: KEYNOTE: Advancements in RF High Power Supply Chain and Ecosystem enabling transition from Vacuum Electron Devices to Multi-kW RF Solid-State Solutions and Systems
Gabriele Formicone, Tom Kole, Apet Barsegyan
Integra Technologies, Inc., Integra Technologies, Inc., Integra Technologies, Inc.
(15:40 - 16:00)
Abstract
Tu4C-2: Planar Low-Loss Ultra-Wideband Coaxial-Less Balun and 4-Way Combiner for High-Power Applications
Victor Bregeon, Anthony Ghiotto, Jose de Oliveira, Christophe Goujon, Guillaume Mouginot
THALES SIX GTS France, Bordeaux INP, THALES SIX GTS France, Direction Générale de l’Armement, Direction Générale de l’Armement
(16:00 - 16:20)
Abstract
Tu4C-3: Continuous Current Mode Class-F Power Amplifier: A Solution for Bandwidth Extension in Low Breakdown Voltage Applications
Daniel Alonso-Tejera, J. Apolinar Reynoso-Hernandez, José Loo-Yau, Manuel A. Pulido-Gaytán, María C. Maya-Sánchez, Jaime Sánchez-García, Eduardo A. Murillo-Bracamontes
CICESE, CICESE, Cinvestav Guadalajara, CICESE, CICESE, CICESE, CNyN-UNAM
(16:20 - 16:40)
Abstract
Tu4C-4: A Highly-Efficient 4.3 GBaud Push-Pull LDMOS Based Pre-Driver With 6V Signal-Swing for GaN HEMTs in 22 nm FDSOI
Frowin Buballa, Sebastian Linnhoff, Andreas Wentzel, Enne Wittenhagen, Thomas Hoffmann, Wolfgang Heinrich, Friedel Gerfers
Technische Univ. Berlin, Technische Univ. Berlin, Ferdinand-Braun-Institut, Technische Univ. Berlin, Ferdinand-Braun-Institut, Ferdinand-Braun-Institut, Technische Univ. Berlin
(16:40 - 16:50)
Abstract
Tu4C-5: High-Efficiency VHF Polar and Doherty Amplifiers for Satellite Transponder Applications
Diego Madueño-Pulido, Moises Patiño-Gomez, Francisco Javier Ortega-Gonzalez
Indra, Univ. Politecnica de Madrid, Univ. Politecnica de Madrid
(16:50 - 17:10)
Abstract
Tu4C-6: Highly-Efficient and Low-Power Class-E Amplifier for Miniaturization using a Small Antenna
Ferry Lanter, Adrian Sutinjo
Curtin University, Curtin University
(17:10 - 17:20)
Luis Cotimos
Instituto De Telecomunicacoes
Pere L. Gilabert
Univ. Politècnica de Catalunya
Location
215
Abstract

This session consists of 5 papers including the keynote paper "Efficiency Enhancements using Digital Predistortion and
Advanced Transmitters". The remaining 4 papers address the challenges of linearization in emerging phased-arrays systems, novel machine learning and DSP solutions to improve radio performance.

Tu4E-1: KEYNOTE: Efficiency Enhancements using Digital Predistortion and Advanced Transmitters
Paul Draxler
Eridan Communications
(15:40 - 16:00)
Abstract
Tu4E-2: Predistortion of GaN Power Amplifier Transient Responses in Time-Division Duplex Using Machine Learning
Arne Fischer-Bühner, Lauri Anttila, Alberto Brihuega, Manil Dev Gomony, Mikko Valkama
Nokia-Bell Labs, Tampere Univ., Nokia, Nokia-Bell Labs, Tampere Univ.
(16:00 - 16:20)
Abstract
Tu4E-3: Reference Phase Adjustment Technique with Cross-Polarization Cancellation for Enhanced Digital Predistortion in Mobile Dual-Polarized Arrays
Uichan Park, Jungsuek Oh
Seoul National Univ., Seoul National Univ.
(16:20 - 16:40)
Abstract
Tu4E-4: Phase Derivative Approach for Nonlinear Power Amplifier Forward Modeling with 2-D LUTs
Vesa Lampu, Lauri Anttila, Mikko Valkama
Tampere Univ., Tampere Univ., Tampere Univ.
(16:40 - 17:00)
Abstract
Tu4E-5: Neural Network based Nonlinear Forward Model Identification for Digital MIMO Arrays under Load Modulation
Joel Fernandez, Lauri Anttila, Koen Buisman, Vesa Lampu, Christian Fager, Thomas Eriksson, Mikko Valkama
Tampere Univ., Tampere Univ., Univ. of Surrey, Tampere Univ., Chalmers Univ. of Technology, Chalmers Univ. of Technology, Tampere Univ.
(17:00 - 17:20)

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Hong-Yeh Chang
National Central Univ.
Steve Maas
Nonlinear Technologies
Location
211
Abstract

This session presents advanced frequency converters and modulators using silicon-based and III-V semiconductor technologies. The wide range of topics including frequency multiplication, frequency mixing, and I/Q modulators will be discussed.

Abstract
We1G-1: A Q-Band Ultra-Low-Jitter Subharmonically Injection-Locked Frequency Quadrupler with FTL and Switched-Capacitor Array
Po-Yuan Chen, Hong-Yeh Chang
National Central Univ., National Central Univ.
(08:00 - 08:20)
Abstract
We1G-2: A 22-34 GHz CMOS Neutralization-Based Direct-Conversion I/Q Up-Converter for 1024-QAM Modulation
Cheng-Yang Lee, Po-Yuan Chen, Hong-Yeh Chang
National Central Univ., National Central Univ., National Central Univ.
(08:20 - 08:40)
Abstract
We1G-3: A 14.5 Gb/s, 2.75 pJ/bit, Direct-Digital, Star-QAM Modulator and Co-Designed Frequency Multiplier Operating at 140 GHz
Shah Zaib Aslam, Asif Iftekhar Omi, Baibhab Chatterjee, David Arnold
Univ. of Florida, Univ. of Florida, Univ. of Florida, Univ. of Florida
(08:40 - 09:00)
Abstract
We1G-4: Monolithic Implementation and Performance Comparison of three Single Balanced Architectures for D-Band HEMT Mixers
Patrick Umbach, Fabian Thome, Arnulf Leuther, Rüdiger Quay
Fraunhofer Institute for Applied Solid State Physics, Fraunhofer Institute for Applied Solid State Physics, Fraunhofer Institute for Applied Solid State Physics, Fraunhofer Institute for Applied Solid State Physics
(09:00 - 09:20)
Abstract
We1G-5: A DC-to-170GHz Direct-Coupled Mixer Achieving 47dB LO-RF Isolation in 250nm InP DHBT Technology
Ping Xiang, Kunming Yang, Weibo Wang, Wei Cheng, Yinghao Chen, Heyu Miao, Yingmei Chen
Southest Univerity, Southeast Univ., Nanjing Electronic Devices Institute, Nanjing Electronic Devices Institute, Southest Univerity, Southest Univerity, Southest Univerity
(09:20 - 09:40)
Taylor Barton
Univ. of Colorado
Rajah Vysyaraju
Macom
Location
215
Abstract

This session presents power amplifiers in GaN and GaAs MMIC technologies. These topics cover continuous mode techniques with active and passive harmonic control.

We1H-1: KEYNOTE: LNA and Power Amplifiers for Operation up to 100GHz
David Runton, Ray Moroney, Graham Board, Amer Droubi
Macom, Macom, Macom, Macom
(08:00 - 08:20)
Abstract
We1H-2: A Ku-Band Input Harmonically Tuned Class-F GaAs MMIC Power Amplifier Achieving 28.4-dBm Psat and 56% Peak PAE
Kyung Pil Jung, Seung Hun Kim, Sungjae Oh, Jungsik Kim, Seong-Kyun Kim, Dongjin Jung, Dae Young Lee
Korea Advanced Institute of Science and Technology, Samsung Research, Korea, Samsung Research, Samsung Electronics, Samsung Research, Korea, Samsung Electronics Co., Ltd., Samsung Research, Korea
(08:20 - 08:40)
Abstract
We1H-3: A Continuous-Mode Class-F-1 X-band GaN MMIC Power Amplifier with a 29.7 % Fractional Bandwidth
Yu-Hsiang Shang, Kun-Yi Chuang, Hsin-Chieh Lin, Yin-Cheng Chang, Da-Chiang Chang, Shawn S. H. Hsu
National Tsing Hua Univ., National Tsing Hua Univ., Taiwan Semiconductor Research Institute, Taiwan Semiconductor Research Institute, Taiwan Semiconductor Research Institute, National Tsing Hua Univ.
(08:40 - 09:00)
Abstract
We1H-4: An X-band 35-dBm Compact Continuous-Mode Class-J Power Amplifier in 0.25-μm GaN Process
YIFU CHEN, Jia-Jia Chen, Po-Yuan Chen, Hong-Yeh Chang
National Central Univ., National Central Univ., National Central Univ., National Central Univ.
(09:00 - 09:20)
Abstract
We1H-5: An X-Band Low-Voltage GaN HEMT Stacked Power Amplifier Operating in Class-J with Active Second Harmonic Injection
Atsushi Yamaguchi, Kazumasa Kohama, Masayuki Shimada
Sony Semiconductor Solutions Corporation, Sony Semiconductor Solutions Corporation, Sony Semiconductor Solutions Corporation
(09:20 - 09:40)

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Steve Maas
Nonlinear Technologies
Austin Chen
Infinera Corp.
Location
211
Abstract

This session presents advanced RF/mm-wave frequency multiplication techniques from Ku- to G-band using a variety of technologies including CMOS, FDSOI, SiGe, and InP.

Abstract
We2G-1: A 13.7-41 GHz Ultra-wideband Frequency Doubler with Cross-coupled Push-push Structure Achieving 10.6% Peak Efficiency and 7-dBm Psat
Kai Li, Keping Wang
Tianjin Univ., Tianjin Univ.
(10:10 - 10:30)
Abstract
We2G-2: A 110-130-GHz, Frequency Quadrupler With 12.5% Drain Efficiency in 22-nm FD-SOI CMOS
Justin Kim, Jeff Shih-Chieh Chien, James Buckwalter
Univ. of California, Santa Barbara, Univ. of California, Santa Barbara, Univ. of California, Santa Barbara
(10:30 - 10:50)
Abstract
We2G-3: A D-Band ×15 Frequency Multiplier Chain in 45nm SiGe BiCMOS for Board-Level Packaged Array Applications
Runzhou Chen, Hao-Yu Chien, Christopher Chen, Boxun Yan, Chih-Kong Ken Yang, Mau-Chung Frank Chang
Univ. of California, Los Angeles, Univ. of California, Los Angeles, Univ. of California, Los Angeles, Univ. of California, Los Angeles, Univ. of California, Los Angeles, Univ. of California, Los Angeles
(10:50 - 11:10)
Abstract
We2G-4: A 100-180-GHz InP Distributed Frequency Doubler with 11.5 dBm Peak Output Power using a Power-Bandwidth Enhancement Technique
Phat Nguyen, Viet-Anh Ngo, Nhat Tran, Natalie Wagner, Alexander Stameroff, Anh-Vu Pham
Univ. of California, Davis, Univ. of California, Davis, Univ. of California, Davis, Keysight Technologies, Keysight Technologies, Univ. of California, Davis
(11:10 - 11:30)
Abstract
We2G-5: A 220-280 GHz InP Frequency Doubler with a Compact, Low-Loss Folded Marchand Balun
Tyler Shepard, Phat Nguyen, Natalie Wagner, Alexander Stameroff, Anh-Vu Pham
Univ. of California, Davis, Keysight Technologies, Keysight Technologies, Keysight Technologies, Univ. of California, Davis
(11:30 - 11:50)
Rajah Vysyaraju
Macom
Wing Shing Chan
City Univ. of Hong Kong
Location
215
Abstract

This session focuses on several papers on high-efficiency power amplifier design techniques in GaAs HBT, CMOS, SOI and EDMOS technologies for 6G FR3 handset and MIMO radar applications.

Abstract
We2H-1: Efficient InGaP/GaAs HBT Differential Power Amplifier Using a New Adaptive Cross-Capacitor bias circuit for 6G FR3 Handset applications
Sooji Bae, Byeongcheol Yoon, Seungju Lee, Sungwoon Hwang, Jooyoung Jeon, Junghyun Kim
Hanyang Univ., Hanyang Univ., Hanyang Univ., Hanyang Univ., Gangneung-Wonju National University, Hanyang Univ.
(10:10 - 10:30)
Abstract
We2H-2: A High-Efficiency GaAs HBT Power Amplifier for 6G FR3 Applications
Jung-Tao Chung, Keng-Li Hsu, CHANG CHENG TE, Kai-Chen Feng, Kun-You Lin, Chao-Hsin Wu, Jyun-Hao Li, Shao-Yu Tu, Tung-Yao Chou, Shu-Hsiao Tsai, Cheng-Kuo Lin
National Taiwan Univ., National Taiwan Univ., National Taiwan Univ., National Taiwan Univ., National Taiwan Univ., National Taiwan Univ., WIN Semiconductors Corp., WIN Semiconductors Corp., WIN Semiconductors Corp., WIN Semiconductors Corp., WIN Semiconductors Corp.
(10:30 - 10:50)
Abstract
We2H-3: A 9-to-13.5 GHz 29.2-dBm-PSAT 44.4%-PAE Power Amplifier Using Extended Cascode Cores and 4-to-1 Folded Transformers in 130-nm CMOS SOI
Yiting Zhang, Nengxu Zhu, Fanyi Meng
Tianjin Univ., Tianjin Univ., Tianjin Univ.
(10:50 - 11:10)
Abstract
We2H-4: A Compact Doubly Neutralized Ku Band Power Amplifier with 39% Peak PAE and 23 dBm Output Power in 22FDX+ EDMOS for 6G FR3
Jinglong Xu, Mohamed Eleraky, Tzu-Yuan Huang, Chenhao Chu, Hua Wang
ETH Zurich, ETH Zürich, ETH Zurich, ETH Zurich, ETH Zurich
(11:10 - 11:30)
Abstract
We2H-5: A 24 GHz Power Amplifier with a Switching Output Combiner for a Dual-mode MIMO Radar System
Yu-Chen Pan, Zi-Hao Fu, Yi-Chu Chen, Hsiang-Chieh Jhan, Jia-Wei Ye, Mike Chun Hung Wang, Kun-You Lin
National Taiwan Univ., National Taiwan Univ., Kaikutek, Kaikutek, National Taiwan Univ., Kaikutek, National Taiwan Univ.
(11:30 - 11:50)

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Amit Jha
Infinera Corp.
Sushil Kumar
National Instruments
Location
211
Abstract

This session presents low-phase noise signal generation from X- to D-band using a variety of technologies including bulk CMOS, FDSOI, GaAs, and FinFET.

Abstract
We3G-1: A 7.8–11.9 GHz Quad-Mode Class-F2,3 VCO with Multi-Stage Cross-Shared Common-Mode Path Achieving –131.9 dBc/Hz 1-MHz Phase Noise and 201.8 dBc/Hz FoMT
Yu Wang, Yiyang Shu, Qiao Leng, Xun Luo
Univ. of Electronic Science and Technology of China, Univ. of Electronic Science and Technology of China, Univ. of Electronic Science and Technology of China, Univ. of Electronic Science and Technology of China
(13:30 - 13:50)
Abstract
We3G-2: A 19.3-to-27.3GHz Area-Reuse Double Dual-Core Complementary Class-F-1 VCO with Non-Interfering Multiple Resonances Achieving 203.3dBc/Hz FoMT and 213.3dBc/Hz FoMTA
Zijian Zhao, Yiyang Shu, Jiacheng Xie, Xun Luo
Univ. of Electronic Science and Technology of China, Univ. of Electronic Science and Technology of China, Univ. of Electronic Science and Technology of China, Univ. of Electronic Science and Technology of China
(13:50 - 14:10)
Abstract
We3G-3: A 60 GHz Super Harmonic Injection Locked Oscillator with Quadrature Outputs
Mengqi Cui, Xin Xu, Jens Wagner, Frank Ellinger
Technische Univ. Dresden, Technische Univ. Dresden, Technische Univ. Dresden, Technische Univ. Dresden
(14:10 - 14:30)
Abstract
We3G-4: Low-Power and Low-Phase Noise 94-GHz and 107.2-GHz Differential Fundamental Oscillators in 70-nm GaAs pHEMT Technology
Chih-Ju Wu, Xu Jiang, Austin Ying-Kuang Chen, Jung-Tao Chung, Li-Cheng Chang, Lung-Yi Tseng, Chung-Tse Michael Wu
National Taiwan Univ., National Taiwan Univ., Univ. of California, Santa Cruz, WIN Semiconductors Corp., WIN Semiconductors Corp., WIN Semiconductors Corp., National Taiwan Univ.
(14:30 - 14:50)
Abstract
We3G-5: A 134 GHz High Efficiency High Power Fundamental Oscillator in 16nm p-FinFET with 12 dBm Output Power and 6.5% DC-to-RF Efficiency
Lachlan Cuskelly, Yongho Lee, Christopher Chen, Daquan Huang, Mau-Chung Frank Chang
Univ. of California, Los Angeles, Univ. of California, Los Angeles, Univ. of California, Los Angeles, Univ. of California, Los Angeles, Univ. of California, Los Angeles
(14:50 - 15:10)
Vittorio Camarchia
Politecnico di Torino
Peter Asbeck
Univ. of California, San Diego
Location
215
Abstract

This session focuses on advancements in power amplifiers using load-modulation architectures to improve efficiency at back-off power levels, as needed in most modulation formats today.  Papers cover work at frequencies between 2 GHz and 30 GHz, and technologies including CMOS-SOI, GaAs HBT, Gas pHEMT and GaN.

We3H-1: KEYNOTE: Future State of GaN MMIC Technology for Defense Electronics
David Brown, Puneet Srivastava, Kanin Chu, Isaac Wildeson, Michael Litchfield, Douglas Dugas
BAE Systems, BAE Systems, BAE Systems, BAE Systems, BAE Systems, BAE Systems
(13:30 - 13:50)
Abstract
We3H-2: A Broadband Doherty-like Load-Modulated Balanced Amplifier with an Optimized Impedance Transformation Ratio in InGaP/GaAs HBT Process for Handset applications
Byeongcheol Yoon, Sooji Bae, Seungju Lee, Sungwoon Hwang, Jooyoung Jeon, Junghyun Kim
Hanyang Univ., Hanyang Univ., Hanyang Univ., Hanyang Univ., Gangneung-Wonju National University, Hanyang Univ.
(13:50 - 14:10)
Abstract
We3H-3: Wideband 3-W GaAs MMIC Doherty PA with Stacked Devices and Load Variation Tolerance under 2.5:1 VSWR
Anna Piacibello, Giulia Bartolotti, Vittorio Camarchia
Politecnico di Torino, Politecnico di Torino, Politecnico di Torino
(14:10 - 14:30)
Abstract
We3H-4: A Sub-6 GHz Ultra-Compact 69.8 % Drain Efficiency Harmonic Control Doherty Power Amplifier in GaN Technology
Sih-Han Li, Zhang Jie, Shawn S. H. Hsu
Industrial Technology Research Institute, Industrial Technology Research Institute, National Tsing Hua Univ.
(14:30 - 14:50)
Abstract
We3H-5: A Ka-Band GaN Doherty Power Amplifier with High Efficiency Over a Fractional Bandwidth of 20.4%
Moïse Safari Mugisho, Christian Friesicke, Mohammed Ayad, Thomas Maier, Rüdiger Quay
Fraunhofer Institute for Applied Solid State Physi, Fraunhofer Institute for Applied Solid State Physics, United Monolithic Semiconductors, Fraunhofer Institute for Applied Solid State Physics, Fraunhofer Institute for Applied Solid State Physics
(14:50 - 15:10)

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David Brown
BAE Systems
Munkyo Seo
Sungkyunkwan Univ.
Location
211
Abstract

This session will showcase state of the art MMIC performance at frequency bands covering E-band (74, 84 GHz) through D-band (110-170 GHz). MMIC technologies ranging from state of the art 100 nm GaN-on-SiC, commercial GaAs PHEMT, and 40 nm bulk CMOS processes are presented. These results represent new benchmark performance results for these technologies and showcase high-performance on-chip power combining techniques and these amplifiers are applicable to a range of RF applications including E-band wireless backhaul, 6G communications, D-band radar and imaging, satellite communications, and defense electronics.

Abstract
Th1F-1: A High-efficiency E-band GaN Doherty Power Amplifier with 35.7 dBmOutput Power and 22.8%/16.8% Peak/6-dB Back-off Efficiency
Bharath kumar Cimbili, Mingquan Bao, Moïse Safari Mugisho, Christian Friesicke, Sandrine Wagner, Rüdiger Quay
Universität Freiburg, Ericsson, Universität Freiburg, Fraunhofer Institute for Applied Solid State Physics, Fraunhofer Institute for Applied Solid State Physics, Fraunhofer Institute for Applied Solid State Physics
(08:00 - 08:20)
Abstract
Th1F-2: E-band Power Amplifier with 32.2dBm Psat, 31.3dBm OP1dB Utilizing Commercial 0.10-μm GaAs pHEMT Technology
zhenbei li, Qiuze Yu, Jian Zhang
Wuhan Univ., Wuhan Univ., Wuhan Univ.
(08:20 - 08:40)
Abstract
Th1F-3: A Compact Wideband Low-loss On-chip Power Combiner for High-efficiency GaN mm-wave Power Amplifiers
Bharath kumar Cimbili, Mingquan Bao, Christian Friesicke, Sandrine Wagner, Rüdiger Quay
Ericsson, Ericsson, Fraunhofer Institute for Applied Solid State Physics, Fraunhofer Institute for Applied Solid State Physics, Fraunhofer Institute for Applied Solid State Physics
(08:40 - 09:00)
Abstract
Th1F-4: A 16-way 115-129 GHz High Power Amplifier with 20.9 dBm PSAT and 17.6 dBm P1dB in 40 nm Bulk CMOS
KIM JAEGWAN, Munkyo Seo
Sungkyunkwan Univ., Sungkyunkwan Univ.
(09:00 - 09:20)

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Nguyen Nguyen
Univ. of California, Davis
Kevin Kobayashi
QORVO, Inc.
Location
211
Abstract

The session focusses an advanced compound semiconductor integrated-circuits for broadband and phased-array applications. The session will kick-off with an invited talk on the advances in mm-wave and THz-amplifier technology and design. Advanced PA, DPD, linearization, and power combining techniques will be described as well as a highly-integrated 300 GHz active phased-array.

Th2F-1: KEYNOTE: InP HBT Technologies for Integrated Circuit Development of Efficient mm-Wave and THz Power Amplifiers and Sources
Zach Griffith, Urteaga, Rowell, Tran, Hacker, Brar
Teledyne Technologies, Teledyne Technologies, Teledyne Technologies, Teledyne Technologies, Teledyne Technologies, Teledyne Technologies
(10:10 - 10:30)
Abstract
Th2F-2: 300-GHz-Band InP HBT Power Amplifier Module Enabling 280-Gbps 0-dBm Signal Generation with Digital Predistortion
Teruo Jyo, Sam Kusano, Hiroaki Katsurai, Hiroshi Hamada, Munehiko Nagatani, Miwa Mutoh, Yuta Shiratori, Hiroyuki TAKAHASHI
NTT Corporation, Keysight Technologies, NTT Innovative Devices Corporation, NTT Device Technology Laboratories, NTT Corporation, NTT Corporation, NTT Corporation, Nippon Telegraph and Telephone Corp.
(10:30 - 10:50)
Abstract
Th2F-3: 300 GHz 8×1 Active Phased Array MMIC with On-Chip Power Amplifiers, Vector Modulators, and Antennas
Bersant Gashi, Laurenz John, Konstantin Kuliabin, Arnulf Leuther, Rüdiger Quay
Fraunhofer Institute for Applied Solid State Physics, Fraunhofer Institute for Applied Solid State Physics, Univ. of Freiburg, Fraunhofer Institute for Applied Solid State Physics, Fraunhofer Institute for Applied Solid State Physics
(10:50 - 11:10)
Abstract
Th2F-4: A 208 GHz InP Distributed Amplifier with Combining Loss Reduction Techniques
Can Cui, Nguyen Nguyen, Phat Nguyen, Natalie Wagner, Alexander Stameroff, Anh-Vu Pham
Univ. of California, Davis, Univ. of California, Davis, Univ. of California, Davis, Keysight Technologies, Keysight Technologies, Univ. of California, Davis
(11:10 - 11:30)
Abstract
Th2F-5: A Broadband InP Darlington Amplifier with Two-Way Distributed Power Combining
Lianbo Liu, Zhaojing Fu, Sensen Li
Univ. of Texas at Austin, Univ. of Texas at Austin, Univ. of Texas at Austin
(11:30 - 11:50)
Mohammad Ghadiri
Kyocera America, Inc.
Damla Dimlioglu
Cornell Univ.
Location
215
Abstract

This session presents novel receiver front-end designs, showcasing innovations in LNAs, phase shifters, and broadband receivers.

Abstract
Th2G-1: A Ku-Band CMOS LNA with Symmetric Polarity-Selective Transformer for Efficient 180° Phase Shifting
Jae-Hyeok Song, Jeong-Taek Lim, Jae-Eun Lee, Jeong-Taek Son, Joon-Hyung Kim, Min-Seok Baek, Eun-Gyu Lee, Choul-Young Kim
Chungnam National Univ., Chungnam National Univ., Chungnam National Univ., Chungnam National Univ., Chungnam National Univ., Chungnam National Univ., Chungnam National Univ., Chungnam National Univ.
(10:10 - 10:30)
Abstract
Th2G-2: A 130 GHz 360° Gain-invariant Phase Shifter with 5.625° Phase Resolution, 0.19° RMS Phase Error and < 0.56 dB RMS Gain Error
Jirui Li, Peiting Li, Peigen Zhou, Wei Hong
Southeast Univ., Southeast Univ., Southeast Univ., Southeast Univ.
(10:30 - 10:50)
Abstract
Th2G-3: An 86-90 GHz Adaptive Gain CMOS LNA with Linearity Enhancement & -6 dBm Blocker Tolerance
Harsh Pallav Govind Rao, Tal Elazar, Eran Socher
Tel-Aviv Univ., Tel-Aviv Univ., Tel-Aviv Univ.
(10:50 - 11:00)
Abstract
Th2G-4: A 71–86-GHz Receiver with 5-GHz IF Signal Bandwidth for E-Band Broadband Communication in 65-nm CMOS
Wenyan Zhao, Quanyong Li, Jingwen Xu, Bing Ruan, Lujia Wu, Nayu Li, Xiaokang Qi, Chunyi Song, Zhiwei Xu
Zhejiang Univ., Zhejiang Univ., Zhejiang Univ., Zhejiang Univ., Zhejiang Univ., Donghai Laboratory, Zhejiang Univ., Zhejiang Univ., Donghai Laboratory
(11:00 - 11:10)
Abstract
Th2G-5: A 6.5-GHz Low-Power Self-Interference Cancellation Receiver with Two-Stage Feedforward Technique and Automatic Gain Control Loop
Teng-Shen Yang, Yi-Chieh Chang, Liang-Hung Lu
National Taiwan Univ., National Taiwan Univ., National Taiwan Univ.
(11:10 - 11:30)
Abstract
Th2G-6: First Demonstration of a MMIC Low-Noise Amplifier Operating at Ka-band Realized with Enhancement-mode Gallium Nitride HEMTs
Patrick Longhi, Philippe Altuntas, Mohamed Salah Khenissa, Peter Frijlink, Charles Edoua Kacou, Julien Poulain, Walter Ciccognani, Sergio Colangeli, Antonio Serino, Vanya Sharma, Ernesto Limiti
Univ. of Rome Tor Vergata, Macom, Macom, Macom, Macom, Macom, Univ. of Rome Tor Vergata, Univ. of Rome Tor Vergata, Univ. of Rome Tor Vergata, Univ. of Rome Tor Vergata, Univ. of Rome Tor Vergata
(11:30 - 11:50)

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Wolfram Stiebler
Raytheon Company
Lei Zhang
NXP Semiconductors
Location
205
Abstract

This session discusses deep-levels and high field-effects in GaN devices including HEMTs and IMPATT diodes. Additional topics include performance implications gate insulator and metallization design. The session concludes with the characterization of substrates down to cryogenic temperatures.

Abstract
Th3B-1: Deep Level effects and Hot-Electron Reliability in Scaled GaN HEMTs
Enrico Zanoni, Andrea Carlotto, Francesco De Pieri, Manuel Fregolent, Marco Saro, Fabiana Rampazzo, Carlo De Santi, Gaudenzio Meneghesso, Matteo Meneghini
Univ. of Padova, Univ. of Padova, Univ. of Padova, Univ. of Padova, Univ. of Padova, Univ. of Padova, Univ. of Padova, Univ. of Padova, Univ. of Padova
(13:30 - 13:50)
Abstract
Th3B-2: On-wafer Characterization of K-Band to V-Band GaN IMPATT Diodes
Zhongtao Zhu, Lina Cao, Juncheng Xiong, Yu Duan, Yu-En Jeng, Jinqiao Xie, Patrick Fay
Univ. of Notre Dame, Univ. of Notre Dame, Univ. of Notre Dame, Univ. of Notre Dame, Univ. of Notre Dame, QORVO, Inc., Univ. of Notre Dame
(13:50 - 14:10)
Abstract
Th3B-3: AlN/GaN MIS-HEMT With GeN Gate Dielectric for mm-Wave Applications
Jianchao Wang, Kaiyu Wang, Ruizhe Zhang, Xiaoqiang He, Sheng Zhang, Jiaqi Guo, Jiebin Niu, Yankui Li, Weichao Wu, Weijun Luo, Xiaojuan Chen, Sen Huang, Xinhua Wang, Ke Wei, Xinyu Liu
Institute of Microelectronics, Institute of Microelectronics,CAS, Institute of Microelectronics,CAS, Institute of Microelectronics,CAS, Institute of Microelectronics,CAS, Institute of Microelectronics,CAS, Institute of Microelectronics,CAS, Institute of Microelectronics,CAS, Institute of Microelectronics,CAS, Institute of Microelectronics,CAS, Institute of Microelectronics,CAS, Institute of Microelectronics,CAS, Institute of Microelectronics,CAS, Institute of Microelectronics, China, Institute of Microelectronics,CAS
(14:10 - 14:30)
Abstract
Th3B-4: Influence of Double-Deck T-gate Structures on Cut-Off Frequency in Al0.3Ga0.7N/AlN/GaN HEMTs
Jong Yul Park, Junhyung Jeong, Gyejung Lee, Kyujun Cho, Junhyung Kim, Byoung-Gue Min, Jong-Min Lee, Woojin Chang, HONG-GU JI, Dong-Min Kang
Electronics and Telecommunications Research Institute, Electronics and Telecommunications Research Institute, Electronics and Telecommunications Research Institute, Electronics and Telecommunications Research Institute, ETRI, Electronics and Telecommunications Research Institute, Electronics and Telecommunications Research Institute, Electronics and Telecommunications Research Institute, Electronics and Telecommunications Research Institute, Electronics and Telecommunications Research Institute
(14:30 - 14:50)
Abstract
Th3B-5: Small- and Large-Signal Characterization of RF Substrates down to Cryogenic Temperatures
JOSE LUGO-ALVAREZ, QUENTIN BERLINGARD, ISMAEL CHARLET, MIKAEL CASSE
CEA-LETI, CEA-LETI, CEA-LETI, CEA-LETI
(14:50 - 15:10)
Roee Ben Yishay
Mobileye
Shirin Montazeri
Google
Location
215
Abstract

This session is focused on the latest developments in integrated low noise amplifiers for wideband communication. The papers in the session cover frequency range from C-Band to D-Band. Furthermore, novel circuit techniques are reported to achieve low-noise performance and low power dissipation.

Abstract
Th3G-1: A C/X-Band LNA Leveraging a Voltage-Tapered Gain-Cell Stacking Technique for 6G and IR-UWB
Bo Lindstrom, Jesse Moody
Kansas State Univ., Sandia National Laboratories
(13:30 - 13:50)
Abstract
Th3G-2: An 8-12.2GHz CMOS Low-Noise Amplifier with Partially Tail-Coupled Transformer and Large-Transistor Achieving 1.8 dB Average NF
Min-Seok Baek, Jae-Hyeok Song, Jae-Eun Lee, Jong-Seong Park, Ilhun Kim, Jeong-Taek Lim, Eun-Gyu Lee, Seong-Mo Moon, Dongpil Chang, Choul-Young Kim
Chungnam National Univ., Chungnam National Univ., Chungnam National Univ., Chungnam National Univ., Chungnam National Univ., Chungnam National Univ., Chungnam National Univ., ETRI, ETRI, Chungnam National Univ.
(13:50 - 14:10)
Abstract
Th3G-3: Broadband LNA with Dual-Resonance Matching Network with Capacitive Feedback for Improved Gain and Noise Figure Using 0.1-μm GaAs pHEMT Technology
Jong-Seong Park, Jeong-Taek Son, Joon-Hyung Kim, Min-Seok Baek, Byeong-Chan Lee, Eun-Gyu Lee, Jeong-Taek Lim, Seong-Mo Moon, Dongpil Chang, Choul-Young Kim
Chungnam National Univ., Chungnam National Univ., Chungnam National Univ., Chungnam National Univ., Chungnam National Univ., Chungnam National Univ., Chungnam National Univ., ETRI, ETRI, Chungnam National Univ.
(14:10 - 14:30)
Abstract
Th3G-4: A 140 GHz Low-Noise Amplifier in 45 nm RFSOI Based on a Joint-Noise-and-Gain-Optimized Embedding Network
Phong Nguyen, Harish Krishnaswamy
Columbia Univ., Columbia Univ.
(14:30 - 14:50)
Abstract
Th3G-5: A 50–70.9-GHz LNA with Defectly-Coupled-Transformer Achieving sub-4 dB NF and 298.6-GHz GBW for 5GNR-FR2-2 and SATCOM
Aoran Han, Deshan Tang, Xun Luo
Univ. of Electronic Science and Technology of China, Univ. of Electronic Science and Technology of China, Univ. of Electronic Science and Technology of China
(14:50 - 15:10)