Active Devices

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José Luis Gonzalez-Jimenez
CEA-LETI
Danny Elad
Indie Semiconductor
Location
31C
Abstract

The session features an industry keynote on advances in microwave synthesizer technology and presents advanced mm-wave signal generation techniques based on injection locking, quadrature generation, frequency multiplication, and harmonic generation using silicon-based and GaN HEMT technologies.

Abstract
Tu1E-1: INDUSTRY KEYNOTE: Advances in Microwave Synthesizer Technology
Alexander Chenakin
Anritsu
(08:00 - 08:20)
Abstract
Tu1E-2: A V-Band CMOS Sextuple Sub-Harmonically Injection-Locked VCO Using Transformer and Cascade-Series Coupling with FTL
Wei-Cheng Chen, Hong-Yeh Chang
National Central Univ., National Central Univ.
(08:20 - 08:40)
Abstract
Tu1E-3: A 67GHz High Output Power QVCO with 9.9% Efficiency and Improved Phase Noise in a 130nm SiGe:C Technology
David Starke, Sven Thomas, Christian Bredendiek, Klaus Aufinger, Nils Pohl
Ruhr-Universität Bochum, Stadtwerke Bochum, Fraunhofer FHR, Infineon Technologies, Ruhr-Universität Bochum
(08:40 - 09:00)
Abstract
Tu1E-4: A V-Band LC-VCO and Doubler with Wide Tuning Range and Low Phase Noise Using Series-Shunt Anti-Parallel SiGe HBT Switches
Wonsub Lim, Arya Moradinia, Sanghoon Lee, Clifford D. Cheon, Christopher T. Coen, Nelson E. Lourenco, John D. Cressler
Georgia Tech, Georgia Tech, Georgia Tech, Georgia Tech, Georgia Tech, Georgia Tech, Georgia Tech
(09:00 - 09:20)
Abstract
Tu1E-5: A 110-GHz Push-Push Balanced Colpitts Oscillator Using 0.15-µm GaN HEMT Technology
Jiayou Wang, Yin-Cheng Chang, Yeke Liu, Sih-Han Li, Da-Chiang Chang, Yi Huang, Shawn S.H. Hsu
National Tsing Hua Univ., NARLabs-TSRI, National Tsing Hua Univ., National Tsing Hua Univ., NARLabs-TSRI, University of Liverpool, National Tsing Hua Univ.
(09:20 - 09:40)
Peter Magnee
NXP Semiconductors
Julio Costa
GLOBALFOUNDRIES
Location
30C
Abstract

This session reports on recent advances in HBTs and HEMTs for microwave and mm-wave applications, covering InP, SiGe and GaN technologies. The state-of-the-art performance and reliability of HBT technology are addressed, as well as circuit examples. The noise behavior of InP HEMTs at cryogenic temperatures is discussed. Techniques for improving the performance of GaN HEMTs in next-generation power amplifiers are shown, including novel device designs and modeling.

Abstract
Tu1B-1: RF Reliability of SiGe and InP HBTs: A Comparative Study
Christoph Weimer, Markus Müller, Eren Vardarli, Martin Claus, Michael Schröter
Technische Universität Dresden, Technische Universität Dresden, Technische Universität Dresden, Infineon Technologies, Technische Universität Dresden
(08:00 - 08:20)
Abstract
Tu1B-2: Temperature and Process Calibration of HBT-Based Square-Law Power Detectors for Millimeter-Wave Built-In Self-Test
Yannick Wenger, Bernd Meinerzhagen, Vadim Issakov
Keysight Technologies, Technische Univ. Braunschweig, Technische Univ. Braunschweig
(08:20 - 08:40)
Abstract
Tu1B-3: Investigation of Drain Noise in InP pHEMTs Using Cryogenic On-Wafer Characterization
Bekari Gabritchidze, Kieran Cleary, Anthony Readhead, Austin J. Minnich
Caltech, Caltech, Caltech, Caltech
(08:40 - 08:50)
Abstract
Tu1B-4: Modeling and Measurement of Dual-Threshold N-Polar GaN HEMTS for High-Linearity RF Applications
Rohit R. Karnaty, Pawana Shrestha, Matthew Guidry, Brian Romanczyk, Umesh K. Mishra, James F. Buckwalter
University of California Santa Barbara, University of California Santa Barbara, University of California Santa Barbara, University of California Santa Barbara, University of California Santa Barbara, University of California Santa Barbara
(08:50 - 09:00)
Abstract
Tu1B-5: mm-Wave GaN-on-Si HEMTs with a PSAT of 3.9W/mm at 28GHz
Rana ElKashlan, Ahmad Khaled, Sachin Yadav, Hao Yu, Uthayasankaran Peralagu, AliReza Alian, Nadine Collaert, Piet Wambacq, Bertrand Parvais
IMEC, IMEC, IMEC, IMEC, IMEC, IMEC, IMEC, IMEC, IMEC
(09:00 - 09:10)
Abstract
Tu1B-6: Low-Voltage Operation AlInN/GaN HEMTs on Si with High Output Power at Sub-6GHz
Katsuhiko Takeuchi, Kunihiko Saruta, Shinya Morita, Katsuji Matsumoto, Masashi Yanagita, Satoshi Taniguchi, Shinichi Wada, Kunihiko Tasai, Masayuki Shimada, Katsunori Yanashima
Sony, Sony, Sony, Sony, Sony, Sony, Sony, Sony, Sony, Sony
(09:10 - 09:20)
Abstract
Tu1B-7: INDUSTRY KEYNOTE: InP HBT Technologies for Next Generation mmWave and THz Systems
M. Urteaga, Z. Griffith, A. Arias-Purdue, A. Carter, P. Rowell, J. Hacker, B. Brar
Teledyne Scientific & Imaging, Teledyne Scientific & Imaging, Teledyne Scientific & Imaging, Teledyne Scientific & Imaging, Teledyne Scientific & Imaging, Teledyne Scientific & Imaging, Teledyne Scientific & Imaging
(09:20 - 09:40)
Roee Ben-Yishay
Mobileye
Damla Dimlioglu
Cornell Univ.
Location
31AB
Abstract

This session is focused on the latest developments in CMOS low-noise amplifiers and receivers for wideband communication. The papers in the session cover frequency range from K-band to D-band. Furthermore, novel circuit techniques are reported to achieve low-noise performance and low power dissipation.

Abstract
Tu1D-1: A 115.7–139.7GHz Amplifier with 19.7dB Peak Gain and 7.9dB NF in 40-nm CMOS
Kyunghwan Kim, Jiwon Kang, Kangseop Lee, Seung-Uk Choi, Jiseul Kim, Ho-Jin Song
POSTECH, POSTECH, POSTECH, POSTECH, POSTECH, POSTECH
(08:00 - 08:20)
Abstract
Tu1D-2: Ku/K-Band Low Power Dual-Channel LNAs with Less Than 1.4dB NF for SATCOM Phased Array Applications
Mohammad Ghadiri-Sadrabadi, Himanshu Khatri, Chih-Hsiang Ko, Wei-Ting Wong, Umut Kodak, Tumay Kanar
Renesas Electronics, Renesas Electronics, Renesas Electronics, Renesas Electronics, Renesas Electronics, Renesas Electronics
(08:20 - 08:40)
Abstract
Tu1D-3: A Flip-Chip W-Band On-Off Keying Receiver in 90-nm CMOS
Hong-Shen Chen, Hong-Wei Wu, Yun-Ting Tseng, Jenny Yi-Chun Liu
National Tsing Hua Univ., National Tsing Hua Univ., National Tsing Hua Univ., National Tsing Hua Univ.
(08:40 - 09:00)
Abstract
Tu1D-4: A 74.8–88.8GHz Wideband CMOS LNA Achieving +4.73dBm OP1dB and 6.39dB Minimum NF
Linfeng Zou, Kangjie Zhao, Zonghua Fang, Leilei Huang, Boxiao Liu, Chunqi Shi, Guangsheng Chen, Jinghong Chen, Runxi Zhang
East China Normal Univ., East China Normal Univ., East China Normal Univ., East China Normal Univ., East China Normal Univ., East China Normal Univ., Shanghai Eastsoft Microelectronics, Univ. of Houston, East China Normal Univ.
(09:00 - 09:20)
Abstract
Tu1D-5: A 0.4-to-30 GHz CMOS Low-Noise Amplifier with Input-Referred Noise Reduction and Coupled-Inductive-Peaking Technique
Haitang Dong, Keping Wang, Geliang Yang, Shiyue Ma, Kaixue Ma
Tianjin Univ., Tianjin Univ., CETC54, Tianjin Univ., Tianjin Univ.
(09:20 - 09:40)

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Amit Jha
Qualcomm
Yi-Jan Emery Chen
National Taiwan Univ.
Location
31C
Abstract

This session presents various advanced techniques for frequency conversion and signal generation. The range of topics includes broadband mixer, frequency multiplier, MEMS-based oscillator, SEU-aware VCO, and EBG-based mm-wave oscillator using silicon-based technologies.

Abstract
Tu2E-1: A High LO-to-RF Isolation E-Band Mixer with 30GHz Instantaneous IF Bandwidth in 90nm CMOS
Wei-Chieh Ma, Chau-Ching Chiong, Yun-Shan Wang, Huei Wang
National Taiwan Univ., Academia Sinica, National Taiwan Univ., National Taiwan Univ.
(10:10 - 10:30)
Abstract
Tu2E-2: A Compact Multi-Channel CMOS Frequency Multiplier for Millimeter-Wave and Terahertz Signal Generation
Dong-Woo Kang
ETRI
(10:30 - 10:50)
Abstract
Tu2E-3: A 2.4-GHz MEMS-Based Oscillator with Phase Noise of -138dBc/Hz at 100kHz Offset and 226dBc/Hz FoM
Shiyue Ma, Keping Wang, Menglun Zhang, Kaixue Ma
Tianjin Univ., Tianjin Univ., Tianjin Univ., Tianjin Univ.
(10:50 - 11:10)
Abstract
Tu2E-4: A Comparison of 25GHz-LC-VCO Circuit Topologies for SEU Mitigation in 22nm FinFET
David Dolt, Inhyun Kim, Samuel Palermo
Texas A&M Univ., Texas A&M Univ., Texas A&M Univ.
(11:10 - 11:30)
Abstract
Tu2E-5: Novel mm-Wave Oscillator Based on an Electromagnetic Bandgap Resonator
Enrico Lia, Indra Ghosh, Stephen Hanham, Benjamin Walter, Fuanki Bavedila, Marc Faucher, Andrew Gregory, Leif Jensen, Jan Buchholz, Horst Fischer, Ulrich Altmann, Rüdiger Follmann
European Space Agency, IMST GmbH, Univ. of Birmingham, Vmicro SAS, Vmicro SAS, Institut d'électronique de microélectronique et de nanotechnologie, National Physical Laboratory, Topsil GlobalWafers A/S, IMST GmbH, IMST GmbH, IMST GmbH, IMST GmbH
(11:30 - 11:50)
Shirin Montazeri
Google
Kevin Kobayashi
Qorvo
Location
31AB
Abstract

Latest developments in InP, GaAs, MHEMT and SOI low-noise amplifiers and receivers. A Keynote presentation on InP HEMT technology will be followed by talks on low noise amplifiers and receiver for broadband communications and cryogenic applications.

Abstract
Tu2D-1: INDUSTRY KEYNOTE: Advances in InP HEMT Low Noise Amplifier Technology
William R. Deal
Northrop Grumman
(10:10 - 10:30)
Abstract
Tu2D-2: A Monolithic 0.8-to-18GHz Ultra-Wideband Reconfigurable Dual-Mode Transceiver Front-End in 0.15µm GaAs Technology
Shu Ma, Tingbo Yao, Zhenyu Wang, Xinyan Li, Manjian Chen, Fuchen Yan, Kang Peng, Huikun Zeng, Tao Yang, Huaizong Shao, Yong Wang
UESTC, CETC 29, UESTC, UESTC, UESTC, UESTC, UESTC, UESTC, UESTC, UESTC, UESTC
(10:30 - 10:50)
Abstract
Tu2D-3: A Cryogenic Four-Channel C-Band Low-Noise Amplifier MMIC in 50-nm Metamorphic High-Electron-Mobility-Transistor Technology
Felix Heinz, Fabian Thome, Arnulf Leuther
Fraunhofer IAF, Fraunhofer IAF, Fraunhofer IAF
(10:50 - 11:10)
Abstract
Tu2D-4: A 2.5-to-18GHz Reconfigurable LNA with 1.38-to-1.97dB NF Using Switchable Diplexer and Low-Noise Oriented Input
Zhenyu Wang, Manjian Chen, Xinyu Li, Xiaochen Tang, Xiang Li, Yong Wang
UESTC, UESTC, UESTC, New Mexico State Univ., Nanhu Laboratory, UESTC
(11:10 - 11:30)
Abstract
Tu2D-5: A Low Power V-Band LNA with Wide Supply Voltage Range Exploiting Complementary Current Reuse and Power Efficient Bias Point
Jesse Moody, Stefan Lepkowski, Travis M. Forbes
Sandia National Laboratories, Sandia National Laboratories, Sandia National Laboratories
(11:30 - 11:50)

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Christian Carlowitz
FAU Erlangen-Nürnberg, Germany
Manjunath Kareppagoudr
AMD
Location
31C
Abstract

This session covers advanced mixed-signal circuits and systems for frequency generation and high data-rate digital modulation. The session begins with an industry keynote on the design of low-jitter PLLs for 5G systems. The next three presentations address frequency generation circuits and systems including a 77GHz OFDM radar digital carrier synthesizer, a 142GHz prescaler and a 10GHz low-noise PFD. The session ends with a 120GBd optical Mach-Zehnder modulator driver and a 21Gbps PMCW radar PRBS generator.

Abstract
Tu3E-1: INDUSTRY KEYNOTE: Low Jitter Frequency Generation for 5G mm-Wave Cellular Applications
Wanghua Wu
Samsung
(13:30 - 13:50)
Abstract
Tu3E-2: An All-Digital Carrier Synthesis for Stepped OFDM Radars
David Werbunat, Benedikt Schweizer, Matthias Maier, Christina Bonfert, Daniel Schindler, Philipp Hinz, Jürgen Hasch, Christian Waldschmidt
Universität Ulm, Universität Ulm, Universität Ulm, Universität Ulm, Robert Bosch, Universität Ulm, Robert Bosch, Universität Ulm
(13:50 - 14:10)
Abstract
Tu3E-3: A 142 GHz 4/5 Dual-Modulus Prescaler for Wideband and Low Noise Frequency Synthesizers in 130 nm SiGe:C BiCMOS
Lukas Polzin, Marcel van Delden, Nils Pohl, Holger Rücker, Thomas Musch
Ruhr Univ. Bochum, Ruhr Univ. Bochum, Ruhr Univ. Bochum, IHP Microelectronics, Ruhr Univ. Bochum
(14:10 - 14:30)
Abstract
Tu3E-4: A Fast and Highly-Linear Phase-Frequency Detector with Low Noise for Fractional Phase-Locked Loops
Marcel van Delden, Lukas Polzin, Bent Walther, Nils Pohl, Klaus Aufinger, Thomas Musch
Ruhr-Universität Bochum, Ruhr-Universität Bochum, Ruhr-Universität Bochum, Ruhr-Universität Bochum, Infineon Technologies, Ruhr-Universität Bochum
(14:30 - 14:40)
Abstract
Tu3E-5: 120 GBd 2.8 Vpp,diff low-power differential driver for InP Mach-Zehnder modulator using 55 nm SiGe HBTs
Jung Han Choi, Nisarg Nijanandi
Fraunhofer Heinrich Hertz Institute, Fraunhofer Heinrich Hertz Institute
(14:40 - 15:00)
Abstract
Tu3E-6: A 21Gb/s Arbitrary Binary Sequence Generator for PMCW Radar Based on a TSPC Serializer in 22nm FDSOI
Florian Probst, Andre Engelmann, Vadim Issakov, Robert Weigel
FAU Erlangen-Nürnberg, FAU Erlangen-Nürnberg, Technische Univ. Braunschweig, FAU Erlangen-Nürnberg
(15:00 - 15:10)
Vittorio Camarchia
Politecnico di Torino
Ali M. Darwish
Army Research Laboratory
Location
31AB
Abstract

The session presents new techniques and state-of-the-art examples of power amplifiers enhancing linearity, efficiency, and load modulation as well as dual-band class highly efficient switched amplifiers.

Abstract
Tu3D-1: Performance Modeling and Shaping Function Extraction for Dual-Input Load Modulated Power Amplifiers
Wantao Li, Aleksander Bogusz, Jonathan Lees, Roberto Quaglia, Steve Cripps, Gabriel Montoro, Pere L. Gilabert
Univ. Politècnica de Catalunya, Cardiff University, Cardiff University, Cardiff University, Cardiff University, Univ. Politècnica de Catalunya, Univ. Politècnica de Catalunya
(13:30 - 13:50)
Abstract
Tu3D-2: A Differential Amplifier with Enhanced Linearity of Average Power Region Using Dynamic Cross-Coupled Capacitor for 5G NR-U
Sungwoon Hwang, Jooyoung Jeon, Sooji Bae, Byeongcheol Yoon, Junghyun Kim
Hanyang Univ., Gangneung-Wonju National University, Hanyang Univ., Hanyang Univ., Hanyang Univ.
(13:50 - 14:10)
Abstract
Tu3D-3: PA Output Power and Efficiency Enhancement Across the 2:1 VSWR Circle Using Static Active Load Adjustment
Gagan Deep Singh, Hossein Mashad Nemati, Morteza S. Alavi, Leo C.N. de Vreede
Technische Universiteit Delft, Huawei Technologies, Technische Universiteit Delft, Technische Universiteit Delft
(14:10 - 14:30)
Abstract
Tu3D-4: Load Modulated Balanced Amplifier Design for Handset Applications
Kiichiro Takenaka, Yuuma Noguchi, Satoshi Arayashiki, Takaya Wada
Murata Manufacturing Co., Ltd., Murata Manufacturing Co., Ltd., Murata Manufacturing Co., Ltd., Murata Manufacturing Co., Ltd.
(14:30 - 14:50)
Abstract
Tu3D-5: Design of Highly-Efficient Dual-Band GaN HEMT Power Amplifier with Dual-Class E/F-1 Operation
Dang-An Nguyen, Gia Thang Bui, Chulhun Seo
Soongsil Univ., Soongsil Univ., Soongsil Univ.
(14:50 - 15:00)
Najme Ebrahimi
Univ. of Florida
Kenneth Mays
Boeing
Location
30DE
Abstract

This session contains 5 valued papers from academia and industry, starting from a high data-rate communication Ka-band mm-wave phased array using 28nm technology and a compact Ka-band eight-element receiver for low-earth orbit satellite communication applications. The session will then present a phase shifter for 5G applications at 28GHz band with low RMS phase error. It also contains a K-band low-power FMCW radar for IoT application. The session ends with a 28GHz phased array with 24GHz wireless power transfer block using on-chip Butler matrix.

Abstract
Tu3C-1: INDUSTRY KEYNOTE: Millimeter Wave Circuits for Phased Array Communication Systems in 28nm CMOS Technology
Fabio Padovan
Infineon Technologies
(13:30 - 13:50)
Abstract
Tu3C-2: A Compact Ka-Band Eight-Element Four-Beam Receiver for Low-Earth-Orbit Satellite Communications in 65-nm CMOS
Yuexiaozhou Yuan, Nayu Li, Jingying Zhou, Huiyan Gao, Shaogang Wang, Hang Lu, Qun Jane Gu, Chunyi Song, Zhiwei Xu
Zhejiang Univ., Zhejiang Univ., Zhejiang Univ., Zhejiang Univ., Zhejiang Univ., Zhejiang Univ., Univ. of California, Davis, Zhejiang Univ., Zhejiang Univ.
(13:50 - 14:10)
Abstract
Tu3C-3: A CMOS Low Power K-Band FMCW Radar Transceiver Front-End for AIOT Application
Shuoyang Yuan, Shengjie Wang, Jiangbo Chen, Jiabing Liu, Quanyong Li, Qizhou Yang, Qun Jane Gu, Chunyi Song, Zhiwei Xu
Zhejiang Univ., Zhejiang Univ., Zhejiang Univ., Zhejiang Univ., Zhejiang Univ., Zhejiang Univ., Univ. of California, Davis, Zhejiang Univ., Zhejiang Univ.
(14:10 - 14:30)
Abstract
Tu3C-4: A 26–32GHz 6-Bit Bidirectional Passive Phase Shifter with 14dBm IP1dB and 2.6° RMS Phase Error for Phased Array System in 40nm CMOS
Yechen Tian, Junjie Gu, Hao Xu, Weitian Liu, Zongming Duan, Hao Gao, Na Yan
Fudan Univ., Fudan Univ., Fudan Univ., Fudan Univ., ECRIEE, Technische Universiteit Eindhoven, Fudan Univ.
(14:30 - 14:50)
Abstract
Tu3C-5: Beam Control Free 28GHz 5G Relay Transceiver and 24GHz Wireless Power Receiver Using On-Chip Butler Matrix
Keito Yuasa, Michihiro Ide, Sena Kato, Kenichi Okada, Atsushi Shirane
Tokyo Tech, Tokyo Tech, Tokyo Tech, Tokyo Tech, Tokyo Tech
(14:50 - 15:10)

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Varish Diddi
Qualcomm
Pere L. Gilabert
Univ. Politècnica de Catalunya
Location
31AB
Abstract

Advanced linearization techinques for power amplifier and wideband transmitters will be presented. Paper topics include: linearization of MIMO transmitters, FPGA implementation of dual-input digital predistorters, low-complexity DPD for handsets and DPD for linear phased arrays.

Abstract
Tu4D-1: On the Viability of Using a Subset of Transmitter-Observation Receivers for Training a Common DPD in Fully Digital MIMO Transmitters
Jin Gyu Lim, Hoda Barkhordar-pour, Ahmed Ben Ayed, Patrick Mitran, Slim Boumaiza
Univ. of Waterloo, Univ. of Waterloo, Univ. of Waterloo, Univ. of Waterloo, Univ. of Waterloo
(15:40 - 16:00)
Abstract
Tu4D-2: Real-Time FPGA-Based Implementation of Digital Predistorters for Fully Digital MIMO Transmitters
Hoda Barkhordar-pour, Jin Gyu Lim, Mohammed Almoneer, Patrick Mitran, Slim Boumaiza
Univ. of Waterloo, Univ. of Waterloo, Univ. of Waterloo, Univ. of Waterloo, Univ. of Waterloo
(16:00 - 16:20)
Abstract
Tu4D-3: Widen Linearization Angle of Beamforming Arrays with Semi-Partitioned Digital Predistortion
Qing Luo, Anding Zhu
Univ. College Dublin, Univ. College Dublin
(16:20 - 16:40)
Abstract
Tu4D-4: New Digital Predistortion Training Method with Cross-Polarization Channel De-Embedding for Linearizing Dual-Polarized Arrays Using Far-Field Observation Receiver
Nizar Messaoudi, Ahmed Ben Ayed, Ziran He, Bernard Tung, Patrick Mitran, Slim Boumaiza
Univ. of Waterloo, Univ. of Waterloo, Univ. of Waterloo, Univ. of Waterloo, Univ. of Waterloo, Univ. of Waterloo
(16:40 - 17:00)
Abstract
Tu4D-5: Incremental DPD Linearization for Mobile Terminals with Non-Flat Frequency Response in Dynamic Bandwidth Re-Allocation Scenarios
Wantao Li, Yan Guo, Gabriel Montoro, Pere L. Gilabert
Univ. Politècnica de Catalunya, Huawei HiSilicon, Univ. Politècnica de Catalunya, Univ. Politècnica de Catalunya
(17:00 - 17:20)

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Peter Asbeck
Univ. of California, San Diego
Sushil Kumar
National Instruments
Location
25ABC
Abstract

This session describes advances in GaN PAs for broadband applications and for high-frequency applications up to Ka-band. To increase bandwidth over the range 9.5–16.5GHz, covering the emerging FR3 wireless band, a novel L-C match with characteristics equivalent to those of a transformer is reported. Another amplifier covers the range 1.5 to 17GHz by separating the band into three frequency ranges, which can be selected by choosing the proper input and output bias networks. To address gain, efficiency and linearity for 5G FR2 (26–28GHz) operation, a balanced GaN stacked FET amplifier and a 3-way Doherty PA are demonstrated.

Abstract
We1C-1: A 2W 9.5–16.5GHz GaN Power Amplifier with 30% PAE Using Transformer-Based Output Matching Network
Xiao Sun, Xu Zhu, Yong Wang, Pei-Ling Chi, Tao Yang
UESTC, UESTC, UESTC, UESTC, UESTC
(08:00 - 08:20)
Abstract
We1C-2: A 1.5-to-17GHz Non-Uniform Distributed Power Amplifier Using Reconfigurable Modules in 0.25µm GaN HEMT
Shijie Chen, Fuchen Yan, Yuan Liang, Shu Ma, Dexin Shi, Xiang Li, Huaizong Shao, Tao Yang, Yong Wang
UESTC, UESTC, Guangzhou University, UESTC, UESTC, Nanhu Laboratory, UESTC, UESTC, UESTC
(08:20 - 08:40)
Abstract
We1C-3: A 3-Way GaN Doherty Power Amplifier for 28GHz 5G FR2 Operation
Anna Piacibello, Rocco Giofrè, Paolo Colantonio, Vittorio Camarchia
Politecnico di Torino, Università di Roma “Tor Vergata”, Università di Roma “Tor Vergata”, Politecnico di Torino
(08:40 - 09:00)
Abstract
We1C-4: A Balanced Stacked GaN MMIC Power Amplifier for 26-GHz 5G Applications
Anna Piacibello, Chiara Ramella, Vittorio Camarchia, Marco Pirola
Politecnico di Torino, Politecnico di Torino, Politecnico di Torino, Politecnico di Torino
(09:00 - 09:20)

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Taylor Barton
University of Colorado Boulder
Paolo de Falco
Qualcomm
Location
25ABC
Abstract

This session presents a variety of load-modulated power amplifiers in GaN, including Doherty and Load-Modulated Balanced Amplifier (LMBA), targeting high-power techniques. Methods of extending bandwidth and output power dynamic range will be discussed in both hybrid and MMIC implementations.

Abstract
We2C-1: Compact 40% Fractional Bandwidth Doherty PA with Input Group Delay Engineering
Manuel Cavarroc, Anthony Lamy, Olivier Lembeye, Roy McLaren, Claude Duvanaud, Smail Bachir
NXP Semiconductors, NXP Semiconductors, NXP Semiconductors, NXP Semiconductors, XLIM - CNRS, XLIM - CNRS
(10:10 - 10:30)
Abstract
We2C-2: Continuous Quasi-Load Insensitive Class-E Mode for Wideband Doherty Power Amplifiers
Xuan Anh Nghiem, John Gajadharsing
Ampleon, Ampleon
(10:30 - 10:50)
Abstract
We2C-3: Bandwidth Extension of a Doherty Power Amplifier Through Reduction of Packaging-Related Parasitic Effects
Ioannis Peppas, Hiroaki Takahashi, Sebastian Sattler, Markus Kastelic, Erich Schlaffer, Helmut Paulitsch, Wolfgang Bösch
Technische Universität Graz, Technische Universität Graz, Infineon Technologies, AT&S, AT&S, Technische Universität Graz, Technische Universität Graz
(10:50 - 11:10)
Abstract
We2C-4: A 6-/12-dB Back-Off Multi-Mode GaN MMIC Doherty Power Amplifier for 5G Applications
Hansik Oh, Woojin Choi, Jaekyung Shin, Yifei Chen, Hyunuk Kang, Young Yun Woo, Youngoo Yang
Samsung, Sungkyunkwan Univ., Sungkyunkwan Univ., Sungkyunkwan Univ., Samsung, Samsung, Sungkyunkwan Univ.
(11:10 - 11:30)
Abstract
We2C-5: Reconfigurable Hybrid Asymmetrical Load Modulated Balanced Amplifier with High Linearity, Wide Bandwidth, and Load Insensitivity
Jiachen Guo, Kenle Chen
Univ. of Central Florida, Univ. of Central Florida
(11:30 - 11:50)

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Debabani Choudhury
Intel
Wooram Lee
Penn State University
Location
24ABC
Abstract

This session begins with an industry keynote on microwave photonics, followed by a plasmonic based imager. Next a kinetic inductance detector is presented, and then a THz detector in 16nm FinFET. The session concludes with a comb-based integrated photonics mm-wave transmission.

Abstract
We3B-1: INDUSTRY KEYNOTE: Microwave Photonics and Quantum Applications
Lute Maleki
OEwaves Inc.
(13:30 - 13:50)
Abstract
We3B-2: 16 Frames-per-Second Terahertz Time-Domain Imaging Through a Plasmonic Photoconductive Focal-Plane Array
Xurong Li, Deniz Mengu, Aydogan Ozcan, Mona Jarrahi
Univ. of California, Los Angeles, Univ. of California, Los Angeles, Univ. of California, Los Angeles, Univ. of California, Los Angeles
(13:50 - 14:10)
Abstract
We3B-3: Development of W-Band Dual-Polarization Kinetic Inductance Detectors on Silicon
Marina C. de Ory, David Rodriguez, Luisa de la Fuente, Beatriz Aja, Enrique Villa, Daniel Bordner, Juan P. Pascual, Daniel Granados, Eduardo Artal, Alicia Gomez
Centro de Astrobiología, Centro de Astrobiología, Universidad de Cantabria, Universidad de Cantabria, Centro de Astrobiología, Universidad de Cantabria, Universidad de Cantabria, IMDEA Nanociencia, Universidad de Cantabria, Centro de Astrobiología
(14:10 - 14:30)
Abstract
We3B-4: Antenna-Coupled Terahertz Detectors in 16nm FinFET
Christopher Chen, Richard Al Hadi, Mau-Chung Frank Chang
Univ. of California, Los Angeles, Univ. of California, Los Angeles, Univ. of California, Los Angeles
(14:30 - 14:50)
Abstract
We3B-5: Experimental Demonstration of Multi-Band Comb-Enabled mm-Wave Transmission
Dhecha Nopchinda, Zichuan Zhou, Zhixin Liu, Izzat Darwazeh
Univ. College London, Univ. College London, Univ. College London, Univ. College London
(14:50 - 15:10)
Xinyu Zhou
Stanford Univ.
Tony G. Ivanov
Army Research Laboratory
Location
25ABC
Abstract

This session describes novel architectures for power amplifiers operating at >10W output power for both sub-6GHz and mm-wave frequencies. Techniques include exploiting nonlinear behaviors for efficiency or gain enhancement, and circuit realization both in spatial power-combining and packaging techniques.

Abstract
We3C-1: INDUSTRY KEYNOTE: High-Power (>5W) RF & Microwave Amplifiers, Below 30GHz
David W. Runton
Macom
(13:30 - 13:50)
Abstract
We3C-2: The Role of Nonlinear Cout in Continuous Class F PAs
Y. Mary Asha Latha, Luís C. Nunes, Filipe M. Barradas, José C. Pedro
Instituto de Telecomunicações, Instituto de Telecomunicações, Instituto de Telecomunicações, Instituto de Telecomunicações
(13:50 - 14:10)
Abstract
We3C-3: A GaN Gain Enhancement PA with Peak Power Combining
William Sear, Taylor Barton
University of Colorado Boulder, University of Colorado Boulder
(14:10 - 14:30)
Abstract
We3C-4: A 100W 2.15GHz RF Power Amplifier Device with Novel Matching Network
Eric M. Johnson, Vikas Shilimkar, Richard Sweeney
NXP Semiconductors, NXP Semiconductors, NXP Semiconductors
(14:30 - 14:50)
Abstract
We3C-5: A GaN-Based Solid State Power Amplifier for Satellite Communications
Rocco Giofrè, Lorena Cabria, Remy Leblanc, Mariano Lopez, Fabio Vitobello, Paolo Colantonio
Università di Roma “Tor Vergata”, TTI Norte, OMMIC, TTI Norte, European Commission, Università di Roma “Tor Vergata”
(14:50 - 15:10)

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Steven M. Bowers
Univ. of Virginia
William R. Deal
Northrop Grumman
Location
24ABC
Abstract

This session opens with a wideband THz fundamental mixer enabling data rates up to 168Gbps, and is followed by low-loss substrate-integrated D-band waveguide technology for 6G applications. After that, broadband THz switches based on photoconductivity modulation are presented. The session concludes with a metamaterial lens for beam-steering applications.

Abstract
We4B-1: 220-to-320-GHz Fundamental Mixer in 60-nm InP HEMT Technology Achieving 120/152/168-Gbps Data Transmission in Three Bands
Teruo Jyo, Hiroshi Hamada, Takuya Tsutsumi, Ibrahim Abdo, Satoshi Kawahara, Daisuke Kitayama, Munehiko Nagatani, Hiroyuki Takahashi
NTT, NTT DOCOMO, NTT, NTT, NTT, NTT, NTT, NTT
(15:40 - 16:00)
Abstract
We4B-2: Design and Characterization of Metalized Trench Based Waveguide Technology on Glass Interposer for 6G Applications
Xingchen Li, Xiaofan Jia, Serhat Erdogan, Matthew Jordan, Madhavan Swaminathan
Georgia Tech, Georgia Tech, Georgia Tech, Sandia National Laboratories, Georgia Tech
(16:00 - 16:20)
Abstract
We4B-3: Broadband THz Switching with Extremely Low Insertion Loss and Superior Isolation
Peizhao Li, Weifeng Wu, Yu Shi, Yijing Deng, Patrick Fay, Lei Liu
Univ. of Notre Dame, Univ. of Notre Dame, Univ. of Notre Dame, Univ. of Notre Dame, Univ. of Notre Dame, Univ. of Notre Dame
(16:20 - 16:40)
Abstract
We4B-4: A 3D Printed Terahertz Metamaterial Lens for Beam-Steering Applications
Jiexin Lai, Yang Yang
UTS, UTS
(16:40 - 17:00)
Paul J. Draxler
MaXentric Technologies
Ramon A. Beltran
Ophir RF
Location
25ABC
Abstract

The session will kick off with a review of HF through UHF power amplifier technology and applications, followed by presentations on power amplifiers using GaAs and GaN devices across the low end of the frequency spectrum.

Abstract
We4C-1: INDUSTRY KEYNOTE: RF Power at HF/VHF/UHF — Status and Trends
Richard Posner
Aethercomm
(15:40 - 16:00)
Abstract
We4C-2: Linearity Enhanced Broadband Darlington Power Amplifier IC Using InGaP/GaAs HBT for Handset Modules with Fractional Bandwidth of 50%
Sooji Bae, Jooyoung Jeon, Sungwoon Hwang, Byeongcheol Yoon, Junghyun Kim
Hanyang Univ., Gangneung-Wonju National University, Hanyang Univ., Hanyang Univ., Hanyang Univ.
(16:00 - 16:20)
Abstract
We4C-3: A 30–680-MHz GaAs pHEMT Power Amplifier with Guanella-Type Transformers Integrated on a Flexible Printed Circuit Board
Zixian Ma, Bing Lan, Wentao Zhou, Jun Chen, Zhaosheng Liu, Qun Jane Gu, Chunyi Song, Zhiwei Xu
Zhejiang Univ., Zhejiang Univ., Zhejiang Univ., Etra Semiconductor, Etra Semiconductor, Univ. of California, Davis, Zhejiang Univ., Zhejiang Univ.
(16:20 - 16:40)
Abstract
We4C-4: 200-W 13.56-MHz Class-E PA with Gate-Driver ICs
Frederick H. Raab
Green Mountain Radio Research
(16:40 - 17:00)

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Laya Mohammadi
Qualcomm
Zoya Popović
University of Colorado Boulder
Location
31AB
Abstract

Cost-effective Ka-band and above MMIC power amplifiers are presented in a variety of processes. GaN-on-SiC technology at Ka-W band is featured, along with a GaN MOS-HEMT process with GaN-on-Si in 300mm wafer diameter technology. Two Doherty SOI-CMOS PAs are presented and characterized while amplifying broadband signals.

Abstract
Th1G-1: A 25.5–31GHz Power Amplifier Using Enhancement-Mode High-K Dielectric GaN MOS-HEMTs in 300mm GaN-on-Si Technology
Qiang Yu, Han Wui Then, Ibukunoluwa Momson, Derek Thomson, Jeffrey Garrett, Said Rami
Intel, Intel, Intel, Intel, Intel, Intel
(08:00 - 08:20)
Abstract
Th1G-2: 37–43GHz Wide-Band Doherty Power Amplifier with Enhanced AM-PM Characteristic
Hang Yu, Mehran Hazer Sahlabadi, Emile Traore, Mahitab Eladwy, Haien Ma, Slim Boumaiza
Univ. of Waterloo, Univ. of Waterloo, Univ. of Waterloo, Univ. of Waterloo, Univ. of Waterloo, Univ. of Waterloo
(08:20 - 08:40)
Abstract
Th1G-3: A 24–31GHz 28nm FD-SOI CMOS 3:1 VSWR Resilient Inductive Hybrid Coupler-Based Doherty Power Amplifier
Gwennaël Diverrez, Eric Kerhervé, Magali De Matos, Andreia Cathelin
IMS (UMR 5218), IMS (UMR 5218), IMS (UMR 5218), STMicroelectronics
(08:40 - 09:00)
Abstract
Th1G-4: INDUSTRY KEYNOTE: Highly-Linear and Efficient mm-Wave GaN MMICs: Challenges in Model and Validation
Jeong-sun Moon
HRL Laboratories
(09:00 - 09:20)

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David Brown
BAE Systems
Munkyo Seo
Sungkyunkwan Univ.
Location
31AB
Abstract

mm-Wave MMIC amplifiers, including LNAs and PAs, are presented up to 300GHz in GaN, GaAs and InP technologies. Powers up to 4W are demonstrated in GaN with high efficiency, while state-of-the-art gain-bandwidth products are shown in both PAs and LNAs in an InGaAs mHEMT process. Multi-stage InB HBT power amplifier MMICs demonstrate high efficiency and power at D and H bands.

Abstract
Th2G-1: Millimeter-Wave LNA and PA MMICs with 10:1 and 4:1 Bandwidth in a 35-nm Gate-Length InGaAs mHEMT Technology
Fabian Thome, Hermann Massler, Arnulf Leuther, Sébastien Chartier
Fraunhofer IAF, Fraunhofer IAF, Fraunhofer IAF, Fraunhofer IAF
(10:10 - 10:30)
Abstract
Th2G-2: A Multi-Stage 19.2-dBm, 30.4%-PAE D-Band Power Amplifier in a 250-nm InP HBT Process
Eythan Lam, Kang Ning, Ahmed S.H. Ahmed, Mark Rodwell, James F. Buckwalter
Univ. of California, Santa Barbara, Univ. of California, Santa Barbara, Univ. of California, Santa Barbara, Univ. of California, Santa Barbara, Univ. of California, Santa Barbara
(10:30 - 10:50)
Abstract
Th2G-3: H-Band Differential Cascode Power Amplifier Achieving 9.5-dBm OP1dB at 260GHz in 250-nm InP DHBT Process
Chan-Gyu Choi, Jiseul Kim, Kyunghwan Kim, Ho-Jin Song
POSTECH, POSTECH, POSTECH, POSTECH
(10:50 - 11:10)
Abstract
Th2G-4: A 2.6W and a 4W Output Power E-band GaN Power Amplifier with a Peak Efficiency of 22% and 15.3%
Bharath kumar Cimbili, Christian Friesicke, Friedbert van Raay, Sandrine Wagner, Mingquan Bao, Ruediger Quay
Fraunhofer Institute for Applied Solid State Physi, Fraunhofer Institute for Applied Solid State Physics, Fraunhofer Institute for Applied Solid State Physics, Fraunhofer Institute for Applied Solid State Physics, Ericsson, Fraunhofer Institute for Applied Solid State Physics
(11:10 - 11:30)