Active Devices

This session focuses on recent advances in Doherty power amplifiers. This load modulation technology is pushed to higher frequencies above 7GHz, higher output power, extended power back-off range, and unprecedented instantaneous bandwidth for emerging wireless infrastructure.

This session includes several transmit components with over 10W of output power, including a decade-bandwidth 0.2–2GHz load-modulated balanced amplifier, several integrated Doherty PA modules and an E-mode dual-gate SPDT switch.

This session contains 5 papers on analog predistortion focusing on very high frequency, MIMO systems, and circuit techniques including phase-cancellation, Doherty and Darlington power amplifier architectures.

This session features the latest developments in the production of RF power at frequencies up to 1GHz. The session begins with a survey of transistors for production of 1kW or more of RF power. Next the session addresses operation over wide bandwidths with both ferrite-loaded baluns and continuous-mode operation of an amplifier. Techniques for driving switching-mode power amplifiers and for directly interfacing high-efficiency amplifiers to antennas are described. Finally, the session includes a comparison of EER and Doherty techniques for high-efficiency operation at VHF.

This session consists of 5 papers including the keynote paper "Efficiency Enhancements using Digital Predistortion and Advanced Transmitters". The remaining 4 papers address the challenges of linearization in emerging phased array systems, novel machine learning and DSP solutions to improve radio performance.

This session presents advanced frequency converters and modulators using silicon-based and III-V semiconductor technologies. The wide range of topics including frequency multiplication, frequency mixing, and I/Q modulators will be discussed.

This session presents power amplifiers in GaN and GaAs MMIC technologies. These topics cover continuous mode techniques with active and passive harmonic control.

This session presents advanced RF/mm-wave frequency multiplication techniques from Ku- to Y-band using a variety of technologies including CMOS, FDSOI, SiGe, and InP.

This session focuses on several papers on high-efficiency power amplifier design techniques in GaAs HBT, CMOS, SOI and EDMOS technologies for 6G FR3 handset and MIMO radar applications.

This session presents low-phase noise signal generation from X- to D-band using a variety of technologies including bulk CMOS, FDSOI, GaAs, and FinFET.

This session focuses on advances in power amplifiers using load-modulation architectures to improve efficiency at back-off power levels, as needed in most modulation formats today. Papers cover work at frequencies between 2GHz and 30GHz, and technologies including CMOS-SOI, GaAs HBT, Gas pHEMT and GaN.

This session will showcase state-of-the-art MMIC performance at frequency bands covering E-band (74, 84GHz) through D-band (110–170GHz). MMIC technologies ranging from state-of-the-art 100nm GaN-on-SiC, commercial GaAs PHEMT, and 40nm bulk CMOS processes are presented. These results represent new benchmark performance results for these technologies and showcase high-performance on-chip power combining techniques and these amplifiers are applicable to a range of RF applications including E-band wireless backhaul, 6G communications, D-band radar and imaging, satellite communications, and defense electronics.

The session focusses on advanced compound semiconductor integrated circuits for broadband and phased array applications. The session will kick-off with an invited talk on the advances in mm-wave and THz amplifier technology and design. Advanced PA, DPD, linearization, and power combining techniques will be described as well as a highly-integrated 300GHz active phased array.

This session presents novel receiver front-end designs, showcasing innovations in LNAs, phase shifters, and broadband receivers.

This session discusses deep-levels and high field-effects in GaN devices including HEMTs and IMPATT diodes. Additional topics include performance implications of gate insulator and metallization design. The session concludes with the characterization of substrates down to cryogenic temperatures.

This session is focused on the latest developments in integrated low-noise amplifiers for wideband communication. The papers in the session cover the frequency range from C-Band to D-Band. Furthermore, novel circuit techniques are reported to achieve low-noise performance and low power dissipation.