Join us before the IMS Plenary Session for the Industry Showcase where selected IMS paper authors will present their work.
Th2F: 2300-GHz-Band InP HBT Power Amplifier Module Enabling 280-Gbps 0-dBm Signal Generation with Digital Predistortion
Teruo Jyo, NTT Corporation
We3C-1: A Highly Linear 4W Differential SOI-CMOS RF Switch
Ting-Li Hsu, Tech. Univ. of Munich
We2E-5: High-Power Handling, Amplitude and Phase stable, Full Band WR-06 Rotary Joint Based on TE01 Mode
Alex H Chen, Eravant
Th1B-2: A Low-Loss, Wideband, 0-110 GHz SPDT Using PCM RF Switches with Integrated CMOS Drivers
Nabil El-Hinnawy, Tower Semiconductor
We2H-2: A High-Efficiency GaAs HBT Power Amplifier for 6G FR3 Applications
Jung-Tao Chung, National Taiwan Univ.
Tu2D-2: An Integrated Doherty Power Amplifier Module Based on an Advanced GaN-on-Si HEMT Technology and a Wideband Power Combiner
Ioannis Peppas, Graz Univ. of Technology
Tu3E-1: Experimental Demonstration of E-Band Tunable Analog Predistortion
Dhecha Nopchinda, Gotmic AB
Th1G-2: DC-to-89-GHz AMUX-based IQ Modulator in 250-nm InP HBT Technology for Multiplexing-DAC Subsystem
Munehiko Nagatani, NTT Corporation
Tu3B-1: 150GHz-Band Compact Phased-Array AiP Module for XR Applications toward 6G
Yohei Morishita, Panasonic Industry Co., Ltd.
Tu2E-4: Recurrent Neural Network Modeling of Radio Frequency Amplifiers for System-Level Simulation and Design
Alan Preciado-Grijalva, Epirus, Inc.
Tu1E-2: Modeling Josephson traveling-wave parametric amplifiers with electromagnetic and circuit cosimulation
Likai Yang, Keysight Technologies
Th1D-5: A Novel Q-Choked Sapphire Sandwiched Resonator for Wide-Band Measurements of Flat Dielectric Samples
Malgorzata Celuch, QWED Sp. zoo.