WMQ: MHz-to-THz Measurement Techniques for Advancing RF GaN HEMTs

Presentation Abstract
Gallium nitride (GaN) high electron mobility transistors (HEMTs) continue to play a critical role in numerous RF applications including communications, satellite communications, radar, and electronic warfare. The GaN technology development cycle has always been critically reliant on measurements to characterize the transistors and provide precise data for device process engineers, modeling engineers, as well as for circuit and system designers. New variants of GaN HEMTs, often designed for specific applications, will continue to require both established and advanced measurement techniques — particularly tests that characterize the transistor in application-like environments. It is, therefore, critical to understand the landscape in terms of microwave measurements specific to characterizing GaN HEMT technologies for their use cases. This half-day workshop will assemble an international group of experts in the field of advanced RF measurements to present the latest research from MHz to THz techniques. This proposed workshop will enable an inclusive, international audience and will welcome open discussions on the technical aspects of the presentations.