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  Tue 17 Jun | 10:10 - 11:50
            211
      High-Power GaN Transmit Components
      
             This session includes several transmit components with over 10W of output power, including a decade-bandwidth 0.2–2GHz load-modulated balanced amplifier, several integrated Doherty PA modules and an E-mode dual-gate SPDT switch.
      
10:10 - 10:30
Tu2D-1 RF-Input Doherty-Like Load-Modulated Balanced Amplifier with Decade Bandwidth Enabled by Novel Broadband 180-Degree Power Divider
10:30 - 10:50
Tu2D-2 An Integrated Doherty Power Amplifier Module Based on an Advanced GaN-on-Si HEMT Technology and a Wideband Power Combiner
10:50 - 11:10
Tu2D-3 System-in-Package Doherty Power Amplifier Using Hybrid LDMOS/GaN Line-Up for 5G Macro Driver Applications
11:10 - 11:30
Tu2D-4 10 Watt CW Power Handling SPDT RF Switch Using E-Mode p-GaN Dual-Gate HEMT Technology
