Tu2D: High-Power GaN Transmit Components

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Tue 17 Jun | 10:10 - 11:50
211
High-Power GaN Transmit Components
Charles F. Campbell
Qorvo
Anna Piacibello
Politecnico di Torino
This session includes several transmit components with over 10W of output power, including a decade-bandwidth 0.2–2GHz load-modulated balanced amplifier, several integrated Doherty PA modules and an E-mode dual-gate SPDT switch.
10:10 - 10:30
Tu2D-1 RF-Input Doherty-Like Load-Modulated Balanced Amplifier with Decade Bandwidth Enabled by Novel Broadband 180-Degree Power Divider
ABSTRACT
Pingzhu Gong, Niteesh Bharadwaj Vangipurapu, Jiachen Guo, Kenle Chen
Univ. of Central Florida, Univ. of Central Florida, Univ. of Central Florida, Univ. of Central Florida
10:30 - 10:50
Tu2D-2 An Integrated Doherty Power Amplifier Module Based on an Advanced GaN-on-Si HEMT Technology and a Wideband Power Combiner
ABSTRACT
Mustazar Iqbal, Ioannis Peppas, Marco Pitton, Peter Singerl
Infineon Technologies, Technische Universität Graz, Infineon Technologies, Infineon Technologies
10:50 - 11:10
Tu2D-3 System-in-Package Doherty Power Amplifier Using Hybrid LDMOS/GaN Line-Up for 5G Macro Driver Applications
ABSTRACT
Alexis Courty, Kaisseh Houssein, Walid Rili, Christophe Quindroit, Mariano Ercoli, Stephan Maroldt
Ampleon, Ampleon, Ampleon, Ampleon, Ampleon, Ampleon
11:10 - 11:30
Tu2D-4 10 Watt CW Power Handling SPDT RF Switch Using E-Mode p-GaN Dual-Gate HEMT Technology
ABSTRACT
Hsien-Chin Chiu, Chia-Han Lin, Chia-Hao Yu, Chong-Rong Huang, Hsuan-Ling Kao, Hsiang-Chun Wang, Po-Tsung Tu, Barry Lin
Chang Gung Univ., Chang Gung Univ., Chang Gung Univ., Chang Gung Univ., Chang Gung Univ., ITRI, ITRI, Wavetek Microelectronics
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