Tu2D: High-Power GaN Transmit Components

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Tue 17 Jun | 10:10 - 11:50
211
High-Power GaN Transmit Components
Charles F. Campbell
Qorvo
Anna Piacibello
Politecnico di Torino
This session includes several transmit components with over 10W of output power, including a decade-bandwidth 0.2–2GHz load-modulated balanced amplifier, several integrated Doherty PA modules and an E-mode dual-gate SPDT switch.
10:10 - 10:30
Tu2D-1 RF-Input Doherty-Like Load-Modulated Balanced Amplifier with Decade Bandwidth Enabled by Novel Broadband 180-Degree Power Divider
ABSTRACT
Pingzhu Gong, Niteesh Bharadwaj Vangipurapu, Jiachen Guo, Kenle Chen
Univ. of Central Florida, Univ. of Central Florida, Univ. of Central Florida, Univ. of Central Florida
10:30 - 10:50
Tu2D-2 An Integrated Doherty Power Amplifier Module Based on an Advanced GaN-on-Si HEMT Technology and a Wideband Power Combiner
ABSTRACT
Mustazar Iqbal, Ioannis Peppas, Marco Pitton, Peter Singerl
Infineon Technologies, Technische Universität Graz, Infineon Technologies, Infineon Technologies
10:50 - 11:10
Tu2D-3 System-in-Package Doherty Power Amplifier Using Hybrid LDMOS/GaN Line-Up for 5G Macro Driver Applications
ABSTRACT
Alexis Courty, Kaisseh Houssein, Walid Rili, Christophe Quindroit, Mariano Ercoli, Stephan Maroldt
Ampleon, Ampleon, Ampleon, Ampleon, Ampleon, Ampleon
11:10 - 11:30
Tu2D-4 10 Watt CW Power Handling SPDT RF Switch Using E-Mode p-GaN Dual-Gate HEMT Technology
ABSTRACT
Hsien-Chin Chiu, Chia-Han Lin, Chia-Hao Yu, Chong-Rong Huang, Hsuan-Ling Kao, Hsiang-Chun Wang, Po-Tsung Tu, Barry Lin
Chang Gung Univ., Chang Gung Univ., Chang Gung Univ., Chang Gung Univ., Chang Gung Univ., ITRI, ITRI, Wavetek Microelectronics
Charles F. Campbell
Qorvo
Anna Piacibello
Politecnico di Torino