TUMA20: Improvement of Noise Figure for LNAs with New Gate Structure

Presentation Abstract
LNAs (Low Noise Amplifiers) are used to improve receive sensitivity and error rate, issues that are related to NF (Noise Figure). To improve NF, Nisshinbo has been working to shorten the FET gate length (Lg) for LNAs produced in our in-house GaAs Fab.  We also optimized the gate structure by lowering gate resistance (Rg) and gate-source capacitance (Cgs) to achieve a significant reduction of the LNA NF. In this presentation we will highlight the GaAs FET gate structural modifications needed to achieve the described NF reduction and reveal initial test results.