Th3B: Advanced Semiconductor Technologies

Back to IMS Schedule
Thu 19 Jun | 13:30 - 15:10
205
Advanced Semiconductor Technologies
Wolfram Stiebler
Raytheon Technologies
Lei Zhang
NXP Semiconductors
This session discusses deep-levels and high field-effects in GaN devices including HEMTs and IMPATT diodes. Additional topics include performance implications of gate insulator and metallization design. The session concludes with the characterization of substrates down to cryogenic temperatures.
13:30 - 13:50
Th3B-1 Deep Level Effects and Hot-Electron Reliability in Scaled GaN HEMTs
ABSTRACT
Enrico Zanoni, Andrea Carlotto, Francesco De Pieri, Manuel Fregolent, Marco Saro, Fabiana Rampazzo, Carlo De Santi, Gaudenzio Meneghesso, Matteo Meneghini
Università di Padova, Università di Padova, Università di Padova, Università di Padova, Università di Padova, Università di Padova, Università di Padova, Università di Padova, Università di Padova
13:50 - 14:10
Th3B-2 On-Wafer Characterization of K-Band to V-Band GaN IMPATT Diodes
ABSTRACT
Zhongtao Zhu, Lina Cao, Juncheng Xiong, Yu Duan, Yu-En Jeng, Jinqiao Xie, Patrick Fay
Univ. of Notre Dame, Univ. of Notre Dame, Univ. of Notre Dame, Univ. of Notre Dame, Univ. of Notre Dame, Qorvo, Univ. of Notre Dame
14:10 - 14:30
Th3B-3 AlN/GaN MIS-HEMT With GeN Gate Dielectric for mm-Wave Applications
ABSTRACT
Jianchao Wang, Kaiyu Wang, Ruizhe Zhang, Xiaoqiang He, Sheng Zhang, Jiaqi Guo, Jiebin Niu, Yankui Li, Weichao Wu, Weijun Luo, Xiaojuan Chen, Sen Huang, Xinhua Wang, Ke Wei, Xinyu Liu
CAS, CAS, CAS, CAS, CAS, CAS, CAS, CAS, CAS, CAS, CAS, CAS, CAS, CAS, CAS
14:30 - 14:50
Th3B-4 Influence of Double-Deck T-Gate Structures on Cut-Off Frequency in Al0.3Ga0.7N/AlN/GaN HEMTs
ABSTRACT
Jong Yul Park, Junhyung Jeong, Gyejung Lee, Kyujun Cho, Junhyung Kim, Byoung-Gue Min, Jong-Min Lee, Woojin Chang, Hong-Gu Ji, Dong-Min Kang
ETRI, ETRI, ETRI, ETRI, ETRI, ETRI, ETRI, ETRI, ETRI, ETRI
14:50 - 15:10
Th3B-5 Small- and Large-Signal Characterization of RF Substrates Down to Cryogenic Temperatures
ABSTRACT
Jose Lugo-Alvarez, Quentin Berlingard, Ismaël Charlet, Mikaël Cassé
CEA-LETI, CEA-LETI, CEA-LETI, CEA-LETI
Wolfram Stiebler
Raytheon Technologies
Lei Zhang
NXP Semiconductors