Back to IMS Schedule
Thu 19 Jun | 13:30 - 15:10
205
Advanced Semiconductor Technologies
This session discusses deep-levels and high field-effects in GaN devices including HEMTs and IMPATT diodes. Additional topics include performance implications of gate insulator and metallization design. The session concludes with the characterization of substrates down to cryogenic temperatures.
13:30 - 13:50
Th3B-1 Deep Level Effects and Hot-Electron Reliability in Scaled GaN HEMTs
13:50 - 14:10
Th3B-2 On-Wafer Characterization of K-Band to V-Band GaN IMPATT Diodes
14:10 - 14:30
Th3B-3 AlN/GaN MIS-HEMT With GeN Gate Dielectric for mm-Wave Applications
14:30 - 14:50
Th3B-4 Influence of Double-Deck T-Gate Structures on Cut-Off Frequency in Al0.3Ga0.7N/AlN/GaN HEMTs
14:50 - 15:10
Th3B-5 Small- and Large-Signal Characterization of RF Substrates Down to Cryogenic Temperatures