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Wed 18 Jun | 13:30 - 15:10
205
Highly Integratable Passive Devices Based on CMOS and SOI Technology
In this session, we report exciting advances in integrated passive devices mainly for CMOS and SOI technologies. For example, two SOI RF switches with a series triple-coupled transformer topology demonstrate suitability for compact mm-wave systems, with IP3 levels exceeding 81.5dBm. An SOI digital step attenuator features an ultrawide bandwidth of DC to 51GHz, sub-5dB insertion loss, and a 3.1° RMS phase error. A 10–17GHz continuously tunable CMOS bandpass filter, leveraging mode-switching inductors and Q-enhancement techniques, achieves a broad tuning range and enhanced selectivity. Finally, an ultra-compact D-band Substrate-Integrated-Waveguide (SIW) filter shows the potential of SIW filters for on-chip mm-wave circuit integration.
13:30 - 13:50
We3C-1 A Highly Linear 4W Differential SOI-CMOS RF Switch
13:50 - 14:10
We3C-2 Miniaturized D-Band SPDT/DPDT Switches Using Series Triple Coupled Transformer Cores in 65-nm CMOS SOI
14:10 - 14:30
We3C-3 A DC-51.5 GHz Digital Step Attenuator with Sub-5 dB Insertion Loss and 3.1° RMS Phase Error
14:30 - 14:50
We3C-4 A 10-17 GHz Continuously Tunable CMOS Filter with FlexibleBandwidth Control Based on Mode-Switching Inductors
14:50 - 15:10
We3C-5 An Ultra-Compact D-Band SIW Filter with Multifunction Transitions to Coplanar Input/Output