Th1F: MMIC Power Amplifiers Covering E-Band to D-Band

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Thu 19 Jun | 08:00 - 09:40
211
MMIC Power Amplifiers Covering E-Band to D-Band
David Brown
BAE Systems
Munkyo Seo
Sungkyunkwan Univ.
This session will showcase state-of-the-art MMIC performance at frequency bands covering E-band (74, 84GHz) through D-band (110–170GHz). MMIC technologies ranging from state-of-the-art 100nm GaN-on-SiC, commercial GaAs PHEMT, and 40nm bulk CMOS processes are presented. These results represent new benchmark performance results for these technologies and showcase high-performance on-chip power combining techniques and these amplifiers are applicable to a range of RF applications including E-band wireless backhaul, 6G communications, D-band radar and imaging, satellite communications, and defense electronics.
08:00 - 08:20
Th1F-1 A High-Efficiency E-Band GaN Doherty Power Amplifier with 35.7dBm Output Power and 22.8%/16.8% Peak/6-dB Back-Off Efficiency
ABSTRACT
Bharath Cimbili, Mingquan Bao, Moïse Safari Mugisho, Christian Friesicke, Sandrine Wagner, Rüdiger Quay
Albert-Ludwigs-Universität Freiburg, Ericsson, Albert-Ludwigs-Universität Freiburg, Fraunhofer IAF, Fraunhofer IAF, Albert-Ludwigs-Universität Freiburg
08:20 - 08:40
Th1F-2 E-Band Power Amplifier with 32.2dBm Psat, 31.3dBm OP1dB Utilizing Commercial 0.10-µm GaAs pHEMT Technology
ABSTRACT
Zhenbei Li, Qiuze Yu, Jian Zhang
Wuhan Univ., Wuhan Univ., Wuhan Univ.
08:40 - 09:00
Th1F-3 A Compact Wideband Low-Loss On-Chip Power Combiner for High-Efficiency GaN mm-Wave Power Amplifiers
ABSTRACT
Bharath Cimbili, Mingquan Bao, Christian Friesicke, Sandrine Wagner, Rüdiger Quay
Albert-Ludwigs-Universität Freiburg, Ericsson, Fraunhofer IAF, Fraunhofer IAF, Albert-Ludwigs-Universität Freiburg
09:00 - 09:20
Th1F-4 A 16-Way 115–129GHz High Power Amplifier with 20.9dBm PSAT and 17.6dBm P1dB in 40nm Bulk CMOS
ABSTRACT
Jaegwan Kim, Munkyo Seo
Sungkyunkwan Univ., Sungkyunkwan Univ.
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