Th1F: MMIC Power Amplifiers Covering E-Band to D-Band

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Thu 19 Jun | 08:00 - 09:40
211
MMIC Power Amplifiers Covering E-Band to D-Band
David Brown
BAE Systems
Munkyo Seo
Sungkyunkwan Univ.
This session will showcase state-of-the-art MMIC performance at frequency bands covering E-band (74, 84GHz) through D-band (110–170GHz). MMIC technologies ranging from state-of-the-art 100nm GaN-on-SiC, commercial GaAs PHEMT, and 40nm bulk CMOS processes are presented. These results represent new benchmark performance results for these technologies and showcase high-performance on-chip power combining techniques and these amplifiers are applicable to a range of RF applications including E-band wireless backhaul, 6G communications, D-band radar and imaging, satellite communications, and defense electronics.
08:00 - 08:20
Th1F-1 A High-Efficiency E-Band GaN Doherty Power Amplifier with 35.7dBm Output Power and 22.8%/16.8% Peak/6-dB Back-Off Efficiency
ABSTRACT
Bharath Cimbili, Mingquan Bao, Moïse Safari Mugisho, Christian Friesicke, Sandrine Wagner, Rüdiger Quay
Albert-Ludwigs-Universität Freiburg, Ericsson, Albert-Ludwigs-Universität Freiburg, Fraunhofer IAF, Fraunhofer IAF, Albert-Ludwigs-Universität Freiburg
08:20 - 08:40
Th1F-2 E-Band Power Amplifier with 32.2dBm Psat, 31.3dBm OP1dB Utilizing Commercial 0.10-µm GaAs pHEMT Technology
ABSTRACT
Zhenbei Li, Qiuze Yu, Jian Zhang
Wuhan Univ., Wuhan Univ., Wuhan Univ.
08:40 - 09:00
Th1F-3 A Compact Wideband Low-Loss On-Chip Power Combiner for High-Efficiency GaN mm-Wave Power Amplifiers
ABSTRACT
Bharath Cimbili, Mingquan Bao, Christian Friesicke, Sandrine Wagner, Rüdiger Quay
Albert-Ludwigs-Universität Freiburg, Ericsson, Fraunhofer IAF, Fraunhofer IAF, Albert-Ludwigs-Universität Freiburg
09:00 - 09:20
Th1F-4 A 16-Way 115–129GHz High Power Amplifier with 20.9dBm PSAT and 17.6dBm P1dB in 40nm Bulk CMOS
ABSTRACT
Jaegwan Kim, Munkyo Seo
Sungkyunkwan Univ., Sungkyunkwan Univ.
David Brown
BAE Systems
Munkyo Seo
Sungkyunkwan Univ.