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Thu 19 Jun | 13:30 - 15:10
208
(Joint with ARFTG) On-Wafer Measurement Structures and Processes
Higher frequencies, higher levels of integration and new measurement environments, including cryogenic, are driving changes to on-wafer measurement procedures and equipment. In this joint IMS/ARFTG session, we will review a number of new processes, techniques, and different equipment constructs to help meet these evolving requirements. Topics include on-wafer versions of comprehensive mm-wave mixer measurements, on-wafer power calibration techniques, multiport calibration methods, and ways of dealing with thermally extreme environments.
13:30 - 13:50
Th3D-1 KEYNOTE: Past, Present and Future Challenges of Testing RFIC Industry
13:50 - 14:10
Th3D-2 Integrated Solution for Linear and Non-Linear Single-Touchdown On-Wafer Characterization of D-Band Mixers
14:10 - 14:30
Th3D-3 Characterization Approaches to Reduce Process Variation Dependencies for On-Wafer Power Calibration Transfer Devices in Bi/CMOS Technologies
14:30 - 14:50
Th3D-4 Differential-Mode Characterization of Multi-Port Passives up to 170GHz Using Independent Single-Ended Two-Port Measurements
14:50 - 15:00
Th3D-5 Cryogenic Microwave Probe Technology with High Thermal Insulation