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Mon 16 Jun | 10:10 - 11:50
207
mm-Wave Building Blocks & Components
This session explores key mm-wave building blocks and components. The first paper presents a 28–40GHz phase shifter in 65nm CMOS, achieving less than 0.4° RMS phase error, <0.31dB RMS gain error, and a 31.5dB gain tuning range. The second paper introduces a V-band FMCW transmitter featuring an impedance-invariant voltage gain amplifier phase shifter, also in 65nm CMOS. The third paper showcases a 25–32GHz frequency doubler with up to 32% efficiency and >39dBc harmonic rejection, while the fourth paper reports a compact 24–31GHz complex impedance sensor — both implemented in 22nm FD-SOI. The session concludes with a CâX-band Wilkinson power divider/combiner utilizing a folded two-section mechanism in 65nm bulk CMOS.
10:10 - 10:30
RMo2C-1 A 28–40GHz 6-Bit Variable Gain Phase Shifter with <0.4°/<0.31dB PS RMS Phase/Gain Errors and 31.5-dB Gain Tuning Range
10:30 - 10:50
RMo2C-2 A V-Band Transmitter Front-End IC for Phased-Array FMCW Radar with Impedance-Invariant Variable-Gain Phase Shifter
10:50 - 11:10
RMo2C-3 A Compact 25–32GHz Frequency Doubler with up to 32% Efficiency and >39 dBc Harmonic Rejection in 22nm FDSOI
11:10 - 11:30
RMo2C-4 A 24–31GHz Compact Low-Power Complex Impedance Sensor for Beamforming Transmitters in 22nm FD-SOI
11:30 - 11:50
RMo2C-5 An Ultra-Compact and Broadband C-X-Band Wilkinson Power Divider/Combiner Using a Folded Two-Section Mechanism in 65-nm Bulk CMOS Technology