Back to IMS Schedule
Mon 16 Jun | 13:30 - 15:10
203
Advanced Frequency Generation in Sub-10nm CMOS and SiGe BiCMOS
Bichoy Bahr
Texas Instruments
Steven Turner
BAE Systems
This session demonstrates frequency generation in advanced FinFET CMOS and SiGe BiCMOS technologies. The first two papers present fractional-N PLLs from 13.5GHz to 23GHz in 5nm and 8nm FinFET technologies respectively. The third paper presents a distributed power-combining frequency doubler for H-band frequencies in SiGe BiCMOS. The session concludes with a circuit-under-inductor demonstration for VCOs and PAs in 6nm and 16nm technologies respectively.
13:30 - 13:50
RMo3A-1 A 13.5 to 23GHz Compact PLL Based on a 0.006mm² Transformer-Based Dual-Resonator Tuned LC VCO in 5nm CMOS
Armagan Dascurcu, Bodhisatwa Sadhu, Herschel Ainspan, Gary Kurtzman, John Borkenhagen, Zheng Xu, Jim Strom
IBM, IBM, IBM, IBM, IBM, IBM, IBM
13:50 - 14:10
RMo3A-2 A 16–22GHz Fractional-N PLL in 8nm FinFET with 68 fsrms Jitter
Wanghua Wu, Zhiyu Chen, Kyumin Kwon, Suoping Hu, Pak-Kim Lau, Changhun Song, Ali Binaie, Santosh Kumpatla, Juyeop Kim, Jeiyoung Lee, Chih-Wei Yao, Sangwon Son, Joonhoi Hur
Samsung, Samsung, Samsung, Samsung, Samsung, Samsung, Samsung, Samsung, Samsung, Samsung, Samsung, Samsung, Samsung
14:10 - 14:30
RMo3A-3 A 210–320GHz Power-Combining Distributed Frequency Doubler with Tuned Pre-Amplification in 0.13µm SiGe BiCMOS
Akshay Visweswaran, Yves Baeyens, Mustafa Sayginer, Hernan Castro, Ayush Rai, Shahriar Shahramian
Nokia Bell Labs, Nokia Bell Labs, Nokia Bell Labs, Nokia Bell Labs, Nokia Bell Labs, Nokia Bell Labs
14:30 - 14:50
RMo3A-4 Design Technology Co-Optimization for RF/mmWave Circuits with Circuit Under Inductor (CUI) in FinFET CMOS Technologies
Hsieh-Hung Hsieh, Wei-Ling Chang, Kai-Chun Chang, Wen-Sheng Chen, Yen-Jen Chen, Tzu-Jin Yeh, Shenggao Li, Shih-Hsien Yang, Hua-Chou Tseng, Cho-Ying Lu, Hwa-Yu Yang, Guo-Wei Huang
TSMC, TSMC, TSMC, TSMC, TSMC, TSMC, TSMC, TSMC, TSMC, TSMC, TSMC, NARLabs-TSRI