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Mon 16 Jun | 13:30 - 15:10
203
Advanced Frequency Generation in Sub-10nm CMOS and SiGe BiCMOS
This session demonstrates frequency generation in advanced FinFET CMOS and SiGe BiCMOS technologies. The first two papers present fractional-N PLLs from 13.5GHz to 23GHz in 5nm and 8nm FinFET technologies respectively. The third paper presents a distributed power-combining frequency doubler for H-band frequencies in SiGe BiCMOS. The session concludes with a circuit-under-inductor demonstration for VCOs and PAs in 6nm and 16nm technologies respectively.
13:30 - 13:50
RMo3A-1 A 13.5 to 23GHz Compact PLL Based on a 0.006mm² Transformer-Based Dual-Resonator Tuned LC VCO in 5nm CMOS
13:50 - 14:10
RMo3A-2 A 16–22GHz Fractional-N PLL in 8nm FinFET with 68 fsrms Jitter
14:10 - 14:30
RMo3A-3 A 210–320GHz Power-Combining Distributed Frequency Doubler with Tuned Pre-Amplification in 0.13µm SiGe BiCMOS
14:30 - 14:50
RMo3A-4 Design Technology Co-Optimization for RF/mmWave Circuits with Circuit Under Inductor (CUI) in FinFET CMOS Technologies