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Mon 16 Jun | 13:30 - 15:10
205
mm-Wave Transmitter and Receiver Front-Ends
Swaminathan Sankaran
Texas Instruments
Shahriar Shahramian
Nokia Bell Labs
The mm-wave frontier continues to advance across mainstream Si and III-V-based circuits, achieving excellent performance with enhanced functionality. This session presents a diverse set of circuits and front-ends that push the boundaries of bi-directionality, bandwidth, linearity, and sensitivity. The first paper introduces a GaAs pHEMT low-noise amplifier (LNA) with a sub-3dB noise figure (NF) and wideband operation. The second paper features a 28nm CMOS dual-band LNA designed for 5G applications, offering low power consumption and NF. Next, a 40nm CMOS V-band wideband absorptive receiver with enhanced out-of-band linearity for 5G is presented. The session concludes with a 65nm CMOS bi-directional beamforming front-end, leveraging distributed impedance reshaping.
13:30 - 13:50
RMo3B-1 A 15–50GHz LNA with 2.4dB NF and 25.4±1.4dB Gain in 0.15µm GaAs pHEMT Process
Nengyuan Zhong, Yao Li, Shiwei Hu, Chenhao Gao, Xiang Wang, Yanjie Wang
SCUT, SCUT, SCUT, SCUT, NJUST, SCUT
13:50 - 14:10
RMo3B-2 Design of 22.6–29.5/30.4–43.5GHz Dual-Band Low Power LNA with 2.6–3.8dB NF for Millimeter-Wave 5G Applications in 28-nm CMOS
Haitao Lin, Li Gao, Xinyang Liu, Xiu Yin Zhang
SCUT, SCUT, Sanechips Technology, SCUT
14:10 - 14:30
RMo3B-3 A 50–68GHz IF Absorptive Receiver with 8-GHz IF-Bandwidth Supporting 16-Channel Carrier-Aggregation and 12Gbps-64QAM Modulation for 5G NR FR2-2 Application
Aoran Han, Qingxian Li, Jie Zhou, Xun Luo
UESTC, UESTC, UESTC, UESTC
14:30 - 14:50
RMo3B-4 A 22-to-50GHz Bi-Directional Beamforming CMOS Front-End with Distributed Impedance Reshaping Technique for 5G NR FR2 Applications
Weiqi Zheng, Wei Deng, Junlong Gong, Haikun Jia, Dongze Li, Hongliang Wu, Baoyong Chi
Tsinghua Univ., Tsinghua Univ., Tsinghua Univ., Tsinghua Univ., Tsinghua Univ., Tsinghua Univ., Tsinghua Univ.