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Mon 16 Jun | 13:30 - 15:10
205
mm-Wave Transmitter and Receiver Front-Ends
The mm-wave frontier continues to advance across mainstream Si and III-V-based circuits, achieving excellent performance with enhanced functionality. This session presents a diverse set of circuits and front-ends that push the boundaries of bi-directionality, bandwidth, linearity, and sensitivity. The first paper introduces a GaAs pHEMT low-noise amplifier (LNA) with a sub-3dB noise figure (NF) and wideband operation. The second paper features a 28nm CMOS dual-band LNA designed for 5G applications, offering low power consumption and NF. Next, a 40nm CMOS V-band wideband absorptive receiver with enhanced out-of-band linearity for 5G is presented. The session concludes with a 65nm CMOS bi-directional beamforming front-end, leveraging distributed impedance reshaping.
13:30 - 13:50
RMo3B-1 A 15–50GHz LNA with 2.4dB NF and 25.4±1.4dB Gain in 0.15µm GaAs pHEMT Process
13:50 - 14:10
RMo3B-2 Design of 22.6–29.5/30.4–43.5GHz Dual-Band Low Power LNA with 2.6–3.8dB NF for Millimeter-Wave 5G Applications in 28-nm CMOS
14:10 - 14:30
RMo3B-3 A 50–68GHz IF Absorptive Receiver with 8-GHz IF-Bandwidth Supporting 16-Channel Carrier-Aggregation and 12Gbps-64QAM Modulation for 5G NR FR2-2 Application
14:30 - 14:50
RMo3B-4 A 22-to-50GHz Bi-Directional Beamforming CMOS Front-End with Distributed Impedance Reshaping Technique for 5G NR FR2 Applications