Back to IMS Schedule
Mon 16 Jun | 15:40 - 17:20
205
Design Techniques of RF/mm-Wave Low-Noise Amplifiers (LNAs) and Front-End Modules (FEMs)
In this session, RF/mm-wave low-noise amplifiers (LNAs) and front-end modules (FEMs) are presented. Different design techniques to achieve high circuit performance in terms of wide bandwidth, low noise, high output power, and superior PAE are proposed. For the first paper, a 23–40GHz LNA with a dual-path noise-cancelling technique is demonstrated. The second paper is an LNA operating at V and E frequency bands with a three-line coupler to provide wide-band noise and power matching. The third paper presents a sub-10GHz RF front-end module composed of a digital PA with a 4-way balanced power combining network and an LNA with a dual-resonant input matching approach. For the fourth paper, a wideband bidirectional switchless PA-LNA with 8-shaped transformers for W frequency bands is proposed. The final paper is a 24–30GHz GaN-on-SiC FEM with a 37.1dBm output power and 34.4% PAE.
15:40 - 16:00
RMo4B-1 A 23–40GHz Compact LNA with Dual-Path Noise-Cancelling Technology Enabled by a Quad-Coil Coupled Transformer
16:00 - 16:20
RMo4B-2 A 3.23dB Average NF and 2.32dB Minimum NF V-/E-Band Common-Gate/Common-Source Joint-Feeding LNA with Three-Line Coupler Input Matching for Simultaneous Noise/Power Matching
16:20 - 16:40
RMo4B-3 A 22-nm CMOS 3.5–7.2GHz Wideband FEM with a Balanced-Power-Combining DPA and a Dual-Resonant Input Matching LNA
16:40 - 17:00
RMo4B-4 An Ultra-Compact Switchless Bidirectional PA-LNA with 8-Shaped Transformer-Based Inter-Stage Matching Networks for W-Band Applications
17:00 - 17:20
RMo4B-5 A 24–30GHz GaN-on-SiC T/R Front-End Module with 37.1-dBm Output Power and 34.4% PAE