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Tue 17 Jun | 10:10 - 11:50
203
Design Techniques for High Performance SiGe PAs
This session covers recent developments, advanced design techniques, and methodologies in high performance RF and mm-wave SiGe PAs. The first paper introduces a new design methodology for algorithmic inverse design and optimization of multi-stage power-combined mm-wave PAs. The second paper demonstrates the first silicon-based PA providing multiple watts of power at Ka-band. The next paper is a 17–30GHz SiGe common-collector common-base PA with enhanced large-signal stability for SATCOM application. The fourth paper presents an efficient Q-band balanced PA designed using a two-tone load-pull optimization technique. The last paper demonstrates a compact, reconfigurable dual-band 5/6GHz SiGe PA for Wi-Fi 6E application.
10:10 - 10:30
RTu2A-1 Topology-Optimized Nonintuitive Multilayered mm-Wave Power Amplifiers
10:30 - 10:50
RTu2A-2 31.7 and 36.7dBm Ka-Band SiGe BiCMOS Power Amplifiers Using Resonated Amplifier Cores and Optimized Power Combining
10:50 - 11:10
RTu2A-3 A SiGe Common-Collector-Common-Base Linear Power Amplifier with 17–28-GHz P1dB 3-dB Bandwidth and Enhanced Large-Signal Stability
11:10 - 11:30
RTu2A-4 A Linear Q-Band Balanced Power Amplifier in a 130nm SiGe BiCMOS Technology Using Two-Tone Load-Pull Optimization
11:30 - 11:50
RTu2A-5 A 5/6GHz Compact, Dual-Band, and Highly Linear Wi-Fi 6E SiGe HBT Power Amplifier Using Q-Modulated Switched Capacitor Interstage Matching Network and Optimized Output Stage