The Tea on IMS2026 is Piping HOT!
We're continuing to give you the inside track and spilling more tea with the not to be missed RFTT2026 papers!
Accelerated Training of Surrogate Models for EM Surrogate Models
Tu3I: Rapid Full-Wave Training-Data Synthesis for Deep-Learning Surrogates
Vinay Chenna, Univ. of Southern California; Jon Ho, Univ. of Southern California; Jui-Hung Sun, Univ. of Southern California; Constantine Sideris, Stanford Univ.
Summary: This paper presents a new approach to generate the datasets required to train EM surrogate models. The authors combine fast EM simulation and direct binary search sample generation to reduce the computational cost of training surrogate models. The approach is demonstrated through the prediction of the performance of pixelated metallic antennas with dielectric substrates.
Heterogeneous Chiplet Integration Beyond 100 GHz
We1G: Demonstration of an F-Band Heterogeneously Integrated Multi-Chip Downconverter
Caitlyn Cooke, Kevin Leong, Michael Eller, Maxwell Duffy, Nancy Lin, Xiaobing Mei, K K Loi, Alfonso Escorcia, Khanh Nguyen, Samuel Esparza, William Deal; Northrop Grumman Corp.
Summary: This paper describes the first heterogeneous integration of 35-nm InP HEMT technology on a SiC interposer. As a demonstration, several InP HEMT die are integrated to realize a complete F-band downconverter in an 11 mm by 4 mm form factor.
A K-Band PA that is both Broadband and Efficient
We2F: A 16.5 to 23.1 GHz High Efficiency Broadband GaN Doherty Power Amplifier Utilizing Relative Input Phase Compensation Circuit
Keigo Nakatani, Takuma Torii, Ryuji Inagaki, Akihito Hirai; Mitsubishi Electric Corp.
Summary: This paper reports a GaN Doherty PA in a 0.15um GaN on SiC process. The authors combine various techniques to realize over 2W output power and peak PAE >30% over a 33% fractional bandwidth at K band.
Pushing the Limits of Power Density in mmW HBT LNAs
Th1A: A Compact D-band 32-Way 28.2 dBm Power Amplifier in InP HBT
M Seo, Sungkyunkwan Univ.; J Jang, Sungkyunkwan Univ.; N Sharma, Samsung; W -S Choi, Samsung; G Xu, Samsung
Summary: This paper reports a wideband PA implemented in a 250nm InP HBT process. The authors leverage several techniques to push power density to the limits and achieve over 400mW saturated output power at 9.6-17.5% PAE from 126-158 GHz.
Pushing the Limits of Receiver Bandwidth and Performance
Th2A: A Sub-mmW Receiver MMIC Achieving a 6.8-dB Average Noise Figure Over a >190-GHz Bandwidth
Fabian Thome, Fraunhofer IAF; Patrick Umbach, Fraunhofer Institute for Applied Solid State Physics; Arnulf Leuther, Fraunhofer IAF
Summary: This paper presents a 140-333GHz receiver IC implemented in 35-nm In GaAs metamorphic HEMT technology. The amplifier achieves an impressive average noise figure of 6.8dB over this frequency range while providing an average conversion gain of 16.5dB.