WMK: Next-Generation Devices: Where Do Ultra-Wide Bandgap Semiconductors Fit In?

Presentation Abstract
Predictions based on popular figures of merit, such as the Johnson Figure of Merit (JFOM) and Baliga Figure of Merit (BFOM), have motivated the development of wide bandgap semiconductors (WBGSs) for RF and power electronics. In recent years, the rapid adoption of gallium nitride (GaN) and silicon carbide (SiC) demonstrates that investments in these technologies is indeed paying off. Thus, it is natural to look ahead and ask if even better performance can be obtained from devices based on emerging ultra-wide bandgap semiconductors (UWBGSs). While the above mentioned FOMs indicate that these UWBGSs could outperform today’s WBGS devices, there remain technological hurdles at all levels: from substrates and epitaxy, to contacts and passivation. This workshop brings together international experts currently investigating these topics to discuss the state-of-the-art of UWBGS III-Nitride (AlGaN, AlN), gallium oxide and diamond devices for RF and power electronics. In addition to covering the use of UWBGSs as a channel material, the use of these materials as substrates and thermal management solutions will also be examined, with the overarching goal of exploring how to best use UWBGS in next-generation electronic devices. The workshop will conclude with a round table session to invite audience participation and interaction with the speakers.