Tu3D: Sub-Teraherz and Terahertz Signal Sources

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Tue 17 Jun | 13:30 - 15:10
211
Sub-Teraherz and Terahertz Signal Sources
Hamed Rahmani
New York Univ.
Richard Al Hadi
ÉTS Montréal
This session explores new approaches for sub-THz and THz signal generation, spanning diverse technologies and architectures. The first paper presents a 4–240GHz InP variable-gain amplifier employing an analog-controlled input attenuation network for versatile performance tuning. Next, a 4–420GHz distributed amplifier MMIC in 20nm InGaAs-on-Si HEMT technology achieves 11±2dB of gain. A 280GHz sub-harmonic injection-locked oscillator in 45nm CMOS PD SOI demonstrates robust frequency generation. Finally, a 300GHz-band single-balanced resistive mixer module in 60nm InP HEMT features LO leakage suppression. Collectively, these designs pave the way for next-generation THz communication systems.
13:30 - 13:50
Tu3D-1 A 4–240-GHz InP Variable-Gain Amplifier Using an Analog-Controlled Input Attenuation Network
ABSTRACT
Phat T. Nguyen, Viet-Anh Ngo, Nhat Tran, Natalie Wagner, Alexander Stameroff, Anh-Vu Pham
Univ. of California, Davis, Univ. of California, Davis, Univ. of California, Davis, Keysight Technologies, Keysight Technologies, Univ. of California, Davis
13:50 - 14:10
Tu3D-2 A 4-420-GHz Distributed Amplifier MMIC in a 20-nm InGaAs-on-Si HEMT Technology With 11±2-dB Gain
ABSTRACT
Fabian Thome, Arnulf Leuther
Fraunhofer IAF, Fraunhofer IAF
14:10 - 14:30
Tu3D-3 A 280GHz Sub-Harmonic Injection Locked Oscillator in 45nm CMOS PD SOI
ABSTRACT
Mehmet Aylar, Alexandre Siligaris, José-Luis Gonzalez Jimenez, Benjamin Blampey
CEA-LETI, CEA-LETI, CEA-LETI, CEA-LETI
14:30 - 14:50
Tu3D-4 300-GHz-Band Single-Balanced Resistive Mixer Module in 60-nm InP HEMT Technology with LO Leakage Suppressing Function
ABSTRACT
Teruo Jyo, Hiroshi Hamada, Takuya Tsutsumi, Daisuke Kitayama, Ibrahim Abdo, Munehiko Nagatani, Hiroyuki Takahashi
NTT, NTT, Osaka Metropolitan University, NTT, NTT, NTT, NTT
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