RTu2C: Heterogeneous Integration for RF/mm-Wave Applications and Measurement Techniques

Presentation Abstract
Heterogeneous integration is one of the most interesting technology areas that is quickly finding its place in RF and mm-wave applications. This session consists of four papers describing circuits and systems implemented by integrating chips fabricated in different semiconductor technologies into one solution platform. The fifth paper describes a single source impedance thermal noise measurement technique. The session starts with the presentation of a heterogeneously integrated power amplifier module using BiCMOS and RF SOI CMOS chips. The second paper presents integration of GaN circulator with RF SOI voltage boosted clock generation IC. The next paper describes a GaN amplifier embedded in a glass substrate. The fourth paper presents the 3D-integration platform for scaled GaN-on-Si dielets with Intel 16 Si CMOS. The final paper described a formalism for determining thermal noise parameters for MOSFET transistors that requires only single source impedance measurements.