Tu1B: Frequency Multipliers from D-Band to Sub-THz

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Tue 9 Jun | 08:00 - 09:40
254AB
Minoru Fujishima
Hiroshima Univ.
Wei Deng
Tsinghua Univ.
This session presents advanced frequency multiplication techniques for signal generation from 100 to 310 GHz in CMOS and SiGe technologies. The papers demonstrate phase-aligned harmonic recombination, coupled-line-based output matching, amplifier–multiplier chains, and coherent power combining to enhance efficiency, output power, bandwidth, and harmonic suppression. Reported results include up to 16 dBm output power, +26.5 dBm EIRP, and >70 dBc harmonic rejection. Together, these works illustrate scalable circuit strategies for high-purity, high-power D-band and sub-terahertz transmitters suitable for emerging communication and sensing applications.
08:00 - 08:20
Tu1B-1 A Calibration-Free 55-to-70 dBc H1 Rejection, 13.8 % Efficiency, 102-to-120 GHz CMOS Frequency Tripler using Phase-Alignment Technique for Harmonic Recombination
ABSTRACT
Sarah Koop-Brinkmann, Victor Lasserre, Vadim Issakov
Technische Univ. Braunschweig, Technische Univ. Braunschweig, Technische Univ. Braunschweig
08:20 - 08:40
Tu1B-2 A 110–142-GHz Frequency Quadrupler With 13.1-dBm Psat Achieved by Coupled-Line-Based Output Matching Technique in 130-nm SiGe
ABSTRACT
Zuojun Wang, Haorui Luo, Qin Dong, Zhou Shu, Jixin Chen, Kevin Tshun Chuan Chai, Yongxin Guo
City Univ. of Hong Kong, National Univ. of Singapore, National Univ. of Singapore, Xidian Univ., Southeast Univ., Agency for Science, Technology and Research (A*STAR), City Univ. of Hong Kong
08:40 - 09:00
Tu1B-3 A 108–170-GHz ×6 Amplifier-Multiplier Chain with 16-dBm Output Power and ＞29.5-dBc Harmonics Rejection in 130-nm SiGe Process
ABSTRACT
Chang Shu, Lingzheng Kong, Peigen Zhou, Dawei Tang, Zekun Li, Liqun Lu, Jixin Chen, Wei Hong
Southeast Univ., Southeast Univ., Southeast Univ., Southeast Univ., Southeast Univ., Southeast Univ., Southeast Univ., Southeast Univ.
09:00 - 09:20
Tu1B-4 A Broadband 241-306 GHz Frequency Multiply-By-24 Based Coherent Radiator Delivering +26.5 dBm EIRP in 90-nm SiGe BiCMOS
ABSTRACT
Jaskirat Singh Virdi, Wei Sun, Aydin Babakhani
Univ. of California, Los Angeles, Univ. of California, Los Angeles, Univ. of California, Los Angeles