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RTu1C-3: An 8-Lane 58Gb/s/Lane 0.66pJ/bit Modulator Driver Electrical-IC for a 3-D Integrated Silicon Photonic Transmitter in 22nm FD-SOI Process
A modulator driver circuit for electro-absorption modulators (EAMs) is designed in 22 nm FD-SOI technology as part of the electrical integrated circuit (EIC) of a 3D-integrated 8-lane silicon photonic...
WMA-2: Chipletization, RF Design and Thermal Modeling of mm-Wave InP Power Amplifiers and Modules
… This talk focuses on the integration of InP Power Amplifier chiplets onto imec’s 300mm RF silicon interposer technology. Combining high frequency InP transistors with a RF optimized silicon …