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We1G-4: Monolithic Implementation and Performance Comparison of Three Single Balanced Architectures for D-Band HEMT Mixers
Three mixers with different single balanced architectures are compared to tackle the implementation of fully monolithic integrated D-band receivers and transmitters with high-electron-mobility transis...
We1G-5: A DC-to-170GHz Direct-Coupled Mixer Achieving 47dB LO-RF Isolation in 250nm InP DHBT Technology
A DC-to-170-GHz down-conversion mixer was fabricated in 250-nm InP DHBT technology for VNAs. The chip is direct coupled, which integrates LO and RF baluns, a Gilbert mixer cell, and IF amplifiers. Thr...
We1H-1: KEYNOTE: LNA and Power Amplifiers for Operation up to 100GHz
This presentation provides an overview of the different applications for amplifiers for use between 1GHz and 100GHz and will highlight the market needs for both satellite and land-based communications...
We1H-2: A Ku-Band Input Harmonically Tuned Class-F GaAs MMIC Power Amplifier Achieving 28.4-dBm Psat and 56% Peak PAE
This paper presents a Ku-band input harmonically tuned class-F GaAs MMIC power amplifier (PA). The PA incorporates a simplified class-F output matching network (CF-OMN) using short-length transmission...
We1H-3: A Continuous-Mode Class-F-1 X-Band GaN MMIC Power Amplifier with a 29.7% Fractional Bandwidth
This paper presents a high-performance X-band continuous-mode Class-F-1 MMIC power amplifier (PA) in 0.25-µm GaN technology. Design considerations and challenges of continuous-mode Class-F-1 (CCF-1) h...
We1H-4: An X-Band 35-dBm Compact Continuous-Mode Class-J Power Amplifier in 0.25-µm GaN Process
This paper presents an X-band 35-dBm continuous-mode class-J power amplifier (PA) implemented using 0.25-µm GaN process, featuring a compact chip size of 2.5 mm² and exceptional performance characteri...
We1H-5: An X-Band Low-Voltage GaN HEMT Stacked Power Amplifier Operating in Class-J with Active Second Harmonic Injection
This paper describes a stacked power amplifier (PA) operating in Class-J mode over 9.0–10.0 GHz in which the efficiency of the PA is enhanced by active second harmonic (2f) injection. Sony’s GaN HEMT ...
We2B-1: A 22–30GHz Ultra Low RMS Phase Error SiGe HBT BiCMOS Active Vector Modulator Phase Shifter with a Tunable Two-Section Lumped Element Differential Quadrature Hybrid
This work presents a 5-bit Ka-band active vector modulator phase shifter (AVMPS) with ultra-low root-mean-square (RMS) phase error and low RMS gain error for emerging LEO SATCOM. To attain wideband op...
We2B-2: A 28/39-GHz Reconfigurable Phased-Array Transmitter Front-End for 5G New Radio in a 65nm CMOS
This paper presents a reconfigurable phased-array transmitter (TX) front-end for 5G new radio in 65-nm CMOS. A reconfigurable up-converter is implemented to support dual-band operation around K/Ka ban...
We2B-3: A 28GHz Compact Phased-Array Beamformer with 21.3dBm PSAT and 5.2dB Noise Figure in 40nm CMOS
This paper presents a 28-GHz compact high-power TRX phased-array beamformer implemented in 40-nm CMOS for 5G applications. A high-power PA-LNA integrates a parallel combining transformer (PCT) embedde...