We3H: High Efficiency Doherty and LMBA Power Amplifiers

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Wed 18 Jun | 13:30 - 15:10
215
High Efficiency Doherty and LMBA Power Amplifiers
Vittorio Camarchia
Politecnico di Torino
Peter Asbeck
Univ. of California, San Diego
This session focuses on advances in power amplifiers using load-modulation architectures to improve efficiency at back-off power levels, as needed in most modulation formats today. Papers cover work at frequencies between 2GHz and 30GHz, and technologies including CMOS-SOI, GaAs HBT, Gas pHEMT and GaN.
13:30 - 13:50
We3H-1 KEYNOTE: Future State of GaN MMIC Technology for Defense Electronics
ABSTRACT
David F. Brown
BAE Systems
13:50 - 14:10
We3H-2 A Broadband Doherty-like Load-Modulated Balanced Amplifier with an Optimized Impedance Transformation Ratio in InGaP/GaAs HBT Process for Handset applications
ABSTRACT
Byeongcheol Yoon, Sooji Bae, Seungju Lee, Sungwoon Hwang, Jooyoung Jeon, Junghyun Kim
Hanyang Univ., Hanyang Univ., Hanyang Univ., Hanyang Univ., Gangneung-Wonju National University, Hanyang Univ.
14:10 - 14:30
We3H-3 Wideband 3-W GaAs MMIC Doherty PA with Stacked Devices and Load Variation Tolerance Under 2.5:1 VSWR
ABSTRACT
Anna Piacibello, Giulia Bartolotti, Vittorio Camarchia
Politecnico di Torino, Politecnico di Torino, Politecnico di Torino
14:30 - 14:50
We3H-4 A Sub-6GHz Ultra-Compact 69.8% Drain Efficiency Harmonic Control Doherty Power Amplifier in GaN Technology
ABSTRACT
Sih-Han Li, Jie Zhang, Shawn S.H. Hsu
ITRI, ITRI, National Tsing Hua Univ.
14:50 - 15:10
We3H-5 A Ka-Band GaN Doherty Power Amplifier with High Efficiency Over a Fractional Bandwidth of 20.4%
ABSTRACT
Moïse Safari Mugisho, Christian Friesicke, Mohammed Ayad, Thomas Maier, Rüdiger Quay
Fraunhofer IAF, Fraunhofer IAF, UMS, Fraunhofer IAF, Fraunhofer IAF
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