We3H: High Efficiency Doherty and LMBA Power Amplifiers

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Wed 18 Jun | 13:30 - 15:10
215
High Efficiency Doherty and LMBA Power Amplifiers
Vittorio Camarchia
Politecnico di Torino
Peter Asbeck
Univ. of California, San Diego
This session focuses on advances in power amplifiers using load-modulation architectures to improve efficiency at back-off power levels, as needed in most modulation formats today. Papers cover work at frequencies between 2GHz and 30GHz, and technologies including CMOS-SOI, GaAs HBT, Gas pHEMT and GaN.
13:30 - 13:50
We3H-1 KEYNOTE: Future State of GaN MMIC Technology for Defense Electronics
ABSTRACT
David F. Brown
BAE Systems
13:50 - 14:10
We3H-2 A Broadband Doherty-like Load-Modulated Balanced Amplifier with an Optimized Impedance Transformation Ratio in InGaP/GaAs HBT Process for Handset applications
ABSTRACT
Byeongcheol Yoon, Sooji Bae, Seungju Lee, Sungwoon Hwang, Jooyoung Jeon, Junghyun Kim
Hanyang Univ., Hanyang Univ., Hanyang Univ., Hanyang Univ., Gangneung-Wonju National University, Hanyang Univ.
14:10 - 14:30
We3H-3 Wideband 3-W GaAs MMIC Doherty PA with Stacked Devices and Load Variation Tolerance Under 2.5:1 VSWR
ABSTRACT
Anna Piacibello, Giulia Bartolotti, Vittorio Camarchia
Politecnico di Torino, Politecnico di Torino, Politecnico di Torino
14:30 - 14:50
We3H-4 A Sub-6GHz Ultra-Compact 69.8% Drain Efficiency Harmonic Control Doherty Power Amplifier in GaN Technology
ABSTRACT
Sih-Han Li, Jie Zhang, Shawn S.H. Hsu
ITRI, ITRI, National Tsing Hua Univ.
14:50 - 15:10
We3H-5 A Ka-Band GaN Doherty Power Amplifier with High Efficiency Over a Fractional Bandwidth of 20.4%
ABSTRACT
Moïse Safari Mugisho, Christian Friesicke, Mohammed Ayad, Thomas Maier, Rüdiger Quay
Fraunhofer IAF, Fraunhofer IAF, UMS, Fraunhofer IAF, Fraunhofer IAF
Vittorio Camarchia
Politecnico di Torino
Peter Asbeck
Univ. of California, San Diego