RTu4B: Circuit Blocks for D-Band Integrated Systems

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Tue 17 Jun | 15:40 - 17:20
205
Circuit Blocks for D-Band Integrated Systems
Muhammad Waleed Mansha
Nokia Bell Labs
Kenichi Okada
Science Tokyo
In this session, the generation of D-band signals using a tripler with adaptive biasing and a regenerative frequency shifter will be presented. For interfacing transmitter and receiver elements to a single antenna, the session will include a presentation on an integrated quasi circulator, based on a coupled-line coupler with tunable termination. The session will also present a compact PA for phased arrays to enable scaling of half-wavelength spaced array elements as well as a wideband PA that provides full D-band coverage by utilizing coupled-line-based matching networks.
15:40 - 16:00
RTu4B-1 110-to-140GHz Frequency Tripler with 13% Efficiency, 7.2dBm Psat Using Adaptive Biasing and 3rd Harmonic Boosting in 22nm FDSOI
ABSTRACT
Victor Lasserre, Sarah Koop-Brinkmann, Christian Ziegler, Finn-Niclas Stapelfeldt, Vadim Issakov
Technische Univ. Braunschweig, Technische Univ. Braunschweig, Technische Univ. Braunschweig, Technische Univ. Braunschweig, Technische Univ. Braunschweig
16:00 - 16:20
RTu4B-2 A 126–137GHz Regenerative Frequency Shifter in 22nm FDSOI
ABSTRACT
Victor Lasserre, Finn-Niclas Stapelfeldt, Sarah Koop-Brinkmann, M. Dimić, F. Padovan, Vadim Issakov
Technische Univ. Braunschweig, Technische Univ. Braunschweig, Technische Univ. Braunschweig, Infineon Technologies, Infineon Technologies, Technische Univ. Braunschweig
16:20 - 16:40
RTu4B-3 A 200GHz Quasi-Circulator with a Widely Tunable Termination for >30dB Isolation and 8.3dB SNR Degradation in a 22nm FD SOI Process
ABSTRACT
Hyunwoo Seo, Omeed Momeni
Univ. of California, Davis, Univ. of California, Davis
16:40 - 17:00
RTu4B-4 An Ultra-Compact and Wideband D-Band Power Amplifier in 28nm CMOS with Area-Efficient Coupled Line-Based Matching Network
ABSTRACT
Hyo-Ryeong Jeon, Hokeun Lee, Sang-Gug Lee, Kyung-Sik Choi
KAIST, KAIST, KAIST, Yonsei Univ.
17:00 - 17:20
RTu4B-5 A 110-to-203-GHz 18.3-dBm Broadband Power Amplifier Using Modified Three-Conductor Baluns in 130-nm SiGe BiCMOS
ABSTRACT
Shuyang Li, Shouqing Fu, Xin Liu, Quanqin Liao, Huibo Wu, Shunhua Hu, Wenhua Chen
Tsinghua Univ., Tsinghua Univ., Xidian Univ., Wuhan Univ., Tsinghua Univ., Tsinghua Univ., Tsinghua Univ.
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