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Mon 8 Jun | 08:00 - 09:40
Room: 254AB
This session features four papers on high-performance Ku- and Ka-band CMOS oscillators utilizing innovative architectures including: triple-tank resonators for flicker-noise suppression; area-efficient Gm boosted cores; series-resonance tank with 3rd harmonic extraction; and quad-mode inductive switching. These designs achieve high figures-of-merit and ultra-wide tuning ranges across a frequency span of 9.9 to 30GHz, addressing key challenges in next-generation frequency synthesis.
08:00 - 08:20
Mo1B-1 A 12–16.3-GHz 197.7-dBc/Hz-FOMT Harmonic-Shaping VCO Using Enhanced Common-Mode Resonance Expansion Based on a Triple-Tank Coupled Resonator
08:20 - 08:40
Mo1B-2 A 15–18.3GHz Upper Ku-Band LC-VCO Achieving 201dBc/Hz FoMA in 65-nm CMOS
08:40 - 09:00
Mo1B-3 Cross-Coupled CMOS Series-Resonance VCO with 3rd-Harmonic Output and -142dBc/Hz Phase Noise at 10MHz Offset from 29.7GHz
09:00 - 09:20
Mo1B-4 Fundamental 9.9-to-30GHz 207dBc/Hz FoMT Quad-Core Quad-Mode VCO Utilizing One-Coil-For-All Topology in 40nm CMOS