Mo1B: Advanced LC-VCO Topologies for Ku- and Ka-Band

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Mon 8 Jun | 08:00 - 09:40
254AB
Teerachot Siriburanon
Univ. College Dublin
Hanli Liu
Zhejiang Univ.
This session features four papers on high-performance Ku- and Ka-band CMOS oscillators utilizing innovative architectures—including triple-tank resonators for flicker-noise suppression, area-efficient Gm boosted cores, series-resonance tank with 3rd harmonic extraction, and quad-mode inductive switching. These designs achieve high figures-of-merit and ultra-wide tuning ranges across a frequency span of 9.9 to 30 GHz, addressing key challenges in next-generation frequency synthesis.
08:00 - 08:20
Mo1B-1 A 12-16.3-GHz 197.7-dBc/Hz-FOMT Harmonic-Shaping VCO Using Enhanced Common-Mode Resonance Expansion Based on a Triple-Tank Coupled Resonator
ABSTRACT
Jin Zhang, Miao Yu, Kaixue Ma
Tianjin Univ., Tianjin Univ., Tianjin Univ.
08:20 - 08:40
Mo1B-2 A 15–18.3 GHz Upper Ku-Band LC-VCO Achieving 201 dBc/Hz FoMA in 65-nm CMOS
ABSTRACT
Alan Nelson, Adarsh Yadav, Narahari N. Moudhgalya, Abhishek Srivastava
IIIT, Hyderabad, IIIT, Hyderabad, IIIT, Hyderabad, IIIT, Hyderabad
08:40 - 09:00
Mo1B-3 Cross-Coupled CMOS Series-Resonance VCO with 3rd-Harmonic Output and -142 dBc/Hz Phase Noise at 10 MHz Offset from 29.7 GHz
ABSTRACT
KEMAL VURAL, ANDREA BILATO, Guglielmo De Filippi, Andrea MAZZANTI
Univ. of Pavia, FONDAZIONE CHIPS-IT, FONDAZIONE CHIPS-IT, Univ. of Pavia
09:00 - 09:20
Mo1B-4 A Fundamental 9.9-to-30GHz 207dBc/Hz FoMT Quad-Core Quad-Mode VCO Utilizing One-Coil-For-All Mechanism in 40nm CMOS
ABSTRACT
Changqi Zhou, Hao He, Haobin He, Hanlin Yang, Yi Liu, Zuojun Wang, Bin Li, Xiang Yi, Zhijian Chen
South China Univ. of Technology, National Univ. of Singapore, South China University of Techonology, Hong Kong Univ. of Science and Technology, Hong Kong Univ. of Science and Technology, City Univ. of Hong Kong, South China Univ. of Technology, South China University of Techonology, South China University of Techonology