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Mon 8 Jun | 10:10 - 11:50
257AB
This session highlights recent advances in LEO SATCOM and FR3 transmitter front-ends and power amplifiers, covering devices, circuits, packaging, and design automation. The first paper demonstrates a high-power, high-efficiency complementary BiCMOS PA using both high-speed NPN and PNP devices. The second introduces a Ka-band 4-element beamforming transmitter front-end for LEO ground terminals with a negative-feedback-based interstage matching network. The third presents a compact, watt-level, thermally robust BiCMOS flip-chip PA module for SATCOM transmit front-ends. The final paper showcases a fast specs-to-silicon mmWave RFIC design framework using AI-assisted specs-to-layout with layout-to-silicon constraint integration.
10:10 - 10:30
Mo2C-1 A High Performance Complementary SiGe HBT Power Amplifier With A Three Conductor Coupled Line Four-Way Wilkinson Combiner Balun for Emerging K-band LEO SATCOM Transmit Front-End IC
10:30 - 10:50
Mo2C-2 A Ka-Band CMOS 4-Element Beamforming Transmitter for LEO SATCOM using PA with Negative-Feedback-Based Interstage Matching Network and Asymmetric Wilkinson Power Divider
10:50 - 11:10
Mo2C-3 A Watt-level, Thermally Reliable Ku-band SiGe HBT Cascode Flip-Chip Power Amplifier Module Using an Optimal IC-to-Package ElectroThermal Codesign for LEO SATCOM Transmit Front-End
11:10 - 11:30
Mo2C-4 Top-Metal-Only RFIC Retargeting for Fast Specs-to-Silicon Iteration Enabled by AI-Assisted Inverse Design