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Mon 8 Jun | 13:30 - 15:10
Room: 257AB
This technical session highlights state-of-the-art Power Amplifier (PA) architectures for D-band and mm-wave applications in bulk CMOS and FD-SOI. Key innovations include a D-band variable-gain PA using Guanella transformers for 36% Fractional Bandwidth (FBW) and 20Gb/s 16-QAM signaling, alongside ultra-compact 145GHz PAs featuring adaptive back-gate biasing and diode-based linearization. Ultra-broadband performance is showcased through a 9.5–40GHz linear PA utilizing compensated coupled-line transformers (126.5% FBW) and a 15.5–46.0GHz PA with high-efficiency matching networks. Finally, a 40GHz load-isolated Doherty PA is presented, offering enhanced VSWR resiliency and high efficiency for robust, high-speed wireless communication.
13:30 - 13:50
Mo3C-1 A D-Band Variable-Gain Balanced Power Amplifier with 36% FBW, 18.2dBm PSAT and Reconfigurable Adaptive Bias in 22-nm FD-SOI
13:50 - 14:10
Mo3C-2 A 0.036mm², 145GHz CMOS Power Amplifier with 7.4% PAE1dB and 4.2dBm OP1dB for Large Arrays
14:10 - 14:30
Mo3C-3 A 9.5-to-40GHz Ultra-Broadband Linear Power Amplifier with Compensated Coupled-Line Transformer in 65-nm Bulk CMOS
14:30 - 14:50
Mo3C-4 A 15.5–46.0GHz Broadband Power Amplifier with 19.0–22.0dBm Psat and 30.0% Peak PAEmax in 28-nm Bulk CMOS
14:50 - 15:10
Mo3C-5 A 37–43GHz VSWR-Resilient Load-Isolated Doherty Power Amplifier Achieving 26% Average PAE at 36Gb/s in 45-nm SOI CMOS