Mo4C: Sub-THz power amplifiers and bidirectional amplifiers

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Mon 8 Jun | 15:40 - 17:20
257AB
Mohamed Elkhouly
Broadcom Corp.
Wooram Lee
Pennsylvania State Univ.
This session will present new design techniques for sub-THz power amplifiers to achieve high output power, wide bandwidth, and compact chip area. This session will also present a compact, high-gain sub-THz bidirectional amplifier.
15:40 - 16:00
Mo4C-1 A 187–224-GHz 20-dB-Gain 4.5-dBm-Psat Power Amplifier with Dual-Band Matching Networks and Slotline Combining in 40-nm CMOS
ABSTRACT
Cheng-Xuan Tsai, Chun-Hsing Li
National Taiwan Univ., National Taiwan Univ.
16:00 - 16:20
Mo4C-2 A Compact 125–150-GHz Power Amplifier in 90-nm SiGe 9HP+ BiCMOS With 34-dB Gain for Phased-Array Transmitters
ABSTRACT
Joon-Hyung Kim, Jae-Hyeok Song, Min-Seok Baek, Jong-Seong Park, Gabriel Rebeiz, Choul-Young Kim
Chungnam National Univ., Chungnam National Univ., Chungnam National Univ., Chungnam National Univ., Univ. of California, San Diego, Chungnam National Univ.
16:20 - 16:40
Mo4C-3 A 286-GHz CMOS Amplifier Achieving 56-GHz BW3dB Via fmax-Boosting and Gain-Staggering
ABSTRACT
Dawei Tang, Yu-Chen Xue, Peigen Zhou, Zhe Chen, Jixin Chen, Hao GAO, Wei Hong
Southeast Univ., Southeast Univ., Southeast Univ., Southeast Univ., Southeast Univ., Eindhoven Univ. of Technology, Southeast Univ.
16:40 - 17:00
Mo4C-4 A D-band Bi-directional Amplifier Utilizing Lossy U-boosting Network
ABSTRACT
Sunghwan Park, Yudai Yamazaki, Chenxin Liu, Chun Wang, Hiroyuki Sakai, Kazuaki Kunihiro, Kenichi Okada
Institute of Science Tokyo, Institute of Science Tokyo, Institute of Science Tokyo, Institute of Science Tokyo, Institute of Science Tokyo, Tokyo Institute of Technology, Institute of Science Tokyo