Mo4C: Sub-THz Power Amplifiers and Bidirectional Amplifiers

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Mon 8 Jun | 15:40 - 17:20
Room: 257AB
Mohamed Elkhouly
Broadcom
Wooram Lee
Penn State
This session will present new design techniques for sub-THz power amplifiers to achieve high output power, wide bandwidth, and compact chip area. This session will also present a compact, high-gain sub-THz bidirectional amplifier.
15:40 - 16:00
Mo4C-1 A 187–224-GHz 20-dB-Gain 4.5-dBm-Psat Power Amplifier with Dual-Band Matching Networks and Slotline Combining in 40-nm CMOS
ABSTRACT
Cheng-Xuan Tsai, Chun-Hsing Li
National Taiwan Univ.
16:00 - 16:20
Mo4C-2 A Compact 125–150-GHz Power Amplifier in 90-nm SiGe 9HP+ BiCMOS with 34-dB Gain for Phased-Array Transmitters
ABSTRACT
Joon-Hyung Kim, Jae-Hyeok Song, Min-Seok Baek, Jong-Seong Park, Gabriel M. Rebeiz, Choul-Young Kim
Chungnam National University, Univ. of California, San Diego
16:20 - 16:40
Mo4C-3 A 286-GHz CMOS Amplifier Achieving 56-GHz BW3dB Via fmax-Boosting and Gain-Staggering
ABSTRACT
Dawei Tang, Yu-Chen Xue, Peigen Zhou, Zhe Chen, Jixin Chen, Hao Gao, Wei Hong
Southeast Univ., Purple Mountain Laboratories
16:40 - 17:00
Mo4C-4 A D-Band Bidirectional Amplifier Utilizing Lossy U-Boosting Network
ABSTRACT
Sunghwan Park, Yudai Yamazaki, Chenxin Liu, Chun Wang, Hiroyuki Sakai, Kazuaki Kunihiro, Kenichi Okada
Science Tokyo