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Tue 9 Jun | 08:00 - 09:40
255
Next-generation optical interconnects must achieve 200G/400G data rates per lane to support future intra-datacenter requirements. This session showcases high-performance optical transmitter and receiver building blocks engineered to meet these scaling demands. Presentations will cover a diverse range of cutting-edge material platforms and processes, including SiGe, CMOS, Thin-Film Lithium Niobate (TFLN), and InP, highlighting their roles in achieving the necessary power efficiency and signal integrity for the next era of data centers.
08:00 - 08:20
Tu1J-1 A 460 Gb/s PAM-4 Linear Distributed Driver with 105 GHz BW for TFLN Modulators in 130nm SiGe BiCMOS
08:20 - 08:40
Tu1J-2 A 200-Gb/s Low-Noise TIA in 28-nm CMOS
08:40 - 09:00
Tu1J-3 A 4×212 Gbps 3.34pJ/bit Electronic-Photonic Co-Designed Transmitter Chipset in 0.18-um SiGe BiCMOS and 90nm Silicon Photonics
09:00 - 09:20
Tu1J-4 A 55-GHz Bandwidth PAM-4 InP DHBT Photoreceiver Based on PD–TIA Co-Design for >112-GBd Optical Transceivers