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Tue 9 Jun | 13:30 - 15:10
Room: 257AB
This session explores advanced integration technologies for Power Amplifiers (PAs) and Low-Noise Amplifiers (LNAs), pushing the boundaries of performance and size across a wide range of frequencies. The session begins with a 3D-RDL integration approach for a LDMOS Doherty PA module operating in the 3.4–3.8GHz band, demonstrating innovative packaging solutions for enhanced compactness. Next, the first GaN-on-Silicon (GaN/Si) Doherty PA operating above 7GHz is presented, showcasing the potential of GaN/Si technology for 5G FR3 applications. The session then transitions to mm-wave applications, featuring a 60GHz LNA and PA designed and fabricated in an advanced Gate-All-Around (GAA) CMOS process, demonstrating the capabilities of advanced CMOS logic technologies for mm-wave. Finally, the session ends with a 300GHz PA design in a 130nm SiGe technology, pushing the envelope of SiGe-based solutions for sub-THz applications.
13:30 - 13:50
Tu3C-1 3D-RDL and Bondwire Technology Comparison for Implementation of a 10W Broadband Three-Way LDMOS Doherty Power Amplifier
13:50 - 14:10
Tu3C-2 A 10-W 7-GHz GaN-on-Si Doherty Power Amplifier with Hybrid MMIC-Module Integration for 6G Base-Station Applications
14:10 - 14:30
Tu3C-3 A 60GHz LNA and PA Achieving 5dB NF and 35.6% Peak PAE in a Gate-All-Around (GAA) CMOS Process with Backside Power Delivery
14:30 - 14:50
Tu3C-4 A Wideband and Linear 300GHz Power Amplifier in 130nm SiGe BiCMOS Technology