Tu3C: Advanced Integration Technologies for Power Amplifier and Low-Noise Amplifier Design

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Tue 9 Jun | 13:30 - 15:10
257AB
Alexandre Giry
CEA-LETI
Gernot Hueber
United Micro Technology
This session explores advanced integration technologies for power amplifiers (PAs) and low-noise amplifiers (LNAs), pushing the boundaries of performance and size across a wide range of frequencies. The session begins with a 3D-RDL integration approach for a LDMOS Doherty PA module operating in the 3.4–3.8 GHz band, demonstrating innovative packaging solutions for enhanced compactness. Next, the first GaN-on-Silicon (GaN/Si) Doherty PA operating above 7 GHz is presented, showcasing the potential of GaN/Si technology for 5G FR3 applications. The session then transitions to mmWave applications, featuring a 60 GHz LNA and PA designed and fabricated in an advanced gate-all-around (GAA) CMOS process, demonstrating the capabilities of advanced CMOS logic technologies for mmWave. Finally, the session ends with a 300 GHz PA design in a 130 nm SiGe technology, pushing the envelope of SiGe-based solutions for sub-THz applications.
13:30 - 13:50
Tu3C-1 3D-RDL and Bondwire Technology Comparison for Implementation of a 10W Broadband Three-way LDMOS Doherty Power Amplifier
ABSTRACT
Mohadig Rousstia, Ayad Ghannam, Mariano Ercoli, Radjindrepersad Gajadharsing
Ampleon, 3DiS Technologies, Ampleon, Ampleon
13:50 - 14:10
Tu3C-2 A 10-W 7-GHz GaN-on-Si Doherty Power Amplifier with Hybrid MMIC-Module Integration for 6G FR3 Base-Station Applications
ABSTRACT
Kyung Pil Jung, Seunghoon Jee, Seung Hun Kim, Sungjae Oh, Jungsik Kim, Dongki Kim, Seong-Kyun Kim
Samsung Research, Korea, Samsung Research, Korea, Samsung Research, Korea, Samsung Research, Korea, Samsung Research, Korea, Samsung Research, Korea, Samsung Research, Korea
14:10 - 14:30
Tu3C-3 A 60GHz LNA and PA Achieving 5dB NF and 35.6% Peak PAE in a Gate-All-Around (GAA) CMOS Process with Backside Power Delivery
ABSTRACT
Steven CALLENDER, Ibukun Momson, Awani Khodkumbhe, Ali Niknejad, Said Rami, Stefano Pellerano
Intel Corp., Intel Corp., Univ. of California, Berkeley, Univ. of California, Berkeley, Intel Corp., Intel Corp.
14:30 - 14:50
Tu3C-4 A Wideband and Linear 300 GHz Power Amplifier in 130 nm SiGe BiCMOS Technology
ABSTRACT
Enrico Jimenez Tuero, Seyyid Dilek, Andrea Malignaggi, Corrado Carta
IHP Microelectronics, IHP Microelectronics, IHP Microelectronics, IHP GmbH