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Tue 9 Jun | 13:30 - 15:10
151AB
This session highlights advanced millimeter-wave oscillators, upconverters, frequency multipliers, and mixers implemented in CMOS, SiGe, and GaN technologies. The presented integrated circuits achieve broadband operation, low phase noise, high output power, and high conversion gain over frequencies spanning 30 GHz to 300 GHz.
13:30 - 13:50
Tu3H-1 A 38-41 GHz 27-dBm Direct-Conversion I/Q Transmitter in 0.12-μm GaN Technology with Enhanced Linearity for 4096-QAM Modulation
13:50 - 14:10
Tu3H-2 A −9.3-dBm Output Power 290-GHz Push–Push Mixer in 28-nm CMOS for Sub-THz Transmitter Applications
14:10 - 14:30
Tu3H-3 Digitally Reconfigurable D-Band ×7/×9 Frequency Multiplier Employing an Up/Down-Conversion Single-Sideband Mixer in SiGe
14:30 - 14:50
Tu3H-4 A V-Band GaN Oscillator Using an On-Chip High-Q SIW Resonator With an FoM Up to -181.2 dBc/Hz
14:50 - 15:10
Tu3H-5 A 10.3-to-11.4GHz 191.2dB FoMA Impedance Boosting Series-Resonance Oscillator Using Inverse-Coupling Transformer and Current-Compressed Transistor Achieving −144.3dBc/Hz PN at 10MHz