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Tue 9 Jun | 13:30 - 15:10
Room 151AB
Chinchun Meng
NYCU
Damla Dimlioglu
Cornell Univ.
This session highlights advanced mm-wave oscillators, upconverters, frequency multipliers, and mixers implemented in CMOS, SiGe, and GaN technologies. The presented integrated circuits achieve broadband operation, low phase noise, high output power, and high conversion gain over frequencies spanning 30GHz to 300GHz.
13:30 - 13:50
Tu3H-1 A 38-41 GHz 27-dBm Direct-Conversion I/Q Transmitter in 0.12-μm GaN Technology with Enhanced Linearity for 4096-QAM Modulation
Cheng-Yang Lee, Wei-Chih Chang, Po-Yuan Chen, Hong-Yeh Chang
National Central Univ.
13:50 - 14:10
Tu3H-2 A -9.3-dBm Output Power 290-GHz Push-Push Mixer in 28-nm CMOS for Sub-THz Transmitter Applications
Ting-Yu Chang, Tian-Wei Huang, Kai-Jie Chuang, Jeng-Han Tsai, Yi-Wen Wang
National Taiwan Univ., National Taiwan Normal Univ.
14:10 - 14:30
Tu3H-3 Digitally Reconfigurable D-Band ×7/×9 Frequency Multiplier Employing an Up/Down-Conversion Single-Sideband Mixer in SiGe
Stephan Hauptmeier, Tobias T. Braun, Justin Romstadt, Nils Pohl
Ruhr-Universität Bochum
14:30 - 14:50
Tu3H-4 A V-Band GaN Oscillator Using an On-Chip High-Q SIW Resonator with an FoM up to -181.2dBc/Hz
Hao-Luen Chang, Li-Kai Chang, Yin-Cheng Chang, Da-Chiang Chang, Shawn S.H. Hsu
National Tsing Hua Univ., NIAR-TSRI
14:50 - 15:10
Tu3H-5 A 10.3-to-11.4GHz 191.2dB FoMA Impedance Boosting Series-Resonance Oscillator Using Inverse-Coupling Transformer and Current-Compressed Transistor Achieving -144.3dBc/Hz PN at 10MHz
Meifang Liu, Wen Chen, Xun Luo
UESTC