We1F: High-Power Doherty Power Amplifiers

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Wed 10 Jun | 08:00 - 09:40
153AB
Yulong Zhao
Skyworks Solutions, Inc.
Anna Piacibello
Politecnico di Torino
This session introduces advanced Doherty power amplifiers with power level >10 W over FR1 and FR3.
08:00 - 08:20
We1F-1 KEYNOTE: Broadband Energy-Efficient Integrated PA MMIC for 5G/6G Applications
Wenhua Chen
08:20 - 08:40
We1F-2 A 6.4-7.2 GHz Gain-Enhanced GaN MMIC Doherty Power Amplifier Based on Adaptive Power Divider for 6G Applications
ABSTRACT
Shun Wan, Yudi Yang, Guansheng Lv, Wenhua Chen, Zhenghe Feng
Tsinghua Univ., Tsinghua Univ., Beijing Institute of Technology, Tsinghua Univ., Tsinghua Univ.
08:40 - 09:00
We1F-3 Deep Learning-Driven Inverse Design of Doherty Power Amplifiers Using Pixelated Combiners and Dual-State Impedance Synthesis
ABSTRACT
Han Zhou, Haojie Chang, David Widén, Christian Fager
Chalmers Univ. of Technology, Chalmers Univ. of Technology, Chalmers Univ. of Technology, Chalmers Univ. of Technology
09:00 - 09:20
We1F-4 A 140 W Integrated GaN Doherty Power Amplifier Module Based on a Triple-tuned Design Method for 5G Massive-MIMO Base-Stations
ABSTRACT
Yifei Chen, Seungwon Park, Jooseok Lee, Seungjae Beak, Taewan Kim, Sehyug Jeon, Heedo Kang, Ansang Ryu, Sung-Gi Yang
Samsung Electronics, Samsung Electronics, Samsung Electronics, Samsung Electronics, Samsung Electronics, Samsung Electronics, Samsung Electronics, Samsung Electronics, Samsung Electronics
09:20 - 09:40
We1F-5 A Broadband Three-Way Continuous-Mode Doherty Power Amplifier with Dual-Resonant Harmonic Injection Network
ABSTRACT
Ruxuan Zhao, Xinyu Zhou, Wing Shing Chan, Shichang Chen
Hong Kong Polytechnic Univ., Hong Kong Polytechnic Univ., City Univ. of Hong Kong, Hangzhou Dianzi University