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High-power radio design has utilized PIN diode technology to realize RF switch functions in RF front-ends. 5G base station, Tactical/Mil Comm Radios are required to cover many bands. The majority of 5...
Intel developed industry’s first 300mm GaN-on-Silicon process technology on high-resistivity silicon wafers in a leading advanced CMOS fab. We enhance the performance and density of GaN MOSHEMT transi...
Expected requirements for wireless applications in the FR3 band are PA power levels calling for Vdd much below the 50V typically used at lower frequencies removing GaN-SiC’s major thermal benefit. At ...
GaN has emerged as a transformative technology to address the demanding requirements of modern wireless communication systems. Its superior power and performance have made it the choice for infrastruc...
The rapid development of GaN technology has transformed the RF industry, enabling high-frequency, high-power, and high-efficiency operations for RF systems across a range of market segments. Despite t...
This tutorial on Method of Moments (MoM) will present: general solution of linear operator equations; Frequency and time domain formulations; surface and volume discretizations; boundary integral equa...
This lecture focuses on an introduction to the Finite Element Method (FEM) tailored for complex electromagnetic applications. We will explore numerical techniques for solving Maxwell’s equations in th...
The Finite-Difference Time-Domain (FDTD) technique is a popular method of electromagnetic field computations, due to its simplicity and versatility, which is implemented in numerous software packages....
For problems such as the prediction of received signal strength in a large mall, due to a Wi-Fi network, full-wave analysis techniques require excessive computational resources, along with high-resolu...