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In this talk I will discuss my group’s progress toward a new class of classical microwave frequency phononic devices created by heterogeneously integrating semiconductors and piezoelectric materials. ...
Quantum computers have demonstrated potential to solve problems that are intractable for classical computers. Although current state-of-the-art quantum processors have shown promising results, they ha...
Acoustic waves are well-suited for a variety of signal processing applications including RF filtering and optical modulation. Advances in material and fabrication capabilities have enabled the demonst...
Thermal dissipation and heating limit the performance of many state-of-the-art electronic, MEMS, and acoustic devices and integrated circuits. Full-field thermoreflectance imaging measures the dynamic...
The US Army’s Ultra-Wide Bandgap (UWBG) RF Electronics Center was established to facilitate research aimed at uncovering fundamental knowledge needed to develop next generation RF electronics based on...
AlN emerged as an attractive future semiconductor for RF- and power transistors. The ultra-wide band gap and the high thermal conductivity makes it to stand out amongst the UWBG materials. At the same...
GaN HEMTs are highly attractive microwave sources due to their superior output power and efficiency compared to other solid-state power amplifiers. Researchers are actively exploring methods to achiev...
AlN possesses a number of promising properties for RF devices. After all, ceramic AlN has been widely used as MMIC substrate for decades for its high thermal conductivity (>170W/mK even in the ...
This presentation will discuss recent advances in high-performance ultra-wide bandgap AlGaN-based transistors. The large breakdown field of AlGaN makes it a promising material for future RF and mm-wav...