This paper presents a 9.5–40 GHz high-power, ultra-broadband linear power amplifier (PA) in 65-nm bulk CMOS technology for 5G FR2 and future 6G applications. To achieve such broadband high-power perf...
SATCOM ground terminals are rapidly scaling in size and complexity to support LEO and multi-orbit systems, driving phased arrays toward hundreds or thousands of radiating elements. As RFIC count and a...
This workshop presentation will discuss recent advances in digital additive multi-material manufacturing technologies and their potential for the realization of truly monolithically-integrated 3D RF c...
This section covers frequency and time domain sweep searching including RBW, VBW and dynamic range criteria for accurate measurements. Included will be an overview of the independent and integrated f...
This paper presents a 200-Gb/s low-noise transimpedance amplifier (TIA) implemented in standard 28-nm CMOS technology, addressing the escalating bandwidth demands of artificial intelligence data cente...