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Gallium oxide (Ga₂O₃) has unique and attractive features represented by physical properties based on the bandgap energy of 4.5eV and availability of large-size, high-quality wafers produced from melt-...
Diamond has a number of semiconductor properties, such as large band gap, high critical electric field, high thermal conductivity, high carrier mobilities for both electrons and holes, and others, whi...
Despite increasing the operating voltage and current density of ultra-wide bandgap devices, excessive Joule heating significantly limits UWBG devices from reaching their theoretically predicted perfor...
Gallium Nitride (GaN) HEMT technology is pivotal for power and RF applications but suffers from significant Joule heating, affecting performance and reliability. We have developed a low-temperature (~...
Noise sources are a key technology for the characterization and calibration of THz instrumentation ranging from amplifiers to radiometers. This talk will describe the development of noise sources, bot...
This talk will discuss and demonstrate a recent technique developed to characterize the noise parameters of microwave active devices by varying their size. The approach is very innovative as it provid...
This presentation discusses cryogenic characterization techniques for the development of cryogenically cooled MMIC LNAs. On-chip testing at cryogenic temperatures speeds up chip developments and quali...
Demand for compute continues to soar insatiably with successive waves of mobile-, ubiquitous-, and now AI-based workloads. The sheer magnitude of compute demand is raising serious concerns about the e...
Instrumentation projects in radio astronomy have reached production scales of hundreds of units, with a further increase expected in the near future. In particular this applies to the performance crit...