We report a novel surface acoustic wave topology that realizes arbitrarily configurable group delay profiles over wide passbands using skewed chirped acoustic delay lines. In this geometry, frequency ...
A 3D printed wideband tunable RF signal processing true time delay (TTD) circuit is proposed from a wideband RF Hilbert transformer and tunable transmission line. The RF Hilbert transformer rotates th...
A fully-integrated, compact and low-loss 4-bit passive phase shifter (PS) employing Phase Change Material (PCM) switches is presented for Ka-band phased-array receivers. The design leverages the non-v...
This paper presents a D-band 5-bit passive switch-type phase shifter (PS) that combines a compact switch-self-phase-shifting (SSPS) unit with a dual high-pass phase-shifting unit. The SSPS unit innova...
This paper presents a compact passive mixed-type true-time delay (TTD) circuit for wideband phased-array systems. The proposed circuit cascades a reflective TTD and two APN-based TTDs. In the reflecti...
This paper proposes a transformer-based ultra-wideband switchable 180° phase shifter, featuring consistent trisection filtering responses in both states. All adjacent resonators are coupled through el...
This paper presents a 38-41 GHz direct-conversion I/Q transmitter in 0.12-μm GaN technology that achieves high linearity and low error-vector-magnitude (EVM) for high-order 4096-QAM modulation. The pr...
A 290-GHz push-push square mixer implemented in 28-nm CMOS for sub-terahertz wireless transmitters is presented. Achieving high output power near 300 GHz in CMOS is challenging because mixers often se...
In this paper, we present the concept, design, and measurement results of a digitally reconfigurable D-band (110–170 GHz) frequency multiplier. By employing a digitally controlled phase inverter in on...
Tu3H-4: A V-Band GaN Oscillator Using an On-Chip High-Q SIW Resonator with an FoM up to -181.2dBc/Hz
This paper presents an MMIC V-band oscillator employing an on-chip substrate integrated waveguide (SIW) resonator in 0.12-µm GaN HEMT technology. The proposed design adopts an inductor-terminated comm...