This talk presents recent advances for the generation of mm-wave power using scaled Gallium Nitride HEMT MMICs for 110–170GHz and 140–220GHz in G-band, with gate lengths of 70nm and below. The progres...
High-resolution radar technology above 110GHz offers unique opportunities for precision sensing in both industrial and scientific applications. This talk presents recent advances in the development of...
This talk presents our efforts in the realization of two-dimensionally-scalable 110–170GHz integrated circuits in Silicon-Germanium Bipolar Complementary Metal-Oxide-Semiconductor (SiGe BiCMOS) techno...
This talk will discuss recent advances in high-power and high-efficiency power amplifiers for Indium Phosphide (InP) Heterojunction Bipolar Transistors (HBTs) above 200GHz. We will review recently pub...
It is remarkable that semiconductor technologies now provide power gain at frequencies well beyond 500GHz, a capability that RFIC designers have come to regard as routine. Recent advances in SiGe BiCM...
In this talk, highly efficient and dense 3DHI G-band (220GHz) phased arrays developed under the ELGAR program will be presented. Under ELGAR, HRL’s GaN MMICs produce 1–3W/cm² power density, while 3D i...
As the demand for ultra-high data-rates surpassing 100Gb/s grows, future wireless systems over the next decade will require innovative solutions. Frequency bands above 200GHz are expected to be utiliz...
In this talk, we will present G-band power amplifiers in a SiGe technology with an fmax of 650GHz. We will present design techniques to boost the PAE of single PAs as much as possible. Further, the PA...
This talk provides a comprehensive overview of ASICs across the entire G-band, developed by the Circuit Design Department of IHP for a broad range of applications, such as high-data-rate wireless comm...
An interactive Q&A session with all speakers and the audience to discuss the challenges and next steps in harnessing the G-band spectrum toward high-performance communication and sensing techn...