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WME-5: AI Optimization of High-Power Microwave Filters
Accurate modeling and optimization of high-power microwave filters necessitates the use of multiphysics-based approaches, including electromagnetic, thermal and mechanical stress coupled analysis. How...
WME-6: RF Breakdown Analysis and Thermal Management Within CST Studio Suite Environment
Different applications require the use of high-power levels. Examples include base stations, satellite communication systems, electronics, etc. CST Studio Suite environment provides tools and solvers ...
WME-7: Advanced Modeling and Synthesis of Consolidated Additively Manufactured Waveguide Filter Assemblies
High-power, lightweight RF passive components are crucial for satellite communications, managing high powers across broad frequencies. Additive manufacturing (AM), particularly powder-bed fusion, enab...
WME-8: Innovative Waveguide and 3D Tunable Filters
High performance tunable filters are needed in wireless communication systems to facilitate efficient utilization of the available frequency spectrum. They can be employed to replace large filter bank...
WMG-1: GaN-on-SiC vs. GaN-on-Si: Emerging Opportunities and Market Dynamics in the RF GaN Industry
The RF GaN device market is projected to reach billion by 2029, primarily driven by defense, SATCOM, and telecom infrastructure applications. GaN-on-SiC currently dominates the market, while GaN-on-Si...
WMG-2: Challenges and Solutions of Epitaxy by MOCVD for RF GaN/Si
This presentation will introduce the state-of-the-art MOCVD equipment used for the growth of GaN on silicon. The talk will cover how specific challenges related to RF applications (substrate loss,...)...
WMG-3: Deep Traps in GaN-on-Silicon HEMT Devices and their Effects on RF Performance
5G has been a transformative power in consumer communications. Its incremental introduction has resulted in high complexity, resulting in high development costs and power consumption. FR3 is poised to...
WMG-4: Challenges and Opportunities of GaN-on-Si from a Foundry Perspective
Introduction of an advanced high volume 200mm GaN-on-Silicon technology for RF Cellular Infrastructure Power Amplifier applications. Review of the challenges and opportunities of bringing a GaN-on-Si ...
WMG-5: GaN-Si-Based RF Switch to Improve SWaP and Reduce Complexity Out of High-Power Radio Design
High-power radio design has utilized PIN diode technology to realize RF switch functions in RF front-ends. 5G base station, Tactical/Mil Comm Radios are required to cover many bands. The majority of 5...
WMG-6: Innovations in GaN-on-Silicon Technology for High Performance Power and RF Applications
Intel developed industry’s first 300mm GaN-on-Silicon process technology on high-resistivity silicon wafers in a leading advanced CMOS fab. We enhance the performance and density of GaN MOSHEMT transi...