WMG: GaN/Si: an Enabler for FR3 Applications?

Presentation Abstract
GaN HEMT technology plays a crucial role in wireless telecom infrastructure for 3G, 4G, and 5G standards. Thanks to its excellent transport properties, GaN HEMTs support highly efficient, high-power operation at frequencies up to several tens of GHz. This makes them particularly well-suited for the FR3 spectrum (7–24GHz), which has emerged as a key focus for 6G communications. Historically, GaN has been grown hetero-epitaxially on high-resistivity SiC substrates, known for their superior performance but also high cost. Recently, driven by the success of GaN in power switching applications, GaN-on-Si is gaining momentum in RF and microwave communication. While GaN-on-Si introduces some trade-offs — such as lower thermal conductivity and parasitic effects like conductive channels at the Si/AlN interface — it presents immense potential due to its economic advantages. Silicon substrates are not only more affordable, but can also be produced at up to 300mm in diameter and processed in high-volume Si foundries. Additionally, GaN-on-Si offers technical benefits like scalability and easier integration with Si CMOS technology. In this workshop, we will explore GaN-on-Si HEMT technology in the FR3 spectrum from multiple angles. Topics include material science, the foundry perspective, device scaling, reliability, co-integration with existing technologies, and its application in both telecom infrastructure and user devices. Competitive benchmarking and future market prospects will also be discussed. This workshop features presentations by experts from both industry and academia, providing a comprehensive overview of the state of GaN-on-Si technology. Interactive sessions, including live polling, Q&A discussions, and a panel, will allow participants to engage with speakers and fellow attendees.