WMN: Three-Dimensional Passive Components and Devices for High-Density Integration and Functionality

Presentation Abstract
The evolution of 3D passive components and devices has become increasingly important in advancing high-density integration and multifunctionality in microwave and mm-wave systems. Traditional planar technologies, such as 2D layouts on PCBs, often face limitations in scalability, integration density, and performance at higher frequencies due to increased parasitic effects and limited space for component placement. In contrast, 3D integration techniques leverage vertical stacking and embedding of components, significantly improving the overall performance, reducing form factors, and enhancing the functionality of passive circuits. 3D integration utilizes advanced materials and processes, including GaAs, CMOS, GaN, and MEMS, which offer distinct advantages over conventional approaches: (•1) GaAs-based Integrated Passive Device (IPD) Technology: GaAs IPD technology allows for the development of highly integrated, multifunctional filtering circuits. These circuits combine lumped and distributed elements, leading to compact designs that exhibit low loss and high-quality factors. (•2) MEMS-based Bulk Acoustic Wave (BAW) Filters: MEMS technologies enable the fabrication of high-performance BAW filters that offer superior selectivity and low insertion loss at microwave frequencies. The miniaturization and integration capabilities of MEMS devices allow these filters to be directly integrated into RF front-end modules, enhancing the performance of wireless communication systems. (•3) GaN-based Filtering Switches: GaN materials are known for their high breakdown voltage and power-handling capabilities, making them ideal for high-frequency, high-power applications. GaN-based filtering switches integrate filtering and switching functions, reducing the need for separate components and thereby minimizing signal loss and improving system efficiency. Addressing High-Frequency Challenges with 3D Technologies — high-frequency applications, particularly in the mm-wave range, pose unique challenges such as increased parasitic effects, signal loss, and thermal management issues. 3D integration addresses these challenges by: (•1) Reducing Size and Parasitics: The vertical stacking of components and the integration of passives directly onto semiconductor substrates minimize interconnect lengths and associated parasitics. (•2) Performance Optimization: By leveraging advanced electromagnetic modeling techniques and novel manufacturing processes like micro-dispensing and aerosol jetting, 3D technologies enable the design of complex metasurface architectures and efficient RF packaging solutions. These processes allow for the precise control of material properties and geometric configurations, leading to optimized performance in terms of bandwidth, insertion loss, and isolation. Heterogeneous Integration and Packaging Innovations — the integration of microelectronics and heterogeneous 2.5D/3D packaging techniques further supports the development of high-density, energy-efficient designs essential for emerging 5G and 6G systems. Advanced packaging methods, such as die-embedded glass substrates, provide innovative solutions for integrating high-frequency components. For example, a die-embedded glass packaging effectively mitigates electrical losses and manages thermal dissipation. Additionally, the ability to stack multiple layers of passive and active components enables the creation of highly compact modules. In this workshop, we address the transition to 3D high-integration technologies which marks a significant advance in the microwave and mm-wave field, offering a pathway to more compact, efficient, and multifunctional electronic systems. By overcoming the limitations of traditional planar approaches, 3D integration is set to revolutionize the design and implementation of high-frequency electronic systems, driving innovation and expanding the possibilities for future technologies.