Tu3A: Recent advances in GaN technology

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Tue 9 Jun | 13:30 - 15:10
Room 252AB
Oleh Krutko
IMEC
Harshpreet Bakshi
Texas Instruments, Inc.
GaN technologies continue to attract strong interest for applications demanding high power density. This session highlights recent advances in GaN device technologies spanning recess-free, near enhancement-mode high-performance InAlGaN/GaN HEMTs; a scalable GaN-on-Si process with high power density and linearity for FR3; heterogeneous integration of GaN power amplifiers using diamond interposers; and nonlinear electro‑thermal models enabling accurate MMIC HPA prediction up to V-band.
13:30 - 13:50
Tu3A-1 High-Performance Near-Enhancement-Mode InAlGaN/GaN HEMTs on Silicon with High fT/fMAX of 71.5/173.1 GHz for Millimeter-Wave Applications
ABSTRACT
Hsuan-Yao Huang, Po-Wei Chen, You-Chen Weng, You-Ting Lin, Fitriyadi Fitriyadi, Jeng-Chyang Sun, Chen Zhang, Edward Yi Chang
National Yang Ming Chiao Tung Univ., Infinity Communication Technology Inc., Taiwan
13:50 - 14:10
Tu3A-2 GH10-10 Nonlinear Thermal Model Capability & 3W SatCom HPA
ABSTRACT
Samira Bouzid-Driad, Frederic DRILLET, Christophe Chang, Manfred Madel, Kimon Vivien, Laurent Brunel, Romain Pecheux, Herve Blanck, Valeria Di Giacomo-Brunel
United Monolithic Semiconductors, UMS (United Monolithic Semiconductors)
14:10 - 14:30
Tu3A-3 Fully Al-based 0.25 µm 20 V GaN-on-Si Process with 3 W/mm for FR3
ABSTRACT
Hsien Shun Wu, Yuan Gao, Qingyun Xie, Yi Heng Leong, Wee Leng Ong, Lakshmi Kanta Bera, Navab Singh, Geok Ing Ng
Agency for Science, Technology and Research (A*STA, Agency for Science, Technology and Research (A*STAR), Nanyang Technological Univ.
14:30 - 14:50
Tu3A-4 A 4 W Heterogeneous Power Amplifier with GaN-on-Si Dielets in Single-Crystal Diamond Interposer for 6G FR3 Applications
ABSTRACT
Pradyot Yadav, Xingchen Li, Danish Baig, Ruonan Han, Muhannad Bakir, Madhavan Swaminathan, Tomás Palacios
Massachusetts Institute of Technology, Georgia Institute of Technology, Pennsylvania State Univ.