Tu4C: Advances in Devices and Circuits for System Integration

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Tue 9 Jun | 15:40 - 17:20
Room: 257AB
Matilda Livadaru
RTX
Florian Voineau
STMicroelectronics
This session presents recent advances in devices and circuits for system integration. Notable component advances include: a low-loss X-Band Switched-Capacitor Delay Element and signal repeater implemented in 45nm SOI CMOS technology; a dual-mode circular cavity filter; a high-performance RF-SOI switch fabricated on 130nm 200mm technology platform that incorporates a 65nm device; and a multi-channel transceiver featuring Built-in-Self-Test functionality enabled by integrated directional couplers. These papers represent significant progress in the field, driving enhanced system integration with optimized performance.
15:40 - 16:00
Tu4C-1 Accurate, High Coverage On-Chip Built-In Self-Test Adopting Precision-Enhanced Power Detection and Multipath Loopback for mmWave Radar IC Measurements
ABSTRACT
Doyoon Kim, Kyunghwan Kim, Geonho Park, Goeun Baek, Byeong-Taek Moon, Hyun-Chul Park, Chan-Hong Park
Samsung
16:00 - 16:20
Tu4C-2 Dual-Mode Circular Cavity Filters via Azimuthal Wave Propagation
ABSTRACT
Mustafa Bakr, Smain Amari, Uwe Rosenberg
Univ. of Oxford, Mician Global Engineering
16:20 - 16:40
Tu4C-3 Sub-60fs RFSOI Switch Performances in Advanced 200mm 130/65nm Hybrid Technology
ABSTRACT
Robin Bousmaha-Jouve, Julien Dura, Julien Amouroux, Pascal Masson, Remy Vauche, Frederic Gianesello, Wenceslas Rahajandraibe, Julien Babic, Romain Laire, Fayrouz Haddad, Pascal Fornara, Franck Julien, Clement Charbuillet, Alain Fleury
STMicroelectronics, Polytech’Lab (EA 7498), IM2NP (UMR 7334)
16:40 - 17:00
Tu4C-4 A 9–11GHz Multistage Switched-Capacitor Delay Element and Signal Repeater Achieving 4.6–71.4ns Delay and 40dB Gain
ABSTRACT
Travis Forbes, Benjamin Magstadt, Robert Costanzo, Jesse Moody
Sandia National Laboratories